Abstract: Provided is a silicide-based alloy material with which environmental load can be reduced and high thermoelectric conversion performance can be obtained. Provided is a silicide-based alloy material including silicon and ruthenium as main components, in which when the contents of silicon and ruthenium are denoted by Si and Ru, respectively, the atomic ratio of the devices constituting the alloy material satisfies the following: 45 atm %?Si/(Ru+Si)?70 atm % 30 atm %?Ru/(Ru+Si)?55 atm %.

Abstract: Provided is a silicide-based alloy material with which environmental load can be reduced and high thermoelectric conversion performance can be obtained. Provided is a silicide-based alloy material including silicon and ruthenium as main components, in which when the contents of silicon and ruthenium are denoted by Si and Ru, respectively, the atomic ratio of the devices constituting the alloy material satisfies the following: 45 atm %?Si/(Ru+Si)?70 atm % 30 atm %?Ru/(Ru+Si)?55 atm %.

Abstract: A silicide-based alloy material and a device in which the silicide-based alloy material is used are disclosed. The silicide-based alloy material can reduce environmental impact and provide high thermoelectric FIGURE of merit at room temperature. Provided is a silicide-based alloy material comprising, as major components, silver, barium and silicon, wherein atomic ratios of elements that constitute the alloy material are as follows: 9 at %?Ag/(Ag+Ba+Si)?27 at %, 20 at %?Ba/(Ag+Ba+Si)?53 at %, and 37 at %?Si/(Ag+Ba+Si)?65 at %, where Ag represents a content of the silver, Ba represents a content of the barium and Si represents a content of the silicon, and the silicide-based alloy material has an average grain size of less than or equal to 20 ?m.

Abstract: An oxide sintered body containing indium, hafnium, tantalum, and oxygen as constituent elements, in which when indium, hafnium, and tantalum are designated as In, Hf, and Ta, respectively, the atomic ratio of Hf/(In+Hf+Ta) is equal to 0.002 to 0.030, and the atomic ratio of Ta/(In+Hf+Ta) is equal to 0.0002 to 0.013.

Abstract: Provided is a silicide-based alloy material with which environmental load can be reduced and high thermoelectric conversion performance can be obtained. Provided is a silicide-based alloy material including silicon and ruthenium as main components, in which when the contents of silicon and ruthenium are denoted by Si and Ru, respectively, the atomic ratio of the devices constituting the alloy material satisfies the following: 45 atm %?Si/(Ru+Si)?70 atm % 30 atm %?Ru/(Ru+Si)?55 atm %.

Abstract: An oxide sintered body containing indium, hafnium, tantalum, and oxygen as constituent elements, in which when indium, hafnium, and tantalum are designated as In, Hf, and Ta, respectively, the atomic ratio of Hf/(In+Hf+Ta) is equal to 0.002 to 0.030, and the atomic ratio of Ta/(In+Hf+Ta) is equal to 0.0002 to 0.013.

Abstract: An oxide sintered body containing indium, hafnium, tantalum, and oxygen as constituent elements, in which when indium, hafnium, and tantalum are designated as In, Hf, and Ta, respectively, the atomic ratio of Hf/(In+Hf+Ta) is equal to 0.002 to 0.030, and the atomic ratio of Ta/(In+Hf+Ta) is equal to 0.0002 to 0.013.

Abstract: Provided are an oxide sintered body that can produce a transparent conductive oxide film having low resistance and exhibiting lower light absorption characteristics in a wide wavelength range, and a transparent conductive oxide film. An oxide sintered body containing indium, hafnium, tantalum, and oxygen as constituent elements, in which when indium, hafnium, and tantalum are designated as In, Hf, and Ta, respectively, the atomic ratio Hf/(In+Hf+Ta) is 0.2 at % to 3.0 at %, and the atomic ratio Ta/(In+Hf+Ta) is 0.02 at % to 1.3 at %, is used.

Abstract: The present invention provides a complex oxide sintered body 10 wherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target.

Abstract: The invention provides an oxide sintered compact 2 composed of a crystal phase which consists of a bixbite-type oxide phase and a perovskite-type oxide phase, or a bixbite-type oxide phase, the crystal phase having indium, tin, strontium and oxygen as the constituent elements, and the indium, the tin and the strontium contents satisfying formulas (1) and (2) in terms of atomic ratio, as well as a sputtering target. There are further provided an oxide transparent conductive film formed using the sputtering target, and a solar cell. Sn/(In+Sn+Sr)=0.01-0.11??(1) Sr/(In+Sn+Sr)=0.0005-0.004??(2) [In formulas (1) and (2), In, Sn and Sr represent indium, tin and strontium contents (atomic percent), respectively.

Abstract: To provide a composite oxide sintered body from which an oxide transparent conductive film having lower light absorption properties in a wide wavelength region and having a low resistance can be obtained, and an oxide transparent conductive film. A composite oxide sintered body containing indium, zirconium, hafnium and oxygen, wherein the atomic ratio of the elements constituting the sintered body satisfies the following formulae, where In, Zr and Hf are respectively contents of indium, zirconium and hafnium: Zr/(In+Zr+Hf)=0.05 to 4.5 at % Hf/(In+Zr+Hf)=0.0002 to 0.15 at %.

Abstract: To provide an oxide sintered body for a sputtering target, which is capable of adding specific elements to from an n-type semiconductor layer to a p-type semiconductor layer surface of a compound thin-film solar cell. An oxide sintered body which contains zinc (Zn) and at least one type of element (X) (excluding a case where magnesium is added alone) that has an ionization potential Ip of 4.5 eV?Ip?8.0 eV and an atomic radius d of 1.20 ??d?2.50 ? and which has a composition ratio (atomic ratio) of 0.0001?X/(Zn+X)?0.20 and a sintered density of at least 95%.

Abstract: To provide a composite oxide sintered body from which an oxide transparent conductive film having lower light absorption properties in a wide wavelength region and having a low resistance can be obtained, and an oxide transparent conductive film. A composite oxide sintered body containing indium, zirconium, hafnium and oxygen, wherein the atomic ratio of the elements constituting the sintered body satisfies the following formulae, where In, Zr and Hf are respectively contents of indium, zirconium and hafnium: Zr/(In+Zr+Hf)=0.05 to 4.5 at % Hf/(In+Zr+Hf)=0.0002 to 0.

Abstract: A transparent conductive zinc oxide based film according to the present invention contains Ti, Al and Zn in such a proportion that satisfies the following formulae (1), (2) and (3) in terms of atomic ratio, and has a plurality of surface textures different in size on a surface, wherein a center-line average surface roughness Ra of the surface of the transparent conductive film is 30 nm to 200 nm, and an average value of widths of the surface textures is 100 nm to 10 ?m. 0.001?Ti/(Zn+Al+Ti)?0.079.??(1) 0.001?Al/(Zn+Al+Ti)?0.079??(2) 0.010?(Ti+Al)/(Zn+Al+Ti)?0.

Abstract: The present invention provides a complex oxide sintered body 10 wherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target.

Abstract: The invention provides an oxide sintered compact 2 composed of a crystal phase which consists of a bixbite-type oxide phase and a perovskite-type oxide phase, or a bixbite-type oxide phase, the crystal phase having indium, tin, strontium and oxygen as the constituent elements, and the indium, the tin and the strontium contents satisfying formulas (1) and (2) in terms of atomic ratio, as well as a sputtering target. There are further provided an oxide transparent conductive film formed using the sputtering target, and a solar cell. Sn/(In+Sn+Sr)=0.01-0.11??(1) Sr/(In+Sn+Sr)=0.0005-0.004??(2) [In formulas (1) and (2), In, Sn and Sr represent indium, tin and strontium contents (atomic percent), respectively.

Abstract: A transparent conductive zinc oxide based film according to the present invention contains Ti, Al and Zn in such a proportion that satisfies the following formulae (1), (2) and (3) in terms of atomic ratio, and has a plurality of surface textures different in size on a surface, wherein a center-line average surface roughness Ra of the surface of the transparent conductive film is 30 nm to 200 nm, and an average value of widths of the surface textures is 100 nm to 10 ?m. 0.001?Ti/(Zn+Al+Ti)?0.079.??(1) 0.001?Al/(Zn+Al+Ti)?0.079??(2) 0.010?(Ti+Al)/(Zn+Al+Ti)?0.