Patents by Inventor Ryo Arasawa
Ryo Arasawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11901485Abstract: An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.Type: GrantFiled: May 24, 2022Date of Patent: February 13, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Ryo Arasawa, Hideaki Shishido
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Publication number: 20240030429Abstract: A positive electrode active material in which the number of defects that cause deterioration is small or progress of the defect is suppressed is provided. The positive electrode active material is used for a secondary battery. The positive electrode active material contains lithium cobalt oxide containing an additive element. After a cycle test is performed on a cell that uses the positive electrode active material for a positive electrode and a lithium electrode as a counter electrode, the positive electrode active material includes a defect and contains at least the same element as the additive element in a region in the vicinity of the defect. The additive element is contained also in a surface portion of the positive electrode active material.Type: ApplicationFiled: October 28, 2021Publication date: January 25, 2024Inventors: Shunpei YAMAZAKI, Ryo ARASAWA, Shunichi ITO, Shiori SAGA, Yohei MOMMA, Jo SAITO, Kunihiko SUZUKI, Teppei OGUNI, Yuji IWAKI, Kanta ABE
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Publication number: 20230290317Abstract: It is an object to provide a semiconductor device which can supply a signal with sufficient amplitude to a scan line while power consumption is kept small. Further, it is an object to provide a semiconductor device which can suppress distortion of a signal supplied to the scan line and shorten a rising time and a falling time while power consumption is kept small. A semiconductor device which includes a plurality of pixels each including a display element and at least one first transistor and a scan line driver circuit supplying a signal for selecting the plurality of pixels to a scan line. A light-transmitting conductive layer is used for a pixel electrode layer of the display element, a gate electrode layer of the first transistor, source and drain electrode layers of the first transistor, and the scan line.Type: ApplicationFiled: May 22, 2023Publication date: September 14, 2023Inventors: Atsushi UMEZAKI, Ryo ARASAWA
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Publication number: 20230262952Abstract: A semiconductor device with a small variation in transistor characteristics can be provided. A step of forming an opening in a structure body including an oxide semiconductor device to reach the oxide semiconductor device, a step of embedding a first conductor in the opening, a step of forming a second conductor in contact with a top surface of the first conductor, a step of forming a first barrier insulating film by a sputtering method to cover the structure body, the first conductor, and the second conductor, and a step of forming a second barrier insulating film over the first barrier insulating film by an ALD method are included. The first barrier insulating film and the second barrier insulating film each have a function of inhibiting hydrogen diffusion.Type: ApplicationFiled: August 5, 2021Publication date: August 17, 2023Inventors: Shunpei YAMAZAKI, Motomu KURATA, Tsutomu MURAKAWA, Ryo ARASAWA, Kunihiro FUKUSHIMA, Yasumasa YAMANE, Shinya SASAGAWA
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Patent number: 11663989Abstract: It is an object to provide a semiconductor device which can supply a signal with sufficient amplitude to a scan line while power consumption is kept small. Further, it is an object to provide a semiconductor device which can suppress distortion of a signal supplied to the scan line and shorten a rising time and a falling time while power consumption is kept small A semiconductor device which includes a plurality of pixels each including a display element and at least one first transistor and a scan line driver circuit supplying a signal for selecting the plurality of pixels to a scan line. A light-transmitting conductive layer is used for a pixel electrode layer of the display element, a gate electrode layer of the first transistor, source and drain electrode layers of the first transistor, and the scan line.Type: GrantFiled: June 24, 2022Date of Patent: May 30, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Atsushi Umezaki, Ryo Arasawa
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Publication number: 20230132598Abstract: A semiconductor device in which variations in characteristics, deterioration of elements, and abnormality in shape are inhibited is provided. The semiconductor device includes a first region including a plurality of elements and a second region including a plurality of dummy elements. The second region is provided in an outer edge of the first region, and the element and the dummy element each include an oxide semiconductor. The element and the dummy element have the same structure, and a structure body included in the element and a structure body included in the dummy element are formed with the same material and provided in the same layer. The oxide semiconductor includes In, an element M (M is Al, Ga, Y, or Sn), and Zn.Type: ApplicationFiled: December 29, 2022Publication date: May 4, 2023Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Shinya SASAGAWA, Erika TAKAHASHI, Katsuaki TOCHIBAYASHI, Ryo ARASAWA
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Patent number: 11545551Abstract: A semiconductor device in which variations in characteristics, deterioration of elements, and abnormality in shape are inhibited is provided. The semiconductor device includes a first region including a plurality of elements and a second region including a plurality of dummy elements. The second region is provided in an outer edge of the first region, and the element and the dummy element each include an oxide semiconductor. The element and the dummy element have the same structure, and a structure body included in the element and a structure body included in the dummy element are formed with the same material and provided in the same layer. The oxide semiconductor includes In, an element M (M is Al, Ga, Y, or Sn), and Zn.Type: GrantFiled: April 17, 2019Date of Patent: January 3, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Shinya Sasagawa, Erika Takahashi, Katsuaki Tochibayashi, Ryo Arasawa
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Publication number: 20220406268Abstract: It is an object to provide a semiconductor device which can supply a signal with sufficient amplitude to a scan line while power consumption is kept small. Further, it is an object to provide a semiconductor device which can suppress distortion of a signal supplied to the scan line and shorten a rising time and a falling time while power consumption is kept small A semiconductor device which includes a plurality of pixels each including a display element and at least one first transistor and a scan line driver circuit supplying a signal for selecting the plurality of pixels to a scan line. A light-transmitting conductive layer is used for a pixel electrode layer of the display element, a gate electrode layer of the first transistor, source and drain electrode layers of the first transistor, and the scan line.Type: ApplicationFiled: June 24, 2022Publication date: December 22, 2022Inventors: Atsushi UMEZAKI, Ryo ARASAWA
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Publication number: 20220293818Abstract: An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge oft region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.Type: ApplicationFiled: May 24, 2022Publication date: September 15, 2022Inventors: Ryo ARASAWA, Hideaki SHISHIDO
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Patent number: 11373615Abstract: It is an object to provide a semiconductor device which can supply a signal with sufficient amplitude to a scan line while power consumption is kept small. Further, it is an object to provide a semiconductor device which can suppress distortion of a signal supplied to the scan line and shorten a rising time and a falling time while power consumption is kept small. A semiconductor device which includes a plurality of pixels each including a display element and at least one first transistor and a scan line driver circuit supplying a signal for selecting the plurality of pixels to a scan line. A light-transmitting conductive layer is used for a pixel electrode layer of the display element, a gate electrode layer of the first transistor, source and drain electrode layers of the first transistor, and the scan line.Type: GrantFiled: October 14, 2020Date of Patent: June 28, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Atsushi Umezaki, Ryo Arasawa
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Patent number: 11355669Abstract: An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.Type: GrantFiled: January 7, 2020Date of Patent: June 7, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Ryo Arasawa, Hideaki Shishido
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Publication number: 20210175334Abstract: A semiconductor device in which variations in characteristics, deterioration of elements, and abnormality in shape are inhibited is provided. The semiconductor device includes a first region including a plurality of elements and a second region including a plurality of dummy elements. The second region is provided in an outer edge of the first region, and the element and the dummy element each include an oxide semiconductor. The element and the dummy element have the same structure, and a structure body included in the element and a structure body included in the dummy element are formed with the same material and provided in the same layer. The oxide semiconductor includes In, an element M (M is Al, Ga, Y, or Sn), and Zn.Type: ApplicationFiled: April 17, 2019Publication date: June 10, 2021Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Shinya SASAGAWA, Erika TAKAHASHI, Katsuaki TOCHIBAYASHI, Ryo ARASAWA
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Publication number: 20210118392Abstract: It is an object to provide a semiconductor device which can supply a signal with sufficient amplitude to a scan line while power consumption is kept small. Further, it is an object to provide a semiconductor device which can suppress distortion of a signal supplied to the scan line and shorten a rising time and a falling time while power consumption is kept small. A semiconductor device which includes a plurality of pixels each including a display element and at least one first transistor and a scan line driver circuit supplying a signal for selecting the plurality of pixels to a scan line. A light-transmitting conductive layer is used for a pixel electrode layer of the display element, a gate electrode layer of the first transistor, source and drain electrode layers of the first transistor, and the scan line.Type: ApplicationFiled: October 14, 2020Publication date: April 22, 2021Inventors: Atsushi Umezaki, Ryo Arasawa
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Patent number: 10810961Abstract: It is an object to provide a semiconductor device which can supply a signal with sufficient amplitude to a scan line while power consumption is kept small. Further, it is an object to provide a semiconductor device which can suppress distortion of a signal supplied to the scan line and shorten a rising time and a falling time while power consumption is kept small. A semiconductor device which includes a plurality of pixels each including a display element and at least one first transistor and a scan line driver circuit supplying a signal for selecting the plurality of pixels to a scan line. A light-transmitting conductive layer is used for a pixel electrode layer of the display element, a gate electrode layer of the first transistor, source and drain electrode layers of the first transistor, and the scan line.Type: GrantFiled: January 10, 2018Date of Patent: October 20, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Atsushi Umezaki, Ryo Arasawa
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Publication number: 20200295199Abstract: A liquid crystal display device is provided in which the aperture ratio can be increased in a pixel including a thin film transistor in which an oxide semiconductor is used. In the liquid crystal display device, the thin film transistor including a gate electrode, a gate insulating layer and an oxide semiconductor layer which are provided so as to overlap with the gate electrode, and a source electrode and a drain electrode which overlap part of the oxide semiconductor layer is provided between a signal line and a pixel electrode which are provided in a pixel portion. The off-current of the thin film transistor is 1×1013 A or less. A potential can be held only by a liquid crystal capacitor, without a capacitor which is parallel to a liquid crystal element, and a capacitor connected to the pixel electrode is not formed in the pixel portion.Type: ApplicationFiled: May 29, 2020Publication date: September 17, 2020Inventors: Ryo ARASAWA, Hideaki SHISHIDO, Shunpei YAMAZAKI
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Patent number: 10714622Abstract: A liquid crystal display device is provided in which the aperture ratio can be increased in a pixel including a thin film transistor in which an oxide semiconductor is used. In the liquid crystal display device, the thin film transistor including a gate electrode, a gate insulating layer and an oxide semiconductor layer which are provided so as to overlap with the gate electrode, and a source electrode and a drain electrode which overlap part of the oxide semiconductor layer is provided between a signal line and a pixel electrode which are provided in a pixel portion. The off-current of the thin film transistor is 1×10?13 A or less. A potential can be held only by a liquid crystal capacitor, without a capacitor which is parallel to a liquid crystal element, and a capacitor connected to the pixel electrode is not formed in the pixel portion.Type: GrantFiled: January 26, 2017Date of Patent: July 14, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Ryo Arasawa, Hideaki Shishido, Shunpei Yamazaki
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Publication number: 20200144447Abstract: An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.Type: ApplicationFiled: January 7, 2020Publication date: May 7, 2020Inventors: Ryo ARASAWA, Hideaki SHISHIDO
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Patent number: 10565946Abstract: In a liquid crystal display device including a plurality of pixels in a display portion and configured to performed display in a plurality of frame periods, each of the frame periods includes a writing period and a holding period, and after an image signal is input to each of the plurality of pixels in the writing period, a transistor included in each of the plurality of pixels is turned off and the image signal is held for at least 30 seconds in the holding period. The pixel includes a semiconductor layer including an oxide semiconductor layer, and the oxide semiconductor layer has a carrier concentration of less than 1×1014/cm3.Type: GrantFiled: November 28, 2017Date of Patent: February 18, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Ryo Arasawa, Jun Koyama, Masashi Tsubuku, Kosei Noda
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Patent number: 10566497Abstract: An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.Type: GrantFiled: August 5, 2019Date of Patent: February 18, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Ryo Arasawa, Hideaki Shishido
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Publication number: 20190355873Abstract: An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.Type: ApplicationFiled: August 5, 2019Publication date: November 21, 2019Inventors: Ryo ARASAWA, Hideaki SHISHIDO