Abstract: A method and apparatus for producing a Group III nitride in which the thermal decomposition of the nitrogen element-containing gas is suppressed to enhance the productivity. The method for producing a Group III nitride crystal, comprising: reacting an oxide or a metal of a Group III element under a heated atmosphere to form a compound gas of the Group III element; mixing a nitrogen element-containing gas at a temperature that is lower than that of the compound gas, with the compound gas; and reacting the nitrogen element-containing gas with the compound gas to form a Group III nitride crystal.

Abstract: Apparatus and method for producing a Group III nitride crystal are to be provided. The apparatus for producing a Group III nitride crystal, contains: a chamber; a nitrogen element-containing gas supplying port for supplying a nitrogen element-containing gas to the chamber; a compound gas supplying port for supplying a compound gas of the Group III element to the chamber, so as to mix the compound gas with the nitrogen element-containing gas; a discharging port for discharging the compound gas and the nitrogen element-containing gas thus mixed, outside the chamber; a holder for holding a seed substrate at a position that is on a downstream side of a mixing point of the compound gas and the nitrogen element-containing gas and is an upstream side of the discharging port; a first heater for heating the seed substrate; and a second heater for heating a space between the mixing point and the seed substrate to a temperature that is higher than a temperature heated by the first heater.

Abstract: A method and apparatus for producing a Group III nitride in which the thermal decomposition of the nitrogen element-containing gas is suppressed to enhance the productivity. The method for producing a Group III nitride crystal, comprising: reacting an oxide or a metal of a Group III element under a heated atmosphere to form a compound gas of the Group III element; mixing a nitrogen element-containing gas at a temperature that is lower than that of the compound gas, with the compound gas; and reacting the nitrogen element-containing gas with the compound gas to form a Group III nitride crystal.

Abstract: An electronic module 10 includes: a circuit board 12 having a first surface and a second surface opposite the first surface; and a plurality of electronic components 14 mounted thereon. The electronic components 14 are sealed at the first surface of the circuit board 12, with a mold body 16 composed of a resin composition. A shield layer 28 is formed on the surface of the mold body 16. The glass transition temperature of a resin included in the mold body 16 is higher than the glass transition temperatures of resins included in the circuit board 12 and the shield layer 28, respectively. The modulus of elasticity of the mold body at 25° C. is 10 to 18 GPa, and the thickness of the circuit board is 0.3 to 1.0 mm.

Abstract: A manufacturing method for a mounting structure of a semiconductor package component, including: applying a first adhesive with viscosity ?1 and a thixotropy index T1 at a position on the substrate, which is on an outer side of the mounted semiconductor package component; applying, on the first adhesive, a second adhesive with viscosity ?2 and a thixotropy index T2 so that the second adhesive gets in contact with an outer periphery part of the semiconductor package component; and forming, through a subsequent reflow process, a first adhesive part of the hardened first adhesive and a second adhesive part of the hardened second adhesive, wherein the first and second adhesives satisfy 30??2??1?300 (Pa·s) and 3?T2?T1?7, and sectional area S1 of the first adhesive part and sectional area S2 of the second adhesive part with respect to a direction perpendicular to a mounting surface of the substrate satisfy a relation S1?S2.

Abstract: A quartz crucible for growing silicon single crystal comprises a crucible body made of a quartz material and a coating layer of a pure silicon which is formed on an inner wall of the crucible body and has purity equivalent to a silicon material that is to be filled into the crucible body. The pure silicon of the coating layer melts together with a silicon material filled in the quartz crucible.

Abstract: A surface mount adhesive includes an epoxy resin, a curing agent, an accelerator, a first filler, and a second filler. The second filler has a specific gravity 1.1 to 3 times that of the first filler, and the second filler has a hardness higher than that of the first filler. The first filler has a largest particle size of 1 to 100 ?m, and the second filler has a largest particle size of 1 to 100 ?m, a specific gravity of 1.7 to 4.5, and a revised Mohs hardness of 2 to 12. The weight ratio of the first filler to the second filler is from 1:3 to 3:1, and the surface mount adhesive has a specific gravity of 1.2 to 1.5. When the surface mount adhesive is dispensed, dispensing failures are suppressed, and dispensing stability is improved.

Abstract: A package structure includes a first printed wiring board having mounted on a top surface a plurality of electronic components including at least one first electronic component, a second printed wiring board stacked on the top surface side of the first printed wiring board, and a plurality of connecting members for mechanically connecting the first and second printed wiring boards while maintaining a constant gap therebetween, the connecting members including a first cured resin for bonding a top surface of the at least one first electronic component to a bottom surface of the second printed wiring board.

Abstract: A manufacturing method for a mounting structure of a semiconductor package component, including: applying a first adhesive with viscosity ?1 and a thixotropy index T1 at a position on the substrate, which is on an outer side of the mounted semiconductor package component; applying, on the first adhesive, a second adhesive with viscosity ?2 and a thixotropy index T2 so that the second adhesive gets in contact with an outer periphery part of the semiconductor package component; and forming, through a subsequent reflow process, a first adhesive part of the hardened first adhesive and a second adhesive part of the hardened second adhesive, wherein the first and second adhesives satisfy 30??2??1?300 (Pa·s) and 3?T2?T1?7, and sectional area S1 of the first adhesive part and sectional area S2 of the second adhesive part with respect to a direction perpendicular to a mounting surface of the substrate satisfy a relation S1?S2.

Abstract: A mounting structure formed by bonding the electrodes of a substantially planar electronic component to the electrodes provided on the mounting surface of a circuit board includes a sealing body 5 formed between one main surface of the electronic component and the circuit board and/or on the other main surface of the electronic component. The sealing body 5 is composed of a plurality of layers having different adhesive strengths and thermal conductivities, wherein a layer having a relatively high adhesion strength is arranged in a region being in contact with either one of the electronic component and the circuit board, and a layer having a relatively high thermal conductivity is arranged in a region being in contact with none of the electronic component and the circuit board.

Abstract: An electronic module 10 includes: a circuit board 12 having a first surface and a second surface opposite the first surface; and a plurality of electronic components 14 mounted thereon. The electronic components 14 are sealed at the first surface of the circuit board 12, with a mold body 16 composed of a resin composition. A shield layer 28 is formed on the surface of the mold body 16. The glass transition temperature of a resin included in the mold body 16 is higher than the glass transition temperatures of resins included in the circuit board 12 and the shield layer 28, respectively. The modulus of elasticity of the mold body at 25° C. is 10 to 18 GPa, and the thickness of the circuit board is 0.3 to 1.0 mm.

Abstract: A package structure includes a first printed wiring board having mounted on a top surface a plurality of electronic components including at least one first electronic component, a second printed wiring board stacked on the top surface side of the first printed wiring board, and a plurality of connecting members for mechanically connecting the first and second printed wiring boards while maintaining a constant gap therebetween, the connecting members including a first cured resin for bonding a top surface of the at least one first electronic component to a bottom surface of the second printed wiring board.

Abstract: A mounting structure formed by bonding the electrodes of a substantially planar electronic component to the electrodes provided on the mounting surface of a circuit board includes a sealing body 5 formed between one main surface of the electronic component and the circuit board and/or on the other main surface of the electronic component. The sealing body 5 is composed of a plurality of layers having different adhesive strengths and thermal conductivities, wherein a layer having a relatively high adhesion strength is arranged in a region being in contact with either one of the electronic component and the circuit board, and a layer having a relatively high thermal conductivity is arranged in a region being in contact with none of the electronic component and the circuit board.

Abstract: A surface mount adhesive includes an epoxy resin, a curing agent, an accelerator, a first filler, and a second filler. The second filler has a specific gravity 1.1 to 3 times that of the first filler, and the second filler has a hardness higher than that of the first filler. The first filler has a largest particle size of 1 to 100 ?m, and the second filler has a largest particle size of 1 to 100 ?m, a specific gravity of 1.7 to 4.5, and a revised Mohs hardness of to 12. The weight ratio of the first filler to the second filler is from 1:3 to 3:1, and the surface mount adhesive has a specific gravity of 1.2 to 1.5. When the surface mount adhesive is dispensed, dispensing failures are suppressed, and dispensing stability is improved.