Abstract: Exemplary processing methods may include providing a component for semiconductor processing to a processing region of a processing chamber. The methods may include providing one or more interface deposition precursors to the processing region. The methods may include depositing a layer of interface material on the component for semiconductor processing in the processing region. The methods may include providing one or more coating deposition precursors to the processing region. The methods may include depositing a layer of coating material on the component for semiconductor processing in the processing region.

Abstract: A method of manufacturing an interconnect in a metal layer in a back-end-of-line of a semiconductor device includes N2 plasma passivation, through an opening a hard mask, of a ruthenium layer on a substrate. The N2 plasma passivation forms a ruthenium nitride layer on the ruthenium layer. The ruthenium nitride layer includes a first portion aligned with the opening and a second portion underneath the hard mask. The method also includes H2 plasma reduction of the ruthenium nitride layer after the N2 plasma passivation. The H2 plasma reduction removes the first portion of the ruthenium nitride layer. The method also includes O2 plasma etching the ruthenium layer after the H2 plasma reduction. The method also includes repeatedly performing the N2 plasma passivation, the H2 plasma reduction, and the O2 plasma etching to remove the ruthenium layer down to the substrate.

Abstract: Exemplary processing methods may include providing a component for semiconductor processing to a processing region of a processing chamber. The methods may include providing one or more deposition precursors to the processing region. The one or more deposition precursors may include a metal-containing precursor and a fluorine-containing precursor. The methods may include depositing a layer of material on the component for semiconductor processing in the processing region. The layer of material comprises a metal-and-fluorine-containing material.

Abstract: Exemplary processing methods may include providing a powder to a processing region of a processing chamber. The methods may include providing one or more deposition precursors to the processing region. The methods may include generating plasma effluents of the one or more deposition precursors. The methods may include depositing a layer of material on the powder in the processing region. The layer of material may include a corrosion-resistant material. A temperature within the processing chamber is maintained at less than or about 700° C.

Abstract: Semiconductor fabrication component preparation methods are described. In embodiments, the methods include forming a first layer on a surface of the semiconductor fabrication component. The first layer is characterized by a porosity of greater than or about 0.01 vol. %. The methods further include depositing a second layer on the first layer, where the second layer is characterized by a porosity of less than or about 20 vol. %. Treated semiconductor fabrication components are also described. In embodiments, the treated components include a first layer formed in the surface of the semiconductor fabrication component, where the first layer is characterized by a porosity of greater than or about 0.01 vol. %., and a second layer positioned on the first layer, where the second layer is characterized by a porosity of less than or about 20 vol. %.