Abstract: A laminate including a substrate, a silicon-containing resist underlayer film obtained from a silicon-containing resist underlayer film composition that contains a thermally crosslinkable polysiloxane containing any one or more from repeating units represented by formulae (1) to (3) and any one or more from repeating units represented by formulae (4) to (6), and a resist film obtained from a resist composition that contains at least one hypervalent iodine compound selected from a hypervalent iodine compound represented by formula (7), a hypervalent iodine compound represented by formula (8) and a hypervalent iodine compound represented by formula (9), a carboxy group-containing compound, and a solvent, in the listed order. This can provide a laminate that can satisfy both high sensitivity and high resolvability and allow for formation of a fine pattern in photolithography with a high energy line, a process for manufacturing such a laminate, and such a patterning process.

Abstract: The present invention is a composition for forming a silicon-containing resist film contains a polysiloxane containing at least one of any of a repeating unit represented by formula (A-1), a repeating unit represented by formula (A-2), or a substructure represented by formula (A-3): wherein R1 is a monovalent organic group, a halogen atom, a hydroxy group, a sulfo group, a nitro group, or a carboxyl group, functioning as a group eliminated by heat, acid, or base, and R2 and R3 represent a monovalent organic group. The present invention can provide a composition for forming a silicon-containing resist film such that an ultra-fine resist pattern with excellent LWR (line width roughness) and CDU (critical dimension uniformity) can be formed.

Abstract: The present invention is a composition for forming a silicon-containing film, the composition including a condensation-reactive thermally curable silicon-containing material (Sx) being a polysiloxane resin, wherein the material (Sx) has an organic group that forms a diol structure with a plasma treatment, the composition for forming a silicon-containing film has no aromatic ring, and a contact angle of the composition for forming a silicon-containing film after curing and after the plasma treatment relative to pure water is 20 degrees or less. This can provide in a super straight used for inkjet-adaptive planarization: a transparent composition for forming a silicon-containing film that planarizes a contact surface and that provides an appropriate contact angle with a plasma treatment; a method for forming a film using the composition; and a super straight main body using the composition.

Abstract: A composition for forming an organic film, contains: a resin and/or compound (A); a benzenesulfonic acid salt compound (B) represented by the following formula (1), an anion moiety in the formula (1) having a molecular weight of 200 or more, and the compound (B) not containing a perfluoroalkyl group; and a solvent (C). Thus, the composition makes it possible to form a film excellent in coating properties, such as coating defects, film-formability, and filling property results, when used as an organic underlayer film for a multilayer resist, that is also useful as a photoresist material, and that contains a benzenesulfonic acid salt that is not a perfluoroalkyl compound (PFAS); a patterning process using the composition; and a compound suitable for the composition.

Abstract: The present invention is a polyvalent ammonium salt compound having two or more ammonium ions per molecule, the polyvalent ammonium salt compound being represented by the following general formula (A-1). This can provide: a composition for forming a silicon-containing resist underlayer film with which it is possible to form a silicon-containing resist underlayer film that has an appropriate etching rate and can improve LWR and CDU in an ultra-fine pattern in a multilayer resist method; a polyvalent ammonium salt compound to be contained in the composition; and a patterning process using the composition.

Abstract: The present invention is a silicon-containing sulfonium salt compound represented by the following general formula (A-1). The present invention provides: a composition for forming a silicon-containing resist underlayer film capable of forming a silicon-containing resist underlayer film that has an appropriate etching rate in multilayer resist method and can improve LWR and CDU of an ultrafine pattern; a silicon-containing sulfonium salt compound contained in the composition; and a patterning process using the composition.

Abstract: The present invention is a composition for forming a silicon-containing anti-reflective film, including: a silicon-containing polymer (A); an organic polymer (B); and an organic solvent (C), wherein the silicon-containing polymer (A) includes any one selected from a polysiloxane, a polycarbosilane, and a polysilane, and the organic polymer (B) includes two or more hydroxy groups in a repeating unit structure of the polymer, and includes no silicon. This can provide: a composition for forming a silicon-containing anti-reflective film and a patterning method for forming a silicon-containing anti-reflective film that has both an excellent anti-reflective function and good process selectivity in dry etching in fine patterning process in the semiconductor device producing process.

Abstract: The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3): where R1 represents an iodine-containing organic group; and R2 and R3 are each independently identical to R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.

Abstract: The present invention is a patterning process including the steps of: providing an organic underlayer film, a silicon-containing hard mask, a silicon-containing antireflective film, and a photoresist film in this order on a substrate to be processed; forming a resist pattern in the photoresist film; forming a hard mask middle layer film pattern; forming an organic underlayer film pattern; and forming a pattern in the substrate to be processed, where the silicon-containing antireflective film is formed using a composition for forming a silicon-containing antireflective film containing a crosslinking agent and a polysiloxane containing any one or more of a repeating unit represented by the following general formula (Sx-1), a repeating unit represented by the following general formula (Sx-2), and a partial structure represented by the following general formula (Sx-3). This provides a patterning process according to which it is possible to form a fine pattern without edge roughness.

Abstract: The present invention is a composition for forming a silicon-containing resist underlayer film, containing a condensation reaction-type thermosetting silicon-containing material (Sx), being a polysiloxane resin, where the material has a non-condensation reactive organic group that reacts with a radical chemical species, the resin includes more than 0 and 70 mol % or less of one or more of a repeating unit represented by the following general formula (Sx-4) and a repeating unit represented by the general formula (Sx-5), and the organic group remains unreacted after a heat-curing reaction of the polysiloxane resin. This provides: a composition for forming a resist underlayer film containing a thermosetting silicon-containing material in photolithography using a high-energy beam, the material improving sensitivity, LWR, and resolution of an upper layer resist and further contributing to the prevention of pattern collapse; and a patterning process using the composition for forming a resist underlayer film.

Abstract: The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3): where R1 represents an iodine-containing organic group; and R2 and R3 are each independently identical to R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.

Abstract: The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3): where R1 represents an iodine-containing organic group; and R2 and R3 are each independently identical to R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.

Abstract: The present invention is a composition for forming a silicon-containing metal hard mask, including: (A) a metal oxide nanoparticle; (B) a thermally crosslinkable polysiloxane (Sx) having no aromatic-ring-containing organic group; and (C) a solvent. This provides a composition for forming a silicon-containing metal hard mask that has a high effect of inhibiting collapse of an ultrafine pattern in a multilayer resist method, that can form a resist pattern having excellent LWR, that has more excellent dry etching resistance and wet removability than a conventional silicon-containing underlayer film material, and that has more excellent filling ability than a conventional metal hard mask material.

Abstract: A thermosetting silicon-containing compound contains one or more of structural units shown by the following general formulae (Sx-1), (Sx-2), and (Sx-3): where R1 represents a monovalent organic group containing both a phenyl group optionally having a substituent and a non-aromatic ring having 3 to 10 carbon atoms; and R2, R3 each represent the R1 or a monovalent organic group having 1 to 30 carbon atoms. Thus, the present invention provides a thermosetting silicon-containing compound usable in a silicon-containing resist underlayer film material capable of achieving contradictory properties of having both alkaline developer resistance and improved solubility in an alkaline stripping liquid containing no hydrogen peroxide.

Abstract: A resist composition comprising a sulfonium compound of specific structure as PAG has excellent lithography performance factors such as minimal defects, high sensitivity, improved LWR and CDU, and is a quite effective resist material for precise micropatterning.

Abstract: The present invention provides a sulfonium salt capable of providing a resist composition having few defects in photolithography where a high energy beam is used as a light source, and excellent in lithography performance by controlling acid diffusion.

Abstract: The present invention provides a silicon-containing compound shown by the following formula (1): wherein R1, R2, R3, R4, R5, and R6 each independently represent a linear, branched, or cyclic alkyl group having 1 to 6 carbon atoms, a phenyl group, a 3,3,3-trifluoropropyl group, or a group shown by —(OSiR7R8)n—OSiR9R10R11; R7, R8, R9, R10, and R11 have the same meanings as R1 to R6; X represents a linear or branched alkylene group having 3 to 7 carbon atoms optionally having an ether group; and “n” is an integer in the range of 0 to 100. This provides a stretchable film that has excellent stretchability and strength, with the film surface having excellent repellency, and a method for forming the same; as well as a urethane resin used for the stretchable film; and a silicon-containing compound to be a material of the urethane resin.

Abstract: A thermosetting silicon-containing compound contains one or more of structural units shown by the following general formulae (Sx-1), (Sx-2), and (Sx-3): where R1 represents a monovalent organic group containing both a phenyl group optionally having a substituent and a non-aromatic ring having 3 to 10 carbon atoms; and R2, R3 each represent the R1 or a monovalent organic group having 1 to 30 carbon atoms. Thus, the present invention provides a thermosetting silicon-containing compound usable in a silicon-containing resist underlayer film material capable of achieving contradictory properties of having both alkaline developer resistance and improved solubility in an alkaline stripping liquid containing no hydrogen peroxide.

Abstract: The present invention provides a silicon-containing compound shown by the following formula (1): wherein R1, R2, R3, R4, R5, and R6 each independently represent a linear, branched, or cyclic alkyl group having 1 to 6 carbon atoms, a phenyl group, a 3,3,3-trifluoropropyl group, or a group shown by —(OSiR7R8)n—OSiR9R10R11; R7, R8, R9, R10, and R11 have the same meanings as R1 to R6; “n” is an integer in the range of 0 to 100; and “A” represents a linear or branched alkylene group having 1 to 6 carbon atoms. This provides a stretchable film that has excellent stretchability and strength, with the film surface having excellent repellency, and a method for forming the same; as well as a urethane resin used for the stretchable film; and a silicon-containing compound to be a material of the urethane resin.

Abstract: The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3): where R1 represents an iodine-containing organic group; and R2 and R3 are each independently identical to R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.