Patents by Inventor Ryo ISHIMARU

Ryo ISHIMARU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma etching method
    Patent number: 10229838
    Abstract: A plasma etching method for etching a film containing a tungsten element using plasma, wherein the film containing a tungsten element is etched by using a gas containing a silicon element, a gas containing a halogen element, and a gas containing a carbon element and an oxygen element.
    Type: Grant
    Filed: September 12, 2017
    Date of Patent: March 12, 2019
    Assignee: HITACH HIGH-TECHNOLOGIES CORPORATION
    Inventors: Ryo Ishimaru, Satoshi Une, Masahito Mori
  • PLASMA ETCHING METHOD
    Publication number: 20180122651
    Abstract: A plasma etching method for etching a film containing a tungsten element using plasma, wherein the film containing a tungsten element is etched by using a gas containing a silicon element, a gas containing a halogen element, and a gas containing a carbon element and an oxygen element.
    Type: Application
    Filed: September 12, 2017
    Publication date: May 3, 2018
    Inventors: Ryo ISHIMARU, Satoshi UNE, Masahito MORI