Abstract: The measuring instrument includes a sensor unit that measures a predetermined physical quantity; an amplifier circuit that amplifies a signal output from the sensor unit; and a linear power supply that supplies power to the amplifier circuit, in which the amplifier circuit includes a first amplifier having a first transistor using a SiC semiconductor, the linear power supply includes a second amplifier having a second transistor using the SiC semiconductor, and noise characteristics of the first amplifier are superior to noise characteristics of the second amplifier.

Abstract: Provided is a SiC semiconductor element equipped with a SiC integrated circuit having a stable characteristic, which operates normally even in a radiation environment. A radiation resistant circuit device includes: a SiC semiconductor element equipped with a SiC integrated circuit, a printed board on which the SiC semiconductor element is provided, a conductive wiring that is arranged inside the printed board and has a predetermined surface facing a bottom surface of a substrate electrode of the SiC integrated circuit, and an insulating material arranged between the bottom surface of the substrate electrode of the SiC integrated circuit and the predetermined surface of the conductive wiring.

Abstract: A semiconductor device includes an electrostatic protection circuit 1 and a MOSFET 2 including a gate terminal. The electrostatic protection circuit 1 includes a positive-side power supply terminal 3, a negative-side power supply terminal 5, a first protection diode 4, a second protection diode 6, a resistance element 7, and a bipolar transistor 8. The second protection diode 6 includes an anode terminal electrically connected to the negative-side power supply terminal 5 via the resistance element 7, and a cathode terminal electrically connected to the gate terminal. The bipolar transistor 8 includes a base terminal, an emitter terminal, and a collector terminal. The bipolar transistor 8 is electrically connected to the anode terminal of the second protection diode 6, the gate terminal, and the positive-side power supply terminal 3. The electrostatic protection circuit 1 is formed on a semiconductor substrate made of silicon carbide.

Abstract: An n type semiconductor layer is formed over an n type semiconductor substrate made of silicon carbide, a p type impurity region is formed in the semiconductor layer, and an n type drain region and an n type source region are formed in the impurity region. A field insulating film having an opening that selectively opens a part of the impurity region located between the drain and source regions is formed over the impurity region and the drain and source regions. A gate insulating film is formed over the impurity region in the opening, and a gate electrode is formed on the gate insulating film. Here, a field relaxation layer having an impurity concentration higher than that of the impurity region is formed in at least a part of the impurity region located between the drain and source regions in plan view and located below the field insulating film.

Abstract: A semiconductor device includes an electrostatic protection circuit 1 and a MOSFET 2 including a gate terminal. The electrostatic protection circuit 1 includes a positive-side power supply terminal 3, a negative-side power supply terminal 5, a first protection diode 4, a second protection diode 6, a resistance element 7, and a bipolar transistor 8. The second protection diode 6 includes an anode terminal electrically connected to the negative-side power supply terminal 5 via the resistance element 7, and a cathode terminal electrically connected to the gate terminal. The bipolar transistor 8 includes a base terminal, an emitter terminal, and a collector terminal. The bipolar transistor 8 is electrically connected to the anode terminal of the second protection diode 6, the gate terminal, and the positive-side power supply terminal 3. The electrostatic protection circuit 1 is formed on a semiconductor substrate made of silicon carbide.

Abstract: A MOSFET that has a drain region and a source region on an upper surface of a semiconductor substrate and a gate electrode that is formed on the semiconductor substrate, and an element separation insulating film that includes an opening portion which exposes an active region, on the semiconductor substrate, are formed. At this point, a gate leading-out interconnection that overlaps the element separation insulating film when viewed from above, and that is integrally combined with the gate electrode is formed in a position where the gate leading-out interconnection does not extend over a distance between both the drain region and the source region when viewed from above, on a region that is exposed from the gate electrode.

Abstract: Provided is a SiC semiconductor element equipped with a SiC integrated circuit having a stable characteristic, which operates normally even in a radiation environment. A radiation resistant circuit device includes: a SiC semiconductor element equipped with a SiC integrated circuit, a printed board on which the SiC semiconductor element is provided, a conductive wiring that is arranged inside the printed board and has a predetermined surface facing a bottom surface of a substrate electrode of the SiC integrated circuit, and an insulating material arranged between the bottom surface of the substrate electrode of the SiC integrated circuit and the predetermined surface of the conductive wiring.

Abstract: An n type semiconductor layer is formed over an n type semiconductor substrate made of silicon carbide, a p type impurity region is formed in the semiconductor layer, and an n type drain region and an n type source region are formed in the impurity region. A field insulating film having an opening that selectively opens a part of the impurity region located between the drain and source regions is formed over the impurity region and the drain and source regions. A gate insulating film is formed over the impurity region in the opening, and a gate electrode is formed on the gate insulating film. Here, a field relaxation layer having an impurity concentration higher than that of the impurity region is formed in at least a part of the impurity region located between the drain and source regions in plan view and located below the field insulating film.

Abstract: A MOSFET that has a drain region and a source region on an upper surface of a semiconductor substrate and a gate electrode that is formed on the semiconductor substrate, and an element separation insulating film that includes an opening portion which exposes an active region, on the semiconductor substrate, are formed. At this point, a gate leading-out interconnection that overlaps the element separation insulating film when viewed from above, and that is integrally combined with the gate electrode is formed in a position where the gate leading-out interconnection does not extend over a distance between both the drain region and the source region when viewed from above, on a region that is exposed from the gate electrode.

Abstract: Provided is a pressure transmitter device including: a pressure receiving diaphragm in contact with a measuring fluid; a fill fluid, in contact with an opposite side of the pressure receiving diaphragm to the other side in contact with the measuring fluid, for transferring a pressure received by the pressure receiving diaphragm from the measuring fluid to a sensor disposed at a position apart from the pressure receiving diaphragm; a hydraulic path filled with the fill fluid and connecting the pressure receiving diaphragm and the sensor; and an output circuit for measuring and outputting an absolute pressure of the measuring fluid or a differential pressure between measuring fluids based on the pressure received by the sensor, where a hydrocarbon absorbing material for absorbing hydrocarbon and a hydrogen occlusion material for occluding hydrogen are provided inside the hydraulic path.

Abstract: In a pressure and pressure difference transmitter that seals a sealing liquid for transmitting the pressure inside a pressure leading passage, the pressure and pressure difference transmitter forming a space between a diaphragm and a main body side wall surface, including the pressure leading passage connected to the main body side wall surface, and transmitting the pressure received by the diaphragm to a sensor through the sealing liquid sealed in the space and the pressure leading passage, a hydrogen occluding material for occluding hydrogen atoms of the sealing liquid is disposed at least in the sealing liquid, the main body side wall surface, or a part of a portion from the main body side wall surface to the sensor, with the hydrogen occluding material being formed with an uneven shape on the surface or being attached with a granular hydrogen occluding material.

Abstract: Provided is a pressure transmitter device including: a pressure receiving diaphragm in contact with a measuring fluid; a fill fluid, in contact with an opposite side of the pressure receiving diaphragm to the other side in contact with the measuring fluid, for transferring a pressure received by the pressure receiving diaphragm from the measuring fluid to a sensor disposed at a position apart from the pressure receiving diaphragm; a hydraulic path filled with the fill fluid and connecting the pressure receiving diaphragm and the sensor; and an output circuit for measuring and outputting an absolute pressure of the measuring fluid or a differential pressure between measuring fluids based on the pressure received by the sensor, where a hydrocarbon absorbing material for absorbing hydrocarbon and a hydrogen occlusion material for occluding hydrogen are provided inside the hydraulic path.

Abstract: Hydrogen which has entered into a pressure/differential pressure transmitter from external or internally generated hydrogen and hydrocarbons are converted to air bubbles within pressure guide paths. As a result, the indicated value drifts and an accurate numerical value is not output. A pressure/differential pressure transmitter includes a space formed between a diaphragm and a main body side wall face, pressure guide paths connected to the main body side wall face, a sealed liquid sealed in the space and the pressure guide paths to transmit a pressure received by the diaphragm to a sensor, and a hydrogen absorption material provided at least in the sealed liquid, on the main body side wall face, or in a part of a path between the main body side wall face and the sensor to absorb hydrogen atoms in the sealed liquid.

Abstract: The present invention provides instrumentation equipment for a nuclear power plant in which the formation of bubbles in an impulse line can be surely inhibited and thereby reliability and maintainability are improved for a long period of time. Instrumentation equipment for a nuclear power plant including: a tubular impulse line provided on a site to measure a fluid to be measured in a primary system of a nuclear power plant; a sealed liquid filled within the impulse line; a pressure-sensing diaphragm provided in a state of closing one opening of the impulse line to receive a pressure of the fluid to be measured; a pressure sensor provided on another opening of the impulse line in a state of being exposed to the sealed liquid; and a hydrogen storage material provided within the impulse line.

Abstract: In a pressure and pressure difference transmitter that seals a sealing liquid for transmitting the pressure inside a pressure leading passage, the pressure and pressure difference transmitter forming a space between a diaphragm and a main body side wall surface, including the pressure leading passage connected to the main body side wall surface, and transmitting the pressure received by the diaphragm to a sensor through the sealing liquid sealed in the space and the pressure leading passage, a hydrogen occluding material for occluding hydrogen atoms of the sealing liquid is disposed at least in the sealing liquid, the main body side wall surface, or a part of a portion from the main body side wall surface to the sensor, with the hydrogen occluding material being formed with an uneven shape on the surface or being attached with a granular hydrogen occluding material.

Abstract: A pressure transmitter including tube-like pressure introducing pipes, a sealed-in liquid, the inside of the pressure introducing pipes being filled with the sealed-in liquid, pressure receiving diaphragms for receiving the pressures of measurement fluids, the pressure receiving diaphragms being set up in a state where one-side apertures in the pressure introducing pipes are blocked by the pressure receiving diaphragms, a pressure sensor that is set up in common to the other-side apertures in the pressure introducing pipes in a state where the pressure sensor is exposed to the sealed-in liquid, and hydrogen-permeation prevention layers that are set up on the pressure receiving diaphragms, wherein the pressure transmitter further includes a hydrogen-storage material that is set up inside the pressure introducing pipes.

Abstract: A pressure transmitter including tube-like pressure introducing pipes, a sealed-in liquid, the inside of the pressure introducing pipes being filled with the sealed-in liquid, pressure receiving diaphragms for receiving the pressures of measurement fluids, the pressure receiving diaphragms being set up in a state where one-side apertures in the pressure introducing pipes are blocked by the pressure receiving diaphragms, and a pressure sensor that is set up in common to the other-side apertures in the pressure introducing pipes in a state where the pressure sensor is exposed to the sealed-in liquid, wherein the sealed-in liquid is silicon oil containing phenyl groups, the pressure transmitter further including a hydrogen-storage material that is set up inside the pressure introducing pipes.

Abstract: Hydrogen which has entered into a pressure/differential pressure transmitter from external or internally generated hydrogen and hydrocarbons are converted to air bubbles within pressure guide paths. As a result, the indicated value drifts and an accurate numerical value is not output. A pressure/differential pressure transmitter includes a space formed between a diaphragm and a main body side wall face, pressure guide paths connected to the main body side wall face, a sealed liquid sealed in the space and the pressure guide paths to transmit a pressure received by the diaphragm to a sensor, and a hydrogen absorption material provided at least in the sealed liquid, on the main body side wall face, or in a part of a path between the main body side wall face and the sensor to absorb hydrogen atoms in the sealed liquid.