Abstract: A near-field exposure mask includes a mask base material and a light blocking layer formed on the base material, the light blocking layer includes a fine metal structure or fine opening formed in the light blocking layer. The size of the metal structure or the size of the opening is not more than a wavelength of light for exposure, and at least one of a cross section of the fine metal structure in a direction perpendicular to a surface of the mask, and a cross section of the fine opening in a direction perpendicular to the mask surface has an asymmetrical sectional shape with respect to an arbitrary axis perpendicular to the mask surface.

Abstract: Disclosed is a method and apparatus for detecting a relative positional deviation between first and second objects. In one preferred form of the invention, the detecting method includes the steps of (i) providing the first and second objects with diffraction gratings, respectively, each having a grating pitch larger than a wavelength of a light source used, (ii) placing the first and second objects so that a dielectric material layer having a thickness smaller than the wavelength of the light source used is interposed between the first and second objects, and so that the diffraction gratings of the first and second objects are opposed to each other, (iii) projecting light from the light source onto the diffraction gratings of the first and second objects, and (iv) detecting the relative positional deviation between the first and second objects on the basis of diffraction light projected from the diffraction gratings to a space.

Abstract: A near-field photomask includes a light shield film having openings to constitute a light shield portion. The photomask can be used to expose an exposure target with near-field light generated through the openings. The openings formed in the light shield film include two or more parallel rows of first slit openings each having a width smaller than 100 nm, and two or more parallel rows of second slit openings each having a width smaller than 100 nm, which extend perpendicularly to the rows of first slit openings while interlinking at least two of the rows of first slit openings. A near-field exposure apparatus includes the near-field photomask with a positioning unit and a source for illuminating polarized light parallel to the first slit openings for forming a latent-dot-image on an exposure target only where a second slit opening crosses the light shield portion on the near-field photomak.

Abstract: Disclosed is an exposure apparatus, an exposure method and an exposure mask, for improved optical lithography. Specifically, in accordance with one preferred form of the invention, the exposure apparatus is arranged to be used with an exposure mask having an elastically deformable holding member and a light blocking film provided on the holding member and being formed with an opening pattern, wherein for exposure the exposure mask is flexed to be brought into contact with an object to be exposed. The exposure apparatus includes a distance detecting system for detecting a distance between the exposure mask before being flexed and the object to be exposed, and a distance controlling system for controlling the distance between the exposure mask before being flexed and the object to be exposed, on the basis of a signal from the distance detecting system.

Abstract: A near-field photoresist for formation of a fine pattern with by near-field exposure includes an alkali-soluble novalac resin, a diazyde-type photosensitizer which is photoreactive by near-field exposure, a photoacid generator which generates acid by the near-field exposure, and a solvent.

Abstract: Disclosed is a near-field exposure method including a process of bringing a light blocking film with a plurality of small openings each having an opening width not greater than a wavelength of exposure light, into close contact with a photoresist layer provided on a surface of a substrate, and a process of projecting exposure light from an exposure light source to the light blocking film to transfer an opening pattern of the light blocking film to the photoresist layer, wherein, on the basis of a correlation between (a) a distance from a node of a standing wave to be produced in the photoresist layer to the light blocking film and (b) a light intensity distribution of near-field light to be produced in the photoresist layer adjacent the light blocking film, the distance from the standing wave node to the light blocking film is determined so as to provide a desired light intensity distribution.

Abstract: An exposure method for exposing a workpiece on the basis of near-field light escaping from an opening of a mask. The method includes projecting non-polarized exposure light having a predetermined wavelength, emitted from a laser light source and passed through a depolarization device and a diffusion device, onto an exposure mask having a light blocking film formed with a plurality of rectangular openings therein, the openings having (i) a width in a widthwise direction not greater than one-third of the wavelength of the exposure light and (ii) two or more lengthwise directions extending along the mask surface, so that near-field light escaping from the openings performs exposure of a pattern on the basis of the openings.

Abstract: A near-field exposure apparatus including a light source, a stage on which an object to be exposed to light is placed, and a photomask with a deformable membrane portion having on a first surface a light shielding membrane that has a micro aperture and a substrate for supporting a peripheral region of a second surface of the deformable membrane portion. Exposure is conducted with the deformable membrane portion in a sagged condition. The photomask has a stress relieving structure to relieve stress that is generated at a border between the deformable membrane portion and the substrate when the deformable membrane portion sags. The stress relieving structure is one of: a reinforcing member placed at the border, the substrate being partially thinned near the border, and an intermediate layer that is formed between the substrate and the second surface of the deformable membrane portion.

Abstract: A probe for detecting light or irradiating light comprises a cantilever supported at an end thereof by a substrate, a hollow tip formed at a free end of the cantilever, a microaperture formed at the end of the tip, and a hollow waveguide formed inside the cantilever. A method for producing a probe for light detection or light irradiation which comprises the steps of working a substrate to form a groove therein, forming a flat plate-shaped cover portion on the groove to form a hollow waveguide having an opening in a part thereof, forming a hollow tip having a microaperture on the opening, and removing a part of the substrate by etching, to form a cantilever.

Abstract: A method for exposing a workpiece on the basis of near-field light escaping from an exposure mask having a light blocking film with a plurality of rectangular openings. The method includes protecting non-polarized near-field exposure light from a light source through the openings of the exposure mask to perform exposure of a pattern on the workpiece. The widths of the rectangular openings are smaller than that at a cross-point between a first curve on a coordinate of widths of the openings versus a near-field light intensity for an incident-light electric-field direction perpendicular to a lengthwise direction of a small-opening pattern and a second curve on the same coordinate for an incident-light electric-field direction parallel to the lengthwise direction of the small-opening pattern.

Abstract: An apparatus for forming a pattern by using a photomask including both a minute aperture where a main component of a transmitted light is an evanescent light and an aperture where a main component of a transmitted light is a propagating light. The apparatus includes a sample stand for placing a substrate to be processed on which a photoresist with a film thickness equal to or smaller than a width of the minute aperture is formed, a stage for placing the photomask, a light source for generating light for exposure, and a device for controlling a distance between the substrate to be processed and the photomask.

Abstract: A device for detecting a target substance in a fluid is provided. This device comprises a periodic structure having a vacant portion for passing the fluid containing the target substance and a solid portion arranged regularly and capable of transmitting an electromagnetic wave, an electro-magnetic wave-projecting means for projecting the electromagnetic wave to the periodic structure, and a detecting means for measuring the magnetic wave emitted from the periodic structure to detect a change in periodic distribution of a refractive index. This sensor is highly sensitive in a small size.

Abstract: An alignment method for an exposure mask and an object to be exposed, wherein exposure is carried out while the exposure mask having a light blocking film formed at a membrane portion thereof is closely contacted to the object to be exposed and light from a light source is projected to the object to be exposed, through the exposure mask, and wherein alignment of the exposure mask and the object to be exposed is carried out prior to the exposure, the method comprising the steps of preparing an exposure mask having a light blocking film provided on a base material constituting the membrane portion and having a structure for performing position detection, flexing the membrane portion and detecting, by use of the structure, a relative position of the exposure mask and the object to be exposed, in a state in which the exposure mask is contacted to the object to be exposed, and aligning the exposure mask and the object to be exposed, with each other, on the basis of a result of the position detection.

Abstract: An exposure apparatus includes a light-emitting portion arranged so as to be opposite to a photosensitive member at a position for exposure. A part of the light-emitting portion is smaller in width than a wavelength of light from the light-emitting portion.

Abstract: Disclosed is an exposure method and apparatus, an exposure mask and a device manufacturing method, wherein a first surface of a light blocking member having a plurality of openings formed in a mutually adjoining relation is placed at an exposure object side, and light is projected to the light blocking member from its second surface side so that exposure of the exposure object is carried out on the basis of near field light leaking from the openings. For exposure, interference is caused between surface plasmon polariton waves passing respectively through adjacent openings and going around to the first surface side, and, on the basis of it, a portion having a decreased light intensity is produced in the exposure object so that the exposure is carried out by use of the decreased light intensity portion.

Abstract: A chemical sensor for detecting a reaction of a sensor material with a specimen on the basis of an intensity of a surface plasmon polariton wave propagated along a surface of a sensor medium including the sensor material is principally constituted by the sensor medium. The sensor medium includes a periodic structure and the sensor material disposed on the periodic structure. The periodic structure has a pitch substantially equal to an integral multiple of a wavelength of the surface plasma polariton wave generated by irradiating an interface between the periodic structure and the sensor material with light.

Abstract: A probe for detecting light or irradiating light comprises a cantilever supported at an end thereof by a substrate, a hollow tip formed at a free end of the cantilever, a microaperture formed at the end of the tip, and a hollow waveguide formed inside the cantilever. A method for producing a probe for light detection or light irradiation which comprises the steps of working a substrate to form a groove therein, forming a flat plate-shaped cover portion on the groove to form a hollow waveguide having an opening in a part thereof, forming a hollow tip having a microaperture on the opening, and removing a part of the substrate by etching, to form a cantilever.

Abstract: A near-field photoresist for formation of a fine pattern with by near-field exposure includes an alkali-soluble novalac resin, a diazyde-type photosensitizer which is photoreactive by near-field exposure, a photoacid generator which generates acid by the near-field exposure, and a solvent.

Abstract: A near-field photoresist for formation of a fine pattern with by near-field exposure includes an alkali-soluble novalac resin, a diazyde-type photosensitizer which is photoreactive by near-field exposure, a photoacid generator which generates acid by the near-field exposure, and a solvent.

Abstract: A near-field light exposure mask provided with a plurality of apertures each having a width smaller than the wavelength of light used for exposure. In the mask described above, among the plurality of apertures, apertures adjacent to each other are disposed at a necessary distance so that near-field light effused from one of the apertures adjacent to each other does not overlap that generated from the other aperture.