Abstract: In an emigration control method, information on a passport-issue-allowed person and image data for specifying the person are stored in a storage. Image data for specifying a person who owns the passport to be inspected by an emigration inspection and information for specifying the passport-issue-allowed person are received. The passport-holding-person specifying image data is stored into an emigrant information storage in correspondence with the passport-issue-allowed person specifying information The passport-issue-allowed person specifying image data, the passport-issue-allowed person information, and the passport-holding-person specifying image data are extracted based upon the received passport-issue-allowed person specifying information.

Abstract: In an emigration control method, information on a passport-issue-allowed person and image data for specifying the person are stored in a storage. Image data for specifying a person who owns the passport to be inspected by an emigration inspection and information for specifying the passport-issue-allowed person are received. The passport-holding-person specifying image data is stored into an emigrant information storage in correspondence with the passport-issue-allowed person specifying information. The passport-issue-allowed person specifying image data, the passport-issue-allowed person information, and the passport-holding-person specifying image data are extracted based upon the received passport-issue-allowed person specifying information. The passport-issue-allowed person specifying image data is identified with the passport-holding-person specifying image data.

Abstract: An object of the present invention is to provide a novel tracking method and device, suitable for use in a recording means applying the technology of a scanning probe microscope, for recording and/or reproducing high-density information of a size of several tens of nm or less at high speed and with high accuracy. The tracking method and device includes a recording medium having bumpy structures for tracking, which are formed on the surface thereof, a cantilever having a tip for writing in, reading out and erasing information, and means for detecting bending and torsion of the cantilever. Further, the tip and the recording medium are moved relative to each other in the direction in which a fixed end and a free end of the cantilever are coupled to each other, in a state in which the tip has been brought into proximity to or contact with the recording medium.

Abstract: An information recording apparatus having a light generator for emitting light as a signal of information being recorded, a probe formed of an optical fiber for physically or chemically changing a recording medium on the basis of the light, a slider coupled to the probe and maintaining the distance between the tip of the optical fiber and the recording medium to be within the radius of an aperture provided at the tip of the optical fiber when recording is made, a medium support for supporting the recording medium, and a medium driving mechanism for driving the recording medium to move.

Abstract: A fine-fabrication method of solid surfaces relates to a new surface fabrication method allows a solid-device surface to be fabricated at an atomic scale so as to produce an ultra-fine device or a device for recording information at an ultra-high density. A probe is installed with a tip thereof facing to the surface of a specimen to undergo fabrication. A voltage for forming an electric field is applied between the probe and the specimen. The electric field is large enough to field-evaporate atoms constituting the specimen or the probe; the electric field field-evaporates atoms constituting the specimen, removing them from the surface of the specimen; and as another alternative, the electric field field-evaporates atoms constituting the probe, depositing them on the surface of the specimen.

Abstract: A method and apparatus for precision machining a surface suitable for use as a data recorder, using a scanning probe microscope (SPM) capable of observing an electrically insulating surface. The SPM includes a probe which comprises a tip having a pointed end, and also including a conductive layer applied on a surface of the tip. The tip is brought into close proximity to the surface which is to be machined and a machining voltage is applied between the tip and the surface to machine the surface.

Abstract: A mask structure has two (or more) groups of device patterns formed on one transparent support plate. Each of the device patterns has a transparent partial pattern. One or both of the groups of device patterns are provided with phase shifting patterns for improvement of the resolution in the lithography. The transparent partial pattern in each of the device patterns in each of the device pattern groups is determined such that each of the transparent partial patterns held by one of the device pattern groups is adapted for combination with one transparent partial pattern held by the other device pattern group by two or more times of transmission of an exposure beam through the mask structure. Manufacturing of solid-state devices is possible by use of the mask structure, in which exposure of a photo-sensitive film on a substrate to an exposure beam through the mask structure is repeated two or more times with a relative position between the mask structure and the substrate being changed.

Abstract: A method and apparatus for precision machining a surface suitable for use as a data recorder, using a scanning probe microscope (SPM) capable of observing an electrically insulating surface. The SPM includes a probe which comprises a tip having a pointed end, and also including a conductive layer applied on a surface of the tip. The tip is brought into close proximity to the surface which is to be machined and a machining voltage is applied between the tip and the surface to machine the surface.

Abstract: A fine-fabrication method of solid surfaces relates to a new surface fabrication method allows a solid-device surface to be fabricated at an atomic scale so as to produce an ultra-fine device or a device for recording information at an ultra-high density. A probe is installed with a tip thereof facing to the surface of a specimen to undergo fabrication. A voltage for forming an electric field is applied between the probe and the specimen. The electric field is large enough to field-evaporate atoms constituting the specimen or the probe; the electric field field-evaporates atoms constituting the specimen, removing them from the surface of the specimen; and as another alternative, the electric field field-evaporates atoms constituting the probe, depositing them on the surface of the specimen.

Abstract: An information recording and reproducing apparatus which has a memory portion which uses the Bloch lines occurring at the magnetic domain walls at the periphery of magnetic domains present in magnetic garnet films as the information carrier, a drive portion to write information into or read information from the said memory portion, and in which the memory portion is constructed to be connectable to and disconnectable from the drive means, wherein the signal transfer is carried out via a connection means when the said memory portion is set in the drive portion. In this information recording and reproducing apparatus, since the recording portion can be freely connected to or disconnected from the drive portion, it is possible to selectively insert portable substrates storing different information in the same apparatus body portion.

Abstract: An information storage apparatus in which one unit (or one bit) of information is stored by bringing a fine tip electrode with a tip portion of a dimension on the order of an inter-atomic distance (or several angstroms) in proximity to an atom on a flat surface of a material (for example, a semiconductor) with a gap on the order of an inter-atomic distance being provided between the tip electrode and the atom, and applying a voltage to the tip electrode so that the alignment of a dimer (or a pair of atoms) on the material surface in the vicinity of the tip electrode is changed by virtue of a tunnelling effect which is a quantum mechanical effect.

Abstract: In a solid state magnetic memory device wherein the information storing region of a Bloch line memory device using Bloch lines generated in magnetic domain walls as information carriers is covered with a magnetic material film having stripe domains perpendicular to the magnetic domain walls, the information storing position is determined by the stripe domains and a memory density of more than several tens giga bits per cm.sup.2 can be realized.

Abstract: Ion implantation is conducted in a desired area(s) of the surface of a magnetic layer, and annealing of the layer is carried out to control the composition in that desired area(s). The control of the composition may be facilitated by applying a one-directional or rotating magnetic field during ion implantation. In preparing a magnetic head, a portion of a magnetic pole at least on one side thereof in close proximity to a magnetic recording medium is formed into an iron or iron-based magnetic alloy film, at least part of which is subjected to ion implantation and annealing.

Abstract: Ion implantation is conducted in a desired area(s) of the surface of a magnetic layer, and annealing of the layer is carried out to control the composition in that desired area(s). The control of the composition may be facilitated by applying a one-directional or rotating magnetic field during ion implantation. In preparing a magnetic head, a portion of a magnetic pole at least on one side thereof in close proximity to a magnetic recording medium is formed into an iron or iron-based magnetic alloy film, at least part of which is subjected to ion implantation and annealing.

Abstract: In a magnetic bubble device, a strain layer formed on the surface of a magnetic bubble garnet film by ion-implantation is required to have anisotropy field of great strength in the in-plane direction for driving magnetic bubbles. For preventing the effective anisotropy field change from being decreased by heat treatment, ion species having large mass and projected standard deviation not greater than 1000 .ANG. are implanted. The ion species are preferably selected from He to Kr in the periodic table. The heat treatment is effected at a temperature in a range of 450.degree. C. to 900.degree. C.

Abstract: There have been known various methods for controlling the magnetic anisotropy of a magnetic film with a magnetic field being applied thereto. In accordance with the present invention, the magnetic anisotropy is controlled by implanting ions into the magnetic film while applying a magnetic field thereto. The direction for applying the magnetic field can be arbitrarily selected, for example, along an inplane direction of the magnetic film and along a direction vertical thereto. The magnetic anisotropy can be controlled only in the desired areas by limiting the areas to which ions are implanted with a mask disposed on the magnetic film.

Abstract: A method of fabricating a magnetic bubble memory device is disclosed in which a desired portion of a surface region in a magnetic bubble film for magnetic bubbles is implanted with hydrogen ions with an ion dose of 2.5.times.10.sup.16 to 1.times.10.sup.17 cm.sup.-2, the surface of magnetic bubble film thus formed is covered with a film, and then the magnetic bubble film is annealed. According to this method, a reduction in propagation margin due to annealing is effectively prevented, and it is possible to form a magnetic bubble memory device of the contiguous disk type which is excellent in thermal stability.

Abstract: A method of fabricating a magnetic bubble memory device is disclosed in which ions are implanted in a desired portion of a surface region in a magnetic bubble film for magnetic bubbles to form a strain layer having a strain of about 1% to about 2.5%, a film is provided on the magnetic bubble film so as to cover the magnetic bubble film with the film and then the magnetic bubble film is annealed under predetermined conditions, thereby providing a practical magnetic bubble memory device having a large bias margin.

Abstract: Hydrogen ion is implanted twice or more at different acceleration voltages into desired portions of a magnetic film holding magnetic bubbles to form a magnetic bubble propagation path. This ensures production of an ion-implanted device having a sufficiently large anisotropic magnetic field parallel to the magnetic film and a high Curie temperature.

Abstract: A method of implanting a magnetic garnet film with ions is disclosed in which a covering film is provided on a monocrystalline magnetic garnet film for magnetic bubbles, and hydrogen ions are implanted in a desired portion of a surface region in the magnetic garnet film through the covering film. According to this method, it is possible to form an ion-implanted layer in which the ion concentration distribution in the direction of depth is uniform, and moreover the inplane anisotropy field in the ion-implanted layer decreases only a little with time in an annealing process.