Abstract: Described herein are technologies to facilitate device fabrication, especially those that involve spin-on coatings of a substrate (e.g., wafer). More particularly, technologies described herein facilitate the planarization (i.e., flatness) of spin-on coatings during the device fabrication to form a uniformly planar film or layer on the substrate. This abstract itself is not intended to limit the scope of this patent. The scope of the present invention is pointed out in the appending claims.

Abstract: Described herein are technologies to facilitate device fabrication, especially those that involve spin-on coatings of a substrate (e.g., wafer). More particularly, technologies described herein facilitate the planarization (i.e., flatness) of spin-on coatings during the device fabrication to form a uniformly planar film or layer on the substrate. This abstract itself is not intended to limit the scope of this patent. The scope of the present invention is pointed out in the appending claims.

Abstract: Methods of forming integrated circuit devices include forming first and second electrically conductive lines at side-by-side locations on an integrated circuit substrate. Steps are performed to selectively etch each of the first and second electrically conductive lines into a respective pair of interconnects having facing ends that are separated from each other. This selective etching step is performed using a photolithography mask having a modified-rectangular mask pattern thereon, which is configured to define a shape of the facing ends of each of the pair of interconnects.

Abstract: Methods of forming integrated circuit devices include forming first and second electrically conductive lines at side-by-side locations on an integrated circuit substrate. Steps are performed to selectively etch each of the first and second electrically conductive lines into a respective pair of interconnects having facing ends that are separated from each other. This selective etching step is performed using a photolithography mask having a modified-rectangular mask pattern thereon, which is configured to define a shape of the facing ends of each of the pair of interconnects.

Abstract: A solution for performing an optical proximity correction (OPC) process on a layout by incorporating a critical dimension (CD) correction is provided. A method may include separating the layout into a first portion and a second portion corresponding to the two exposures; creating a model for calculating a CD correction for a site on the first portion, the model corresponding to a topography change on the site due to the double exposures; implementing an OPC iteration for the fragment based on the model to generate an OPC solution for the first portion; and combining the OPC solution for the first portion with an OPC solution for the second portion to generate an OPC solution for the layout to generate a mask for fabricating a structure using the layout.

Abstract: The present invention relates to planarization materials and methods of using the same for substrate planarization in photolithography. A planarization layer of a planarization composition is formed on a substrate. The planarization composition contains at least one aromatic monomer and at least one non-aromatic monomer. A substantially flat surface is brought into contact with the planarization layer. The planarization layer is cured by exposing to a first radiation or by baking. The substantially flat surface is then removed. A photoresist layer is formed on the planarization layer. The photoresist layer is exposed to a second radiation followed by development to form a relief image in the photoresist layer. The relief image is then transferred into the substrate.

Abstract: A solution for performing an optical proximity correction (OPC) process on a layout by incorporating a critical dimension (CD) correction is provided. A method may include separating the layout into a first portion and a second portion corresponding to the two exposures; creating a model for calculating a CD correction for a site on the first portion, the model corresponding to a topography change on the site due to the double exposures; implementing an OPC iteration for the fragment based on the model to generate an OPC solution for the first portion; and combining the OPC solution for the first portion with an OPC solution for the second portion to generate an OPC solution for the layout to generate a mask for fabricating a structure using the layout.

Abstract: The present invention relates to planarization materials and methods of using the same for substrate planarization in photolithography. A planarization layer of a planarization composition is formed on a substrate. The planarization composition contains at least one aromatic monomer and at least one non-aromatic monomer. A substantially flat surface is brought into contact with the planarization layer. The planarization layer is cured by exposing to a first radiation or by baking The substantially flat surface is then removed. A photoresist layer is formed on the planarization layer. The photoresist layer is exposed to a second radiation followed by development to form a relief image in the photoresist layer. The relief image is then transferred into the substrate.

Abstract: A polymeric composite may be used for forming fluid separation membranes. The membranes may be formed from polyimide, polyamide or poly (pyrrolone-imide) materials. Polyamides may be formed by the condensation of a tetraamine, a tetraacid, and a diamine. Polyimides and poly (pyrrolone-imides) may be formed by the cyclization of a polymer precursor. A polymeric composite may include a dithiolene or a mixture of dithiolenes. A polymer matrix incorporating dithiolenes may exhibit an olefin/paraffin solubility selectivity. A solubility selectivity may be between about 1.1 and about 2.0.

Abstract: A polymeric composite may be used for forming fluid separation membranes. The fluid separation membranes may go through a separation selectivity maximum as a function of operating conditions (e.g., temperature and/or pressure). The membranes may be formed from polyamide or poly (pyrrolone-imide). Polyamides may be formed by the condensation of a tetraamine, a tetraacid, and a diamine. Poly (pyrrolone-imides) may be formed by the condensation of a polyamide.

Abstract: A polymeric composite may be used for forming fluid separation membranes. The fluid separation membranes may go through a separation selectivity maximum as a function of operating conditions (e.g., temperature and/or pressure). The membranes may be formed from polyamide or poly (pyrrolone-imide). Polyamides may be formed by the condensation of a tetraamine, a tetraacid, and a diamine. Poly (pyrrolone-imides) may be formed by the condensation of a polyamide.