Abstract: A resist underlayer film not undergoing intermixing with a resist layer, having high dry etching and heat resistance, exhibiting high temperature low mass loss, and exhibiting even stepped substrate coatability, includes a polymer containing a unit structure of the formula (1): The unit structure of formula (1) is a unit structure of the formula (2): A method for producing a semiconductor device, includes forming, on a semiconductor substrate, a resist underlayer film using a resist underlayer film-forming composition, forming a hard mask on the resist underlayer film, a resist film on the hard mask, a resist pattern by irradiation with light or an electron beam and development of the resist film, a pattern by etching the hard mask using the resist pattern, a pattern by etching the underlayer film using the patterned hard mask, and processing the substrate using the patterned resist underlayer film.

Abstract: A resist underlayer film-forming composition for lithography capable of being dry-etched during pattern transfer from the upper layer or during substrate processing and capable of being removed with an alkaline aqueous solution after the substrate processing. A resist underlayer film-forming composition for lithography includes a polymer (A) including a unit structure of Formula (1) and a unit structure of Formula (2); a crosslinkable compound (B) having at least two groups selected from blocked isocyanate groups, methylol group, or C1-5 alkoxy methyl groups; and a solvent (C), characterized in that the polymer (A) is a polymer in which the unit structure of Formula (1) and the unit structure of Formula (2) are copolymerized in a mol % ratio of the unit structure of Formula (1):the unit structure of Formula (2)=25 to 60:75 to 40.

Abstract: A resist underlayer film-forming composition comprising a novolac resin obtained by reacting an aromatic compound (A) with an aldehyde (B) having formyl group bonded to a secondary carbon atom or tertiary carbon atom of a C2-26 alkyl group. A resist underlayer film-forming composition according to the first aspect, in which the novolac resin comprises a unit structure of Formula (1): (in Formula (1), A is a bivalence group derived from a C6-40 aromatic compound; b1 is a C1-16 alkyl group; and b2 is a hydrogen atom or a C1-9 alkyl group). A is the bivalent group derived from an aromatic compound comprising an amino group, a hydroxy group, or both an amino group and a hydroxy group.

Abstract: A resist underlayer film-forming composition in which a coating film having high flattening properties is formed on a substrate. A resist underlayer film-forming composition including an epoxy adduct (C) obtained by reacting an epoxy group-containing compound (A) with an epoxy adduct-forming compound (B), wherein one or both of the epoxy group-containing compound (A) and the epoxy adduct-forming compound (B) contain an optionally branched alkyl group having a carbon atom number of three or more. The epoxy adduct-forming compound (B) is at least one compound selected from the group consisting of carboxylic acid (B1), carboxylic anhydride (B2), a phenol compound (B3), a hydroxyl group-containing compound (B4), a thiol compound (B5), an amino compound (B6), and an imide compound (B7). The optionally branched alkyl group having a carbon atom number of three or more is contained in the epoxy adduct-forming compound (B). The optionally branched alkyl group has a C3-19 alkyl group.

Abstract: A method forms a resist underlayer film that has high resistance to dry etching using a gas containing a fluorocarbon. A method for forming a resist underlayer film includes the steps of: applying to a substrate a resist underlayer film-forming composition containing a fullerene derivative in which one to six molecules of malonic acid diester of the following Formula (1): wherein two Rs are each independently a C1-10 alkyl group, are added to one molecule of fullerene, a compound having at least two epoxy groups, and a solvent; and baking the substrate applied with the resist underlayer film-forming composition at least one time at a temperature of 240° C. or higher under an atmosphere of nitrogen, argon, or a mixture thereof.

Abstract: A resist underlayer film-forming composition for lithography capable of being dry-etched during pattern transfer from the upper layer or during substrate processing and capable of being removed with an alkaline aqueous solution after the substrate processing. A resist underlayer film-forming composition for lithography includes a polymer (A) including a unit structure of Formula (1) and a unit structure of Formula (2); a crosslinkable compound (B) having at least two groups selected from blocked isocyanate groups, methylol group, or C1-5 alkoxy methyl groups; and a solvent (C), characterized in that the polymer (A) is a polymer in which the unit structure of Formula (1) and the unit structure of Formula (2) are copolymerized in a mol % ratio of the unit structure of Formula (1):the unit structure of Formula (2)=25 to 60:75 to 40.

Abstract: A resist underlayer film-forming composition for lithography capable of being dry-etched during pattern transfer from the upper layer or during substrate processing and capable of being removed with an alkaline aqueous solution after the substrate processing. The composition includes a polymer (A) having an acrylamide structure or an acrylic acid ester structure; a polymer (B) having a blocked isocyanate structure; and a solvent (C). The polymer (A) is a polymer including a unit structure of Formula (1). The polymer (B) is a polymer including a unit structure of Formula (2). A method for manufacturing a semiconductor device includes steps for: forming a resist pattern; etching an inorganic hard mask layer with use of the resist pattern; etching a resist underlayer film with use of the pattered inorganic hard mask layer; and processing a semiconductor substrate with use of the pattered resist underlayer film.

Abstract: An image processing device includes: a determining unit configured to determine, in accordance with two images corresponding to temporally adjacent image data input from an external device, whether or not a field area at a time of imaging has been changed; and a suppressing unit configured to generate and output suppressed image data with an amount of visually recognizable information included in the images being suppressed by performing image processing of reducing at least one of a contrast and a chroma of the images at a time the determining unit determines that the field area at the time of imaging has been changed.

Abstract: Whereas, conventionally, ashing had been used at the time of removal, the present invention provides a material for forming an organic hard mask that can be removed by an alkaline aqueous solution, and thus can be expected to reduce damage to the substrate at the time of the removal. A composition for forming an organic hard mask layer comprising: a polymer (A) including a structural unit of Formula (1) and a structural unit of Formula (2); a crosslinkable compound (B) including at least two of blocked isocyanate groups, methylol groups, or C1-5 alkoxymethyl groups; and a solvent (C), wherein an organic hard mask layer obtained from the composition for forming an organic hard mask layer is used at the lowest layer in a lithography process using a multi-layer film, wherein R1 to R4 have the same definition as ones in the specification.

Abstract: A film with reduced formation of an edge reservoir at a periphery of a film in which the edge reservoir causes an unnecessary residue that cannot be removed by an etching process, and a method for forming the film. A film forming composition for use in a lithography process includes a surfactant containing a polymer and an oligomer having a C3-5 perfluoroalkyl partial structure. The perfluoroalkyl partial structure may further include an alkyl partial structure. The surfactant is contained in an amount of 0.0001% by mass to 1.5% by mass based on the total solid content of the film forming composition. The film forming composition further includes a coating film resin, the coating film resin is a novolac resin, a condensation epoxy resin, a (meth)acylic resin, a polyether-based resin, or a silicon-containing resin, etc. The formed film can be used as a resist underlayer film or a resist overlayer film.

Abstract: There is provided a composition for forming a resist underlayer film which has high dry-etching resistance and wiggling resistance, and achieves excellent planarizing properties for a semiconductor substrate surface having level differences or irregular portions. A resist underlayer film-forming composition including a phenol novolac resin that is obtained by causing a compound that has at least three phenolic groups, in which each of the phenolic groups has a structure bonded to a tertiary carbon atom or has a structure bonded to a quaternary carbon atom to which a methyl group binds, to react with an aromatic aldehyde or an aromatic ketone in the presence of an acid catalyst.

Abstract: An excellent resist underlayer film having a selectivity of dry etching rate close to that of a resist, selectivity of dry etching rate lower than that of a resist, or selectivity of dry etching rate lower than that of semiconductor substrate. Resist underlayer film-forming composition including a polymer containing unit structure of Formula (1): (where R3 is hydrogen atom, or C6-40 aryl group or heterocyclic group optionally substituted with halogen group, nitro group, amino group, carbonyl group, C6-40 aryl group, or hydroxy group; R4 is a hydrogen atom, or C1-10 alkyl group, C6-40 aryl group, or heterocyclic group optionally substituted with halogen group, nitro group, amino group, or hydroxy group; R3 and R4 optionally form ring together with carbon atoms bonded thereto; and n is an integer of 0 to 2).

Abstract: There is provided a resist underlayer film used in lithography process that has a high n value and a low k value, and can effectively reduce reflection of light having a wavelength of 193 nm from the substrate in a three-layer process in which the resist underlayer film is used in combination with a silicon-containing intermediate layer. A resist underlayer film-forming composition used in lithography process including: a polymer containing a unit structure including a product obtained by reaction of a condensed heterocyclic compound and a bicyclo ring compound. The condensed heterocyclic compound is a carbazole compound or a substituted carbazole compound. The bicyclo ring compound is dicyclopentadiene, substituted dicyclopentadiene, tetracyclo[4.4.0.12,5.17,10]dodeca-3,8-diene, or substituted tetracyclo[4.4.0.12,5.17,10]dodeca-3,8-diene.

Abstract: There is provided a composition for forming a resist underlayer film having heat resistance for use in a lithography process in semiconductor device production. A composition for forming a resist underlayer film, comprising a polymer that contains a unit structure of formula (1) and a unit structure of formula (2) in a proportion of 3 to 97:97 to 3 in molar ratio: A method for producing a semiconductor device, including the steps of: forming an underlayer film using the composition for forming a resist underlayer film on a semiconductor substrate; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a patterned resist film and developing; etching the hard mask according to the patterned resist film; etching the underlayer film according to the patterned hard mask; and processing the semiconductor substrate according to the patterned underlayer film.

Abstract: A resist underlayer film-forming composition for forming a resist underlayer film having both dry etching resistance and heat resistance. A resist underlayer film-forming composition comprising a polymer containing a unit structure of Formula (1): In Formula (1), R3 is a hydrogen atom, and both n1 and n2 are 0. A method for producing a semiconductor device comprising the steps of: forming an underlayer film on a semiconductor substrate using the resist underlayer film-forming composition; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or electron beams and development; etching the hard mask using the resist pattern; etching the underlayer film using the hard mask patterned; and fabricating the semiconductor substrate using the patterned underlayer film.

Abstract: There is provided resist underlayer film for lithography process with high dry etching resistance, wiggling resistance, and heat resistance. Resist underlayer film-forming composition for lithography including polymer having unit structure of Formula (1): wherein A is hydroxy group-substituted C6-40 arylene group derived from polyhydroxy aromatic compound; B is C6-40 arylene group or C4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof; X+ is H+, NH4+, primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, or quaternary ammonium ion, T is hydrogen atom, C1-10 alkyl group or C6-40 aryl group that may be substituted with halogen group, hydroxy group, nitro group, amino group, carboxylate ester group, nitrile group, or combination thereof as substituent, or C4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof, B and T may form C4-40 ring together with carbon atom to which they are bonded.

Abstract: There is provided a composition for forming a resist underlayer film which has high dry-etching resistance and wiggling resistance, and achieves excellent planarizing properties for a semiconductor substrate surface having level differences or irregular portions. A resist underlayer film-forming composition including a phenol novolac resin that is obtained by causing a compound that has at least three phenolic groups, in which each of the phenolic groups has a structure bonded to a tertiary carbon atom or has a structure bonded to a quaternary carbon atom to which a methyl group binds, to react with an aromatic aldehyde or an aromatic ketone in the presence of an acid catalyst.

Abstract: An image processing device includes: a determining unit configured to determine, in accordance with two images corresponding to temporally adjacent image data input from an external device, whether or not a field area at a time of imaging has been changed; and a suppressing unit configured to generate and output suppressed image data with an amount of visually recognizable information included in the images being suppressed by performing image processing of reducing at least one of a contrast and a chroma of the images at a time the determining unit determines that the field area at the time of imaging has been changed.

Abstract: A composition for forming a resist underlayer film having heat resistance, which is used for a lithography process of semiconductor device production. A resist underlayer film forming composition including a polymer having a unit structure of Formula (1): Preferably, both rings A and B are benzene rings, n1, n2, and n3 are 0, R4 and R6 are hydrogen atoms, or R5 is naphthyl. A method for producing a semiconductor device including: forming an underlayer film by use of the resist underlayer film forming composition onto a semiconductor substrate; forming a hard mask on the underlayer film; forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask using the resist pattern; etching the underlayer film by use of the patterned hard mask; and processing the semiconductor substrate by use of the patterned underlayer film.

Abstract: A composition for forming a resist underlayer film having heat resistance, which is used for a lithography process of semiconductor device production. A resist underlayer film forming composition including a polymer having a unit structure of Formula (1): Preferably, both rings A and B are benzene rings, n1, n2, and n3 are 0, R4 and R6 are hydrogen atoms, or R5 is naphthyl. A method for producing a semiconductor device including: forming an underlayer film by use of the resist underlayer film forming composition onto a semiconductor substrate; forming a hard mask on the underlayer film; forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask using the resist pattern; etching the underlayer film by use of the patterned hard mask; and processing the semiconductor substrate by use of the patterned underlayer film.