Patents by Inventor Ryan William Grady

Ryan William Grady has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Normally-off cubic phase GaN (c-GaN) HEMT having a gate electrode dielectrically insulated from a c-AlGaN capping layer
    Patent number: 10211328
    Abstract: A normally-off, heterojunction field effect transistor includes an intrinsic cubic-phase gallium nitride (c-GaN) substrate and an aluminum gallium nitride (AlGaN) capping layer disposed on the intrinsic c-GaN substrate. The AlGaN capping layer includes a first sublayer of intrinsic c-phase AlxGa1-xN disposed on the c-GaN substrate, wherein the first sublayer is of a first thickness; a second sublayer of doped c-phase AlxGa1-xN disposed on the first sublayer, and wherein the second sublayer is of a second thickness and is doped with a dopant. An insulating layer is disposed on the AlGaN capping layer, wherein the insulating layer is of a fourth thickness. A source electrode, a drain electrode, and a gate electrode are positioned adjacent to and on top of the insulating layer, respectively.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: February 19, 2019
    Assignee: Board of Trustees of the University of Illinois
    Inventors: Can Bayram, Ryan William Grady, Kihoon Park
  • NORMALLY-OFF, CUBIC PHASE GALLIUM NITRIDE (GAN) FIELD-EFFECT TRANSISTOR
    Publication number: 20180083133
    Abstract: A normally-off, heterojunction field effect transistor includes an intrinsic cubic-phase gallium nitride (c-GaN) substrate and an aluminum gallium nitride (AlGaN) capping layer disposed on the intrinsic c-GaN substrate. The AlGaN capping layer includes a first sublayer of intrinsic c-phase AlxGa1-xN disposed on the c-GaN substrate, wherein the first sublayer is of a first thickness; a second sublayer of doped c-phase AlxGa1-xN disposed on the first sublayer, and wherein the second sublayer is of a second thickness and is doped with a dopant. An insulating layer is disposed on the AlGaN capping layer, wherein the insulating layer is of a fourth thickness. A source electrode, a drain electrode, and a gate electrode are positioned adjacent to and on top of the insulating layer, respectively.
    Type: Application
    Filed: September 13, 2017
    Publication date: March 22, 2018
    Inventors: Can Bayram, Ryan William Grady, Kihoon Park