Abstract: Exemplary semiconductor processing systems may include a gas source coupled with a number of processing chambers. The gas source may include a controller. Each chamber may include an exhaust assembly having a foreline and a pump. The systems may include at least one abatement system coupled with each pump. The systems may include a plurality of exhaust lines that extend between each pump and the abatement system. The systems may include a dilution gas source coupled with each exhaust line. The systems may include a mass flow controller coupled between the dilution gas source and each exhaust line. The systems may include a temperature sensor coupled with each exhaust line between the pump and the abatement system. The temperature sensor may be communicatively coupled with the controller of the gas source, which may control flow of a gas to a chamber based on a measurement from the temperature sensor.

Abstract: Embodiments disclosed herein include a particle collection trap for an abatement system for abating compounds produced in semiconductor processes. The particle collection trap includes a device for producing spiral gas flow in the particle collection trap. The spiral gas flow causes particles, which are heavier than the gas, to travel to the outside diameter of the flow path where the gas velocity is slower and to drop out of the gas stream. The device may be a spiral member coupled to a hollow tube or a rolled member having an inner portion coupled to a hollow tube. The particle collection trap increases the accumulation rate of particles in the gas stream without reducing the velocity of the gas flow.