Abstract: The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.

Abstract: The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.

Abstract: The present disclosure relates to a method for manufacturing a device, where the device includes, in order, a metamorphic contact layer, a first metamorphic junction, a metamorphic tunnel junction, and a second metamorphic junction. To produce the device, the manufacturing includes, in order, a first depositing of a buffer layer onto a substrate, a second depositing of the metamorphic contact layer, a third depositing of the first metamorphic junction, a fourth depositing of the metamorphic tunnel junction, a fifth depositing of the second metamorphic junction, and the removing of the buffer layer and the substrate.

Abstract: Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.

Abstract: The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.

Abstract: The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.

Abstract: The present disclosure relates to a method for manufacturing a device, where the device includes, in order, a metamorphic contact layer, a first metamorphic junction, a metamorphic tunnel junction, and a second metamorphic junction. To produce the device, the manufacturing includes, in order, a first depositing of a buffer layer onto a substrate, a second depositing of the metamorphic contact layer, a third depositing of the first metamorphic junction, a fourth depositing of the metamorphic tunnel junction, a fifth depositing of the second metamorphic junction, and the removing of the buffer layer and the substrate.

Abstract: Distributed Bragg reflectors are incorporated into the compositionally graded buffers of metamorphic solar cells, adding functionality to the buffer without adding cost. The reflection aids in collection in subcells that are optically thin due to low diffusion length, high bulk recombination, radiation hardness, partially-absorbing quantum structures, or simply for cost savings. Performance enhancements are demonstrated in GaAs subcells with QWs, which is beneficial when GaAs is not the ideal bandgap.

Abstract: The present disclosure relates to a device that includes, in order, an emitter layer, a quantum well, and a base layer, where the emitter layer has a first bandgap, the base layer has a second bandgap, and the first bandgap is different than the second bandgap by an absolute difference greater than or equal to 25 meV.

Abstract: An aspect of the present disclosure is a photoelectrochemical device that includes a first cell that includes a first semiconductor alloy, a capping layer that includes a second semiconductor alloy, and a passivating layer that includes a third semiconductor alloy, where the passivating layer is positioned between the first cell and the capping layer, and at least a portion of the capping layer is configured to be in direct contact with an electrolyte.

Abstract: The present disclosure relates to a device that includes, in order, an emitter layer, a quantum well, and a base layer, where the emitter layer has a first bandgap, the base layer has a second bandgap, and the first bandgap is different than the second bandgap by an absolute difference greater than or equal to 25 meV.

Abstract: Distributed Bragg reflectors are incorporated into the compositionally graded buffers of metamorphic solar cells, adding functionality to the buffer without adding cost. The reflection aids in collection in subcells that are optically thin due to low diffusion length, high bulk recombination, radiation hardness, partially-absorbing quantum structures, or simply for cost savings. Performance enhancements are demonstrated in GaAs subcells with QWs, which is beneficial when GaAs is not the ideal bandgap.

Abstract: The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.

Abstract: Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.

Abstract: The present disclosure relates to photoelectrochemical devices and systems for capturing the energy of electromagnetic radiation and utilizing the captured energy for electrolysis to produce hydrogen gas and oxygen gas.

Abstract: An aspect of the present disclosure is a photoelectrochemical device that includes a first cell that includes a first semiconductor alloy, a capping layer that includes a second semiconductor alloy, and a passivating layer that includes a third semiconductor alloy, where the passivating layer is positioned between the first cell and the capping layer, and at least a portion of the capping layer is configured to be in direct contact with an electrolyte.

Abstract: The present disclosure relates to photoelectrochemical devices and systems for capturing the energy of electromagnetic radiation and utilizing the captured energy for electrolysis to produce hydrogen gas and oxygen gas.