Patents by Inventor Ryan Mackiewicz

Ryan Mackiewicz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SELF-ALIGNED CONTACTS
    Publication number: 20140151817
    Abstract: A transistor comprises a substrate, a pair of spacers on the substrate, a gate dielectric layer on the substrate and between the pair of spacers, a gate electrode layer on the gate dielectric layer and between the pair of spacers, an insulating cap layer on the gate electrode layer and between the pair of spacers, and a pair of diffusion regions adjacent to the pair of spacers. The insulating cap layer forms an etch stop structure that is self aligned to the gate and prevents the contact etch from exposing the gate electrode, thereby preventing a short between the gate and contact. The insulator-cap layer enables self-aligned contacts, allowing initial patterning of wider contacts that are more robust to patterning limitations.
    Type: Application
    Filed: February 6, 2014
    Publication date: June 5, 2014
    Inventors: Mark T. Bohr, Tahir Ghani, Nadia M. Rahhai-Orabi, Subhash M. Joshi, Joseph M. Steigerwald, Jason W. Klaus, Jack Hwang, Ryan Mackiewicz
  • SELF-ALIGNED CONTACTS
    Publication number: 20130178033
    Abstract: A transistor comprises a substrate, a pair of spacers on the substrate, a gate dielectric layer on the substrate and between the pair of spacers, a gate electrode layer on the gate dielectric layer and between the pair of spacers, an insulating cap layer on the gate electrode layer and between the pair of spacers, and a pair of diffusion regions adjacent to the pair of spacers. The insulating cap layer forms an etch stop structure that is self aligned to the gate and prevents the contact etch from exposing the gate electrode, thereby preventing a short between the gate and contact. The insulator-cap layer enables self-aligned contacts, allowing initial patterning of wider contacts that are more robust to patterning limitations.
    Type: Application
    Filed: March 5, 2013
    Publication date: July 11, 2013
    Inventors: Mark T. Bohr, Tahir Ghani, Nadia M. Rahhal-Orabi, Subhash M. Joshi, Joseph M Steigerwald, Jason W. Klaus, Jack Hwang, Ryan Mackiewicz
  • Self-aligned contacts
    Patent number: 8436404
    Abstract: A transistor comprises a substrate, a pair of spacers on the substrate, a gate dielectric layer on the substrate and between the pair of spacers, a gate electrode layer on the gate dielectric layer and between the pair of spacers, an insulating cap layer on the gate electrode layer and between the pair of spacers, and a pair of diffusion regions adjacent to the pair of spacers. The insulating cap layer forms an etch stop structure that is self aligned to the gate and prevents the contact etch from exposing the gate electrode, thereby preventing a short between the gate and contact. The insulator-cap layer enables self-aligned contacts, allowing initial patterning of wider contacts that are more robust to patterning limitations.
    Type: Grant
    Filed: December 30, 2009
    Date of Patent: May 7, 2013
    Assignee: Intel Corporation
    Inventors: Mark T. Bohr, Tahir Ghani, Nadia M. Rahhal-Orabi, Subhash M. Joshi, Joseph M. Steigerwald, Jason W. Klaus, Jack Hwang, Ryan Mackiewicz
  • Self-aligned contacts
    Publication number: 20110156107
    Abstract: A transistor comprises a substrate, a pair of spacers on the substrate, a gate dielectric layer on the substrate and between the pair of spacers, a gate electrode layer on the gate dielectric layer and between the pair of spacers, an insulating cap layer on the gate electrode layer and between the pair of spacers, and a pair of diffusion regions adjacent to the pair of spacers. The insulating cap layer forms an etch stop structure that is self aligned to the gate and prevents the contact etch from exposing the gate electrode, thereby preventing a short between the gate and contact. The insulator-cap layer enables self-aligned contacts, allowing initial patterning of wider contacts that are more robust to patterning limitations.
    Type: Application
    Filed: December 30, 2009
    Publication date: June 30, 2011
    Inventors: Mark T. Bohr, Tahir Ghani, Nadia M. Rahhal-Orabi, Subhash M. Joshi, Joseph M. Steigerwald, Jason W. Klaus, Jack Hwang, Ryan Mackiewicz