Abstract: A semiconductor device includes a gate electrode, a semiconductor film, and a conductive film. The semiconductor film includes an oxide semiconductor material. The semiconductor film includes a channel region, a low-resistance region, and an intermediate region. The channel region is opposed to the gate electrode. The low-resistance region has a lower electric resistance than the channel region. The intermediate region is provided between the low-resistance region and the channel region. The conductive film is provided selectively in contact with the low-resistance region of the semiconductor film.

Abstract: A semiconductor device includes a base, a first wiring line, a semiconductor film, a second wiring line, an insulating film, and a semiconductor auxiliary layer. The first wiring line is provided in the first, second, and third regions of the base. The semiconductor film has one or more low-resistance regions, is provided between the first wiring line and the base in the first region, and is in contact with the first wiring line in the second region. The second wiring line is in contact with the first wiring line in the third region. The insulating film is provided between the first wiring line and the semiconductor film in the first region. The semiconductor auxiliary layer is in contact with the semiconductor film at least in the first region, and assists electrical coupling via the first region.

Abstract: A semiconductor device includes a gate electrode, a semiconductor film, and a conductive film. The semiconductor film includes an oxide semiconductor material. The semiconductor film includes a channel region, a low-resistance region, and an intermediate region. The channel region is opposed to the gate electrode. The low-resistance region has a lower electric resistance than the channel region. The intermediate region is provided between the low-resistance region and the channel region. The conductive film is provided selectively in contact with the low-resistance region of the semiconductor film.

Abstract: A semiconductor device includes a base, a first wiring line, a semiconductor film, a second wiring line, an insulating film, and a semiconductor auxiliary layer. The first wiring line is provided in the first, second, and third regions of the base. The semiconductor film has one or more low-resistance regions, is provided between the first wiring line and the base in the first region, and is in contact with the first wiring line in the second region. The second wiring line is in contact with the first wiring line in the third region. The insulating film is provided between the first wiring line and the semiconductor film in the first region. The semiconductor auxiliary layer is in contact with the semiconductor film at least in the first region, and assists electrical coupling via the first region.

Abstract: A thin-film transistor (TFT) substrate is provided which includes: a substrate; a TFT disposed above the substrate; and a capacitor disposed above the substrate and electrically connected with the TFT, wherein the capacitor includes: a lower electrode layer disposed above the substrate and including an electrically conductive material as a main component; an upper electrode layer disposed above and opposed to the lower electrode layer and including, as a main component, an oxide semiconductor material to which electrical conductivity is given; and a capacitor insulating layer disposed between the lower electrode layer and the upper electrode layer. An extension extending outward from at least a portion of the outer edge of the lower electrode layer in plan view is provided to the lower electrode layer. In plan view, the upper electrode layer covers the lower electrode layer except the extension.

Abstract: A thin-film transistor (TFT) substrate is provided which includes: a substrate; a TFT disposed above the substrate; and a capacitor disposed above the substrate and electrically connected with the TFT, wherein the capacitor includes: a lower electrode layer disposed above the substrate and including an electrically conductive material as a main component; an upper electrode layer disposed above and opposed to the lower electrode layer and including, as a main component, an oxide semiconductor material to which electrical conductivity is given; and a capacitor insulating layer disposed between the lower electrode layer and the upper electrode layer. An extension extending outward from at least a portion of the outer edge of the lower electrode layer in plan view is provided to the lower electrode layer. In plan view, the upper electrode layer covers the lower electrode layer except the extension.

Abstract: There is provided an optical element including first and second substrates that are disposed to face each other; a pair of wall portions that are erected on an inner surface of the first substrate facing the second substrate to be adjacent to each other in a first direction and extend in a second direction different from the first direction; first and second electrodes that are disposed on wall surfaces of the pair of wall portions to be insulated from each other and face each other and are provided to be apart from the first substrate; an insulating film that covers the first and second electrodes; a third electrode that is provided on an inner surface of the second substrate facing the first substrate; and a polar liquid and a non-polar liquid that are sealed between the first substrate and the second substrate and have different refractive indexes.

Abstract: There is provided an optical element including first and second substrates that are disposed to face each other; a pair of wall portions that are erected on an inner surface of the first substrate facing the second substrate to be adjacent to each other in a first direction and extend in a second direction different from the first direction; first and second electrodes that are disposed on wall surfaces of the pair of wall portions to be insulated from each other and face each other and are provided to be apart from the first substrate; an insulating film that covers the first and second electrodes; a third electrode that is provided on an inner surface of the second substrate facing the first substrate; and a polar liquid and a non-polar liquid that are sealed between the first substrate and the second substrate and have different refractive indexes.

Abstract: An optical device includes: an optical device body; a first transparent electrode film deposited on a light incident side; a second transparent electrode film so formed that the first and second transparent electrode films face away from each other; and a first ferroelectric film deposited at least between the first and second transparent electrode films, wherein the first ferroelectric film vibrates in response to a drive voltage applied through the first and second transparent electrode films.

Abstract: A laser processing apparatus includes a support table, a local exhaust device, and a laser light source unit. The support table supports a processing object. The local exhaust device directs laser light into a local exhaust unit in which pressure is locally adjusted over the support table. The laser light source unit outputs the laser light. The local exhaust device is capable of relatively being lifted from the support table by injecting a lift gas to the support table. The processing object includes a multilayer film formed of two or more layers with different materials. An input unit into which reflectance of the processing object is inputted is connected to the laser light source unit.

Abstract: An optical device includes: an optical device body; a first transparent electrode film deposited on a light incident side; a second transparent electrode film so formed that the first and second transparent electrode films face away from each other; and a first ferroelectric film deposited at least between the first and second transparent electrode films, wherein the first ferroelectric film vibrates in response to a drive voltage applied through the first and second transparent electrode films.

Abstract: A method of manufacturing a substrate formed with a plurality of wiring patterns on a base, includes: a first inspection step of identifying a faulty wiring pattern having electric short circuit or disconnection by performing an electric inspection respectively for the plurality of wiring patterns; a second inspection step of examining a relative position of a defect on the base and at least one of a type and a size of the defect by an optical inspection; a matching step of matching a result of the first inspection step with a result of the second inspection step, and identifying a critical defect having electric short circuit or disconnection; and a third inspection step of examining a relative position in a pixel and an effective range of the critical defect by an optical inspection.

Abstract: A method of manufacturing a display device is provided, in which interlayer short formed in a capacitor in a wiring board or in an intersection between wiring lines may be repaired, and a display device is provided. A method of manufacturing a display device comprising steps of: forming a wiring board having a lower conductive film, an insulating film and an upper conductive film in order on a substrate; repairing interlayer short being short between the upper conductive film and the lower conductive film; and forming display elements on the wiring board. Laser light having a pulse width of 10 picoseconds or less is irradiated to a short-included region including the interlayer short in the step of repairing the interlayer short in order to remove at least the upper conductive film between the lower conductive film, the insulating film and the upper conductive film within the short-included region.

Abstract: A method of manufacturing a substrate formed with a plurality of wiring patterns on a base, includes: a first inspection step of identifying a faulty wiring pattern having electric short circuit or disconnection by performing an electric inspection respectively for the plurality of wiring patterns; a second inspection step of examining a relative position of a defect on the base and at least one of a type and a size of the defect by an optical inspection; a matching step of matching a result of the first inspection step with a result of the second inspection step, and identifying a critical defect having electric short circuit or disconnection; and a third inspection step of examining a relative position in a pixel and an effective range of the critical defect by an optical inspection.

Abstract: A laser processing apparatus includes a support table, a local exhaust device, and a laser light source unit. The support table supports a processing object. The local exhaust device directs laser light into a local exhaust unit in which pressure is locally adjusted over the support table. The laser light source unit outputs the laser light. The local exhaust device is capable of relatively being lifted from the support table by injecting a lift gas to the support table. The processing object includes a multilayer film formed of two or more layers with different materials. An input unit into which reflectance of the processing object is inputted is connected to the laser light source unit.

Abstract: An optical device is provided. The optical device including an optical member having a first main surface and a second main surface, which respectively serve as an entrance surface and an exit surface for light from a directional light source, and made of a material having a refractive index greater than 1; and a support member at least including swing means for the optical member, wherein the first and second main surfaces of the optical member swingable by the support member are able to be inclined with respect to an optical path of the light from the directional light source.