Patents by Inventor Ryan Michael Iutzi

Ryan Michael Iutzi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240353323
    Abstract: This disclosure provides an ultra-compact and highly stable and efficient optical measurement system based on principals of optical absorption spectroscopy using substantially collinear pathways. It improves on such an emitter for gas sensing applications and utilizes it in a differential path-length configuration, in which two separate paths have different optical absorption coefficients by an analyte gas or molecule. The combination of two-color emission from the same source as well as two separate path lengths provides four independent measurements that can measure molecular concentration while cancelling out system fluctuations from temperature, humidity, stress, device aging, power, spectral shifts, as well as other environmental factors mechanics that would otherwise interfere with the measurement and limit sensitivity or require significant additional calibration.
    Type: Application
    Filed: July 27, 2022
    Publication date: October 24, 2024
    Inventors: Ryan Michael IUTZI, Ryan FRAZIER
  • Publication number: 20230307576
    Abstract: A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AISb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.
    Type: Application
    Filed: May 23, 2023
    Publication date: September 28, 2023
    Inventors: Shrenik Deliwala, Ryan Michael Iutzi
  • Patent number: 11695093
    Abstract: A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AlSb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.
    Type: Grant
    Filed: November 11, 2019
    Date of Patent: July 4, 2023
    Assignee: Analog Devices, Inc.
    Inventors: Shrenik Deliwala, Ryan Michael Iutzi
  • Publication number: 20200161502
    Abstract: A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AlSb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.
    Type: Application
    Filed: November 11, 2019
    Publication date: May 21, 2020
    Applicant: Analog Devices, Inc.
    Inventors: Shrenik Deliwala, Ryan Michael Iutzi