Patents by Inventor Ryan Michael Field

Ryan Michael Field has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SYSTEMS AND METHODS FOR IMAGING USING SINGLE PHOTON AVALANCHE DIODES
    Publication number: 20180122848
    Abstract: Single-photon avalanche diode includes a central junction having a central p+ area and a deep-n well in contact with the central p+ area, a p-type guard ring disposed between the central junction and the deep-n well, and a shallow trench isolation separated from the central p+ area. Imaging apparatus includes a plurality of pixels, each pixel comprising a complementary metal-oxide-semiconductor-implemented single photon avalanche device and one or more signal converters electrically coupled thereto and configured to detect changes in output therefrom.
    Type: Application
    Filed: October 23, 2017
    Publication date: May 3, 2018
    Applicant: THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
    Inventors: Kenneth L. Shepard, Ryan Michael Field
  • Systems and methods for imaging using single photon avalanche diodes
    Patent number: 9831283
    Abstract: Single-photon avalanche diode includes a central junction having a central p+ area and a deep-n well in contact with the central p+ area, a p-type guard ring disposed between the central junction and the deep-n well, and a shallow trench isolation separated from the central p+ area. Imaging apparatus includes a plurality of pixels, each pixel comprising a complementary metal-oxide-semiconductor-implemented single photon avalanche device and one or more signal converters electrically coupled thereto and configured to detect changes in output therefrom.
    Type: Grant
    Filed: April 8, 2014
    Date of Patent: November 28, 2017
    Assignee: THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
    Inventors: Kenneth L. Shepard, Ryan Michael Field
  • Systems and methods for CMOS-integrated junction field effect transistors for dense and low-noise bioelectronic platforms
    Patent number: 9741870
    Abstract: A complementary metal oxide semiconductor (CMOS)-integrated junction field effect transistor (JFET) has reduced scale and reduced noise. An exemplary JFET has a substrate layer of one dopant type with a gate layer of that dopant type disposed on the substrate, a depletion channel of a second dopant type disposed on the first gate layer, and a second gate layer of the first dopant type disposed on the depletion channel and proximate a surface of the transistor. The second gate layer can separate the depletion channel from the surface, and the depletion channel separates the first gate layer from the second gate layer.
    Type: Grant
    Filed: April 8, 2015
    Date of Patent: August 22, 2017
    Assignee: The Trustees of Columbia University in the City of New York
    Inventors: Kenneth L. Shepard, Jacob Rosenstein, Ryan Michael Field, Dan Fleischer
  • SYSTEMS AND METHODS FOR CMOS-INTEGRATED JUNCTION FIELD EFFECT TRANSISTORS FOR DENSE AND LOW-NOISE BIOELECTRONIC PLATFORMS
    Publication number: 20150214384
    Abstract: A complementary metal oxide semiconductor (CMOS)-integrated junction field effect transistor (JFET) has reduced scale and reduced noise. An exemplary JFET has a substrate layer of one dopant type with a gate layer of that dopant type disposed on the substrate, a depletion channel of a second dopant type disposed on the first gate layer, and a second gate layer of the first dopant type disposed on the depletion channel and proximate a surface of the transistor. The second gate layer can separate the depletion channel from the surface, and the depletion channel separates the first gate layer from the second gate layer.
    Type: Application
    Filed: April 8, 2015
    Publication date: July 30, 2015
    Applicant: The Trustees of Columbia University in the City of New York
    Inventors: KENNETH L. SHEPARD, Jacob Rosenstein, Ryan Michael Field, Dan Fleischer
  • SYSTEMS AND METHODS FOR IMAGING USING SINGLE PHOTON AVALANCHE DIODES
    Publication number: 20140217264
    Abstract: Single-photon avalanche diode includes a central junction having a central p+ area and a deep-n well in contact with the central p+ area, a p-type guard ring disposed between the central junction and the deep-n well, and a shallow trench isolation separated from the central p+ area. Imaging apparatus includes a plurality of pixels, each pixel comprising a complementary metal-oxide-semiconductor-implemented single photon avalanche device and one or more signal converters electrically coupled thereto and configured to detect changes in output therefrom.
    Type: Application
    Filed: April 8, 2014
    Publication date: August 7, 2014
    Applicant: The Trustees of Columbia University in the City of New York
    Inventors: Kenneth L. Shepard, Ryan Michael Field