Abstract: The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3): where R1 represents an iodine-containing organic group; and R2 and R3 are each independently identical to R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.

Abstract: The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3): where R1 represents an iodine-containing organic group; and R2 and R3 are each independently identical to R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.

Abstract: The present invention is a composition for forming a silicon-containing metal hard mask, including: (A) a metal oxide nanoparticle; (B) a thermally crosslinkable polysiloxane (Sx) having no aromatic-ring-containing organic group; and (C) a solvent. This provides a composition for forming a silicon-containing metal hard mask that has a high effect of inhibiting collapse of an ultrafine pattern in a multilayer resist method, that can form a resist pattern having excellent LWR, that has more excellent dry etching resistance and wet removability than a conventional silicon-containing underlayer film material, and that has more excellent filling ability than a conventional metal hard mask material.

Abstract: A thermosetting silicon-containing compound contains one or more of structural units shown by the following general formulae (Sx-1), (Sx-2), and (Sx-3): where R1 represents a monovalent organic group containing both a phenyl group optionally having a substituent and a non-aromatic ring having 3 to 10 carbon atoms; and R2, R3 each represent the R1 or a monovalent organic group having 1 to 30 carbon atoms. Thus, the present invention provides a thermosetting silicon-containing compound usable in a silicon-containing resist underlayer film material capable of achieving contradictory properties of having both alkaline developer resistance and improved solubility in an alkaline stripping liquid containing no hydrogen peroxide.

Abstract: A resist composition comprising a sulfonium compound of specific structure as PAG has excellent lithography performance factors such as minimal defects, high sensitivity, improved LWR and CDU, and is a quite effective resist material for precise micropatterning.

Abstract: The present invention provides a sulfonium salt capable of providing a resist composition having few defects in photolithography where a high energy beam is used as a light source, and excellent in lithography performance by controlling acid diffusion.

Abstract: The present invention provides a silicon-containing compound shown by the following formula (1): wherein R1, R2, R3, R4, R5, and R6 each independently represent a linear, branched, or cyclic alkyl group having 1 to 6 carbon atoms, a phenyl group, a 3,3,3-trifluoropropyl group, or a group shown by —(OSiR7R8)n—OSiR9R10R11; R7, R8, R9, R10, and R11 have the same meanings as R1 to R6; X represents a linear or branched alkylene group having 3 to 7 carbon atoms optionally having an ether group; and “n” is an integer in the range of 0 to 100. This provides a stretchable film that has excellent stretchability and strength, with the film surface having excellent repellency, and a method for forming the same; as well as a urethane resin used for the stretchable film; and a silicon-containing compound to be a material of the urethane resin.

Abstract: A thermosetting silicon-containing compound contains one or more of structural units shown by the following general formulae (Sx-1), (Sx-2), and (Sx-3): where R1 represents a monovalent organic group containing both a phenyl group optionally having a substituent and a non-aromatic ring having 3 to 10 carbon atoms; and R2, R3 each represent the R1 or a monovalent organic group having 1 to 30 carbon atoms. Thus, the present invention provides a thermosetting silicon-containing compound usable in a silicon-containing resist underlayer film material capable of achieving contradictory properties of having both alkaline developer resistance and improved solubility in an alkaline stripping liquid containing no hydrogen peroxide.

Abstract: The present invention provides a silicon-containing compound shown by the following formula (1): wherein R1, R2, R3, R4, R5, and R6 each independently represent a linear, branched, or cyclic alkyl group having 1 to 6 carbon atoms, a phenyl group, a 3,3,3-trifluoropropyl group, or a group shown by —(OSiR7R8)n—OSiR9R10R11; R7, R8, R9, R10, and R11 have the same meanings as R1 to R6; “n” is an integer in the range of 0 to 100; and “A” represents a linear or branched alkylene group having 1 to 6 carbon atoms. This provides a stretchable film that has excellent stretchability and strength, with the film surface having excellent repellency, and a method for forming the same; as well as a urethane resin used for the stretchable film; and a silicon-containing compound to be a material of the urethane resin.

Abstract: The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3): where R1 represents an iodine-containing organic group; and R2 and R3 are each independently identical to R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.

Abstract: The present invention provides a method for producing a silicon compound shown by the following general formula (3) through a hydrosilylation reaction between a hydrosilane compound shown by the following general formula (1) and a carbonyl group-containing alicyclic olefin compound shown by the following general formula (2), in which the hydrosilylation reaction takes place while an acidic compound or acidic compound precursor is gradually added in presence of a platinum-based catalyst. This provides a highly-efficient industrial method for producing an industrially useful, hydrolysable silicon compound having an alicyclic structure (particularly a norbornane ring) and a carbonyl group.

Abstract: A patterning process includes: (1) forming on a substrate an organic underlayer film, a silicon-containing middle layer film thereon, and further an upper layer resist film thereon; (2) subjecting the upper layer resist film to exposure and development to form an upper layer resist pattern; (3) transferring the upper layer resist pattern to the silicon-containing middle layer film by dry etching, and further transferring the upper layer resist pattern to the organic underlayer film to form an organic underlayer film pattern; (4) forming an inorganic silicon film by a CVD method or an ALD method; (5) removing a portion of the inorganic silicon film by dry etching to expose an upper portion of the organic underlayer film pattern; and (6) removing the organic underlayer film pattern with a stripping liquid to form an inorganic silicon film pattern. The process can solve problems of poor product performance and yield decrease.

Abstract: The present invention provides a silicon-containing compound shown by the following formula (1): wherein R1, R2, R3, R4, R5, and R6 each independently represent a linear, branched, or cyclic alkyl group having 1 to 6 carbon atoms, a phenyl group, a 3,3,3-trifluoropropyl group, or a group shown by —(OSiR7R8)n—OSiR9R10R11; R7, R8, R9, R10, and R11 have the same meanings as R1 to R6; “n” is an integer in the range of 0 to 100; and “A” represents a linear or branched alkylene group having 1 to 6 carbon atoms. This provides a stretchable film that has excellent stretchability and strength, with the film surface having excellent repellency, and a method for forming the same; as well as a urethane resin used for the stretchable film; and a silicon-containing compound to be a material of the urethane resin.

Abstract: The present invention provides a silicon-containing compound shown by the following formula (1): wherein R1, R2, R3, R4, R5, and R6 each independently represent a linear, branched, or cyclic alkyl group having 1 to 6 carbon atoms, a phenyl group, a 3,3,3-trifluoropropyl group, or a group shown by —(OSiR7R8)n—OSiR9R10R11; R7, R8, R9, R10, and R11 have the same meanings as R1 to R6; X represents a linear or branched alkylene group having 3 to 7 carbon atoms optionally having an ether group; and “n” is an integer in the range of 0 to 100. This provides a stretchable film that hats excellent stretchability and strength, with the film surface having excellent repellency, and a method for forming the same; as well as a urethane resin used for the stretchable film; and a silicon-containing compound to be a material of the urethane resin.

Abstract: A resist composition comprising a sulfonium compound of specific structure as PAG has excellent lithography performance factors such as minimal defects, high sensitivity, improved LWR and CDU, and is a quite effective resist material for precise micropatterning.

Abstract: The present invention provides a sulfonium salt capable of providing a resist composition having few defects in photolithography where a high energy beam is used as a light source, and excellent in lithography performance by controlling acid diffusion.

Abstract: A sulfonium salt containing an acid-eliminatable substituent group which is effective for improving contrast is highly soluble and uniformly dispersible. A resist composition comprising the sulfonium salt as photoacid generator forms a pattern with a high resolution, rectangularity, and reduced LWR.

Abstract: A sulfonium salt containing an acid-eliminatable substituent group which is effective for improving contrast is highly soluble and uniformly dispersible. A resist composition comprising the sulfonium salt as photoacid generator forms a pattern with a high resolution, rectangularity, and reduced LWR.