Abstract: The present disclosure is directed to embodiments of a tower structure with at least partially additively manufactured, stacked tower sections. Embodiments of the tower structure have a plurality of stacked tower sections, wherein at least one tower section of the plurality of stacked tower sections includes a wall element having one or more printed layers, and a base holding thereon the one or more printed layers. The present disclosure also is directed to a method of manufacturing a tower structure using a stacked tower sections and additive manufacturing. Embodiments of the method include forming a base of poured concrete or cast material, printing and depositing one or more printed layers to form a wall element, and stacking the plurality of tower sections to form the tower structure.

Abstract: Compositions and methods for efficiently generating and identifying accurate homologous recombination events are disclosed.

Abstract: A system and method are disclosed for merging multiple spreadsheets into one sheet, and/or exchanging data among the sheets, by expressing each sheet's formulae as an algebraic (equational) theory and each sheet's values as a model of its theory, and then performing one or more of “Kan-extension”, “psuedo-colimit”, and “lifting”, and constructions from category theory, to compute a canonically “universal” integrated theory and model, which can then be expressed as a spreadsheet and from which projections back to the sources are easily constructed.

Abstract: Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. A layer over the conductive levels includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus. In some embodiments the vertically-stacked conductive levels are wordline levels within a NAND memory array. Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. Vertically-stacked NAND memory cells are along the conductive levels within a memory array region. A staircase region is proximate the memory array region. The staircase region has electrical contacts in one-to-one correspondence with the conductive levels. A layer is over the memory array region and over the staircase region. The layer includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus.

Abstract: Provided are novel anti-av?6 antibodies and antibody-drug conjugates and methods of using such anti-av?6 antibodies and antibody-drug conjugates to treat cancer.

Abstract: Systems and methods are provided to create training data, validate, deploy and test artificial intelligence (AI) systems in a virtual development environment, incorporating virtual spaces, objects, machinery, devices, subsystems, and actual human action and behavior.

Abstract: A combustor for a gas turbine engine includes an outer liner having a first end interconnected to an opposite second end by an outer liner wall composed of a plurality of outer segments. The inner liner has a first inner end interconnected to an opposite second inner end by an inner liner wall composed of a plurality of inner segments. The outer liner wall and the inner liner wall define a combustion chamber, and each of the outer wall segments extend at an angle of at least 40 degrees relative to a longitudinal axis. The outer wall segments includes a first segment, a second segment that extends at a second angle relative to the first segment, which is less than a third angle defined between the second segment and a third segment and is substantially the same as a fourth angle defined between the third segment and a fourth segment.

Abstract: Example techniques relate to device spaces and default designations in a media playback system. A device space may create an association between a networked microphone device and one or more playback devices such that certain voice commands (e.g., playback commands) received by the networked microphone device are used to control the one or more playback devices (unless otherwise designated in the voice command). Furthermore, in bonded pairs and bonded groups of playback devices that include at least one NMD, certain playback devices within the bonded pair or group may be designated as default so as to avoid multiple responses to a voice input.

Abstract: A combustor for a gas turbine engine includes an outer liner having a first end interconnected to an opposite second end by an outer liner wall composed of a plurality of outer segments. The inner liner has a first inner end interconnected to an opposite second inner end by an inner liner wall composed of a plurality of inner segments. The outer liner wall and the inner liner wall define a combustion chamber, and each of the outer wall segments extend at an angle of at least 40 degrees relative to a longitudinal axis. The outer wall segments includes a first segment, a second segment that extends at a second angle relative to the first segment, which is less than a third angle defined between the second segment and a third segment and is substantially the same as a fourth angle defined between the third segment and a fourth segment.

Abstract: Example techniques relate to device spaces and default designations in a media playback system. A device space may create an association between a networked microphone device and one or more playback devices such that certain voice commands (e.g., playback commands) received by the networked microphone device are used to control the one or more playback devices (unless otherwise designated in the voice command). Furthermore, in bonded pairs and bonded groups of playback devices that include at least one NMD, certain playback devices within the bonded pair or group may be designated as default so as to avoid multiple responses to a voice input.

Abstract: Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. A layer over the conductive levels includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus. In some embodiments the vertically-stacked conductive levels are wordline levels within a NAND memory array. Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. Vertically-stacked NAND memory cells are along the conductive levels within a memory array region. A staircase region is proximate the memory array region. The staircase region has electrical contacts in one-to-one correspondence with the conductive levels. A layer is over the memory array region and over the staircase region. The layer includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus.

Abstract: Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. A layer over the conductive levels includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus. In some embodiments the vertically-stacked conductive levels are wordline levels within a NAND memory array. Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. Vertically-stacked NAND memory cells are along the conductive levels within a memory array region. A staircase region is proximate the memory array region. The staircase region has electrical contacts in one-to-one correspondence with the conductive levels. A layer is over the memory array region and over the staircase region. The layer includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus.

Abstract: A railroad trailer chassis comprising two or more road axles, two or more rail axles operable to be moved between first and second positions, and a work unit. The railroad trailer chassis is operable to be driven or towed in a road mode when the two or rail axles are in their respective first positions. The railroad trailer chassis is operable to be driven or towed in a rail mode when the two or more rail axles are in their respective second positions. The work unit is operable to perform one or more railroad maintenance or operation functions when driven in the rail mode.

Abstract: A JIT service in a cloud computing environment manages just-in-time access to resources in the cloud computing environment for an external device. When JIT access to a resource is requested by a device, the JIT service retrieves a JIT policy for the resource that includes screening criteria limiting automatic granting of JIT access to users who meet the screening criteria. Screening information for a user associated with the request is evaluated against one or more screening requirements set forth by the screening criteria. If the screening criteria and any other criteria of the JIT policy are satisfied, the JIT service provisions JIT access to the resource for the device.

Abstract: Example techniques relate to device spaces and default designations in a media playback system. A device space may create an association between a networked microphone device and one or more playback devices such that certain voice commands (e.g., playback commands) received by the networked microphone device are used to control the one or more playback devices (unless otherwise designated in the voice command). Furthermore, in bonded pairs and bonded groups of playback devices that include at least one NMD, certain playback devices within the bonded pair or group may be designated as default so as to avoid multiple responses to a voice input.

Abstract: Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. A layer over the conductive levels includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus. In some embodiments the vertically-stacked conductive levels are wordline levels within a NAND memory array. Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. Vertically-stacked NAND memory cells are along the conductive levels within a memory array region. A staircase region is proximate the memory array region. The staircase region has electrical contacts in one-to-one correspondence with the conductive levels. A layer is over the memory array region and over the staircase region. The layer includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus.

Abstract: An array of elevationally-extending strings of memory cells, where the memory cells individually comprise a programmable charge storage transistor, comprises a substrate comprising a first region containing memory cells and a second region not containing memory cells laterally of the first region. The first region comprises vertically-alternating tiers of insulative material and control gate material. The second region comprises vertically-alternating tiers of different composition insulating materials laterally of the first region. A channel pillar comprising semiconductive channel material extends elevationally through multiple of the vertically-alternating tiers within the first region. Tunnel insulator, programmable charge storage material, and control gate blocking insulator are between the channel pillar and the control gate material of individual of the tiers of the control gate material within the first region.