Patents by Inventor Ryan M. Meyer

Ryan M. Meyer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming an array of elevationally-extending strings of memory cells
    Patent number: 10847538
    Abstract: A method of forming an array of elevationally-extending strings of memory cells comprises forming conductively-doped semiconductor material directly above and electrically coupled to metal material. A stack comprising vertically-alternating insulative tiers and wordline tiers is formed directly above the conductively-doped semiconductor material. Horizontally-elongated trenches are formed through the stack to the conductively-doped semiconductor material. The conductively-doped semiconductor material is oxidized through the trenches to form an oxide therefrom that is directly above the metal material. Transistor channel material is provided to extend elevationally along the alternating tiers. The wordline tiers are provided to comprise control-gate material having terminal ends corresponding to control-gate regions of individual memory cells. Charge-storage material is between the transistor channel material and the control-gate regions.
    Type: Grant
    Filed: February 11, 2019
    Date of Patent: November 24, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Collin Howder, Ryan M. Meyer, Chet E. Carter
  • Methods Of Forming An Array Of Elevationally-Extending Strings Of Memory Cells
    Publication number: 20190198526
    Abstract: A method of forming an array of elevationally-extending strings of memory cells comprises forming conductively-doped semiconductor material directly above and electrically coupled to metal material. A stack comprising vertically-alternating insulative tiers and wordline tiers is formed directly above the conductively-doped semiconductor material. Horizontally-elongated trenches are formed through the stack to the conductively-doped semiconductor material. The conductively-doped semiconductor material is oxidized through the trenches to form an oxide therefrom that is directly above the metal material. Transistor channel material is provided to extend elevationally along the alternating tiers. The wordline tiers are provided to comprise control-gate material having terminal ends corresponding to control-gate regions of individual memory cells. Charge-storage material is between the transistor channel material and the control-gate regions.
    Type: Application
    Filed: February 11, 2019
    Publication date: June 27, 2019
    Applicant: Micron Technology, Inc.
    Inventors: Collin Howder, Ryan M. Meyer, Chet E. Carter
  • Methods of forming an array of elevationally-extending strings of memory cells
    Patent number: 10236301
    Abstract: A method of forming an array of elevationally-extending strings of memory cells comprises forming conductively-doped semiconductor material directly above and electrically coupled to metal material. A stack comprising vertically-alternating insulative tiers and wordline tiers is formed directly above the conductively-doped semiconductor material. Horizontally-elongated trenches are formed through the stack to the conductively-doped semiconductor material. The conductively-doped semiconductor material is oxidized through the trenches to form an oxide therefrom that is directly above the metal material. Transistor channel material is provided to extend elevationally along the alternating tiers. The wordline tiers are provided to comprise control-gate material having terminal ends corresponding to control-gate regions of individual memory cells. Charge-storage material is between the transistor channel material and the control-gate regions.
    Type: Grant
    Filed: February 7, 2018
    Date of Patent: March 19, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Collin Howder, Ryan M. Meyer, Chet E. Carter