Patents by Inventor Rym Benaboud

Rym Benaboud has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electronic component comprising a titanium carbonitride (TiCN) barrier layer and process of making the same
    Patent number: 7851915
    Abstract: An electronic component comprising several superimposed layers of materials including a TiCN barrier layer. A process for depositing a TiCN layer in order to obtain an electronic component, where a titanium precursor is chosen from among tetrakis(dimethylamido)titanium and/or tetrakis(diethylamido)titanium and is decomposed on a substrate by plasma-enhanced atomic layer deposition (PEALD) where the plasma is obtained with a hydrogen-rich gas which can contain nitrogen with at most 5 atomic % nitrogen and at least 95 atomic % hydrogen.
    Type: Grant
    Filed: April 30, 2008
    Date of Patent: December 14, 2010
    Assignee: STMicroelectronics S.A.
    Inventors: Pierre Caubet, Rym Benaboud
  • ELECTRONIC COMPONENT COMPRISING A TITANIUM CARBONITRIDE (TiCN) BARRIER LAYER AND PROCESS OF MAKING THE SAME
    Publication number: 20080290417
    Abstract: An electronic component comprising several superimposed layers of materials including a TiCN barrier layer. A process for depositing a TiCN layer in order to obtain an electronic component, where a titanium precursor is chosen from among tetrakis (dimethylamido) titanium and/or tetrakis (diethylamido) titanium and is decomposed on a substrate by plasma-enhanced atomic layer deposition (PEALD) where the plasma is obtained with a hydrogen-rich gas which can contain nitrogen with at most 5 atomic % nitrogen and at least 95 atomic % hydrogen.
    Type: Application
    Filed: April 30, 2008
    Publication date: November 27, 2008
    Applicant: STMicroelectronics SA
    Inventors: Pierre Caubet, Rym Benaboud