Patents by Inventor Ryan Wuthrich

Ryan Wuthrich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060289959
    Abstract: A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are formed in the single-crystal Si layer. The STI regions sandwich and define a first single-crystal Si region. Next, silicon-germanium (SiGe) mixture is deposited on top of the structure in a SiGe deposition condition so as to grow (i) a second single-crystal silicon region grows up from the top surface of the first single-crystal silicon region and (ii) first and second polysilicon regions from the top surfaces of the first and second STI regions, respectively. By increasing SiGe deposition temperature and/or lowering precursor flow rate until the resulting yield is within a pre-specified range, a satisfactory SiGe deposition condition can be determined for mass production of the structure.
    Type: Application
    Filed: August 29, 2006
    Publication date: December 28, 2006
    Inventors: Mark Dupuis, Wade Hodge, Daniel Kelly, Ryan Wuthrich
  • Publication number: 20050260826
    Abstract: A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are formed in the single-crystal Si layer. The STI regions sandwich and define a first single-crystal Si region. Next, silicon-germanium (SiGe) mixture is deposited on top of the structure in a SiGe deposition condition so as to grow (i) a second single-crystal silicon region grows up from the top surface of the first single-crystal silicon region and (ii) first and second polysilicon regions from the top surfaces of the first and second STI regions, respectively. By increasing SiGe deposition temperature and/or lowering precursor flow rate until the resulting yield is within a pre-specified range, a satisfactory SiGe deposition condition can be determined for mass production of the structure.
    Type: Application
    Filed: May 19, 2004
    Publication date: November 24, 2005
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Mark Dupuis, Wade Hodge, Daniel Kelly, Ryan Wuthrich
  • Publication number: 20050145172
    Abstract: An apparatus and method for forming at least a portion of an electronic device include a High Vacuum-Chemical Vapor Deposition (UHV-CVD) system and a Low Pressure-Chemical Vapor Deposition (LPCVD) system using a common reactor. The invention overcomes the problem, of silicon containing wafers being dipped in HF acid prior to CVD processing, and the problem of surface passivation between processes in multiple CVD reactors.
    Type: Application
    Filed: February 15, 2005
    Publication date: July 7, 2005
    Applicant: IBM Corporation (Burlington)
    Inventors: Jack Chu, Basanth Jagannathan, Ryan Wuthrich
  • Publication number: 20050054171
    Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
    Type: Application
    Filed: September 29, 2004
    Publication date: March 10, 2005
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jack Chu, Douglas Coolbaugh, James Dunn, David Greenberg, David Harame, Basanth Jagannathan, Robb Johnson, Louis Lanzerotti, Kathryn Schonenberg, Ryan Wuthrich