Abstract: Methods and systems for forming a structure including multiple carbon layers and structures formed using the method or system are disclosed. Exemplary methods include forming a first carbon layer and a second carbon layer, wherein a density and/or other property of the first carbon layer differs from the corresponding property of the second carbon layer.

Abstract: Methods and apparatuses for etching a perimeter of a substrate are disclosed. Exemplary methods and apparatuses can be used to deposit material and selectively etch material at the perimeter of the substrate within the same reaction chamber.

Abstract: A bevel mask for use in plasma CVD apparatus for depositing a more uniform film while preventing film peeling at the edges of the wafer. The bevel mask includes a bulk portion and an edge portion. The bulk portion includes an inner beveled surface or face, and the edge portion extends outward from a bottom section of the inner beveled surface to provide a covering for a peripheral portion of the upper surface of a wafer received on the susceptor, which supports the annular-shaped mask such as upon a ring structure on an upper surface of the susceptor.

Abstract: Methods and systems for forming a structure including multiple carbon layers and structures formed using the methods or systems are disclosed. Exemplary methods include forming a first carbon layer with an initial first flowability and a second carbon layer with an initial second flowability, wherein first flowability is less than second flowability.

Abstract: Examples of a shower plate include a body part of a plate-like conductor having a plurality of through holes, the body part being provided with a surface treated part on at least a part of a lower surface, the surface treated part having been subjected to surface treatment, thereby causing two or more regions having different emissivities to exist on the lower surface, and a flange surrounding the body part.

Abstract: Methods and systems for forming a structure including multiple carbon layers and structures formed using the method or system are disclosed. Exemplary methods include forming a first carbon layer and a second carbon layer, wherein a density and/or other property of the first carbon layer differs from the corresponding property of the second carbon layer.

Abstract: Methods and systems for forming a structure including carbon material and structures formed using the method or system are disclosed. Exemplary methods include providing an inert gas to the reaction chamber for plasma ignition, providing a carbon precursor to the reaction chamber, forming a plasma within the reaction chamber to form an initially viscous carbon material on a surface of the substrate, wherein the initially viscous carbon material becomes carbon material, and treating the carbon material with activated species to form treated carbon material.

Abstract: Examples of a cleaning method includes supplying a cleaning gas into an exhaust duct that provides an exhaust flow passage of a gas supplied to an area above a susceptor, the exhaust duct having a shape surrounding the susceptor in plan view, and activating the cleaning gas to clean an inside of the exhaust duct.

Abstract: Examples of a substrate treatment apparatus includes a chamber, a susceptor provided in the chamber and having an electrode therein, a metal plate facing the susceptor, a plurality of impedance adjusters having different impedances, and a selection device configured to connect one of the plurality of impedance adjusters to the electrode.

Abstract: A method and apparatus for determining a stability of plasma in a plasma processing apparatus for performing a plasma processing by converting into plasma a processing gas supplied into a processing container. The method includes: detecting a light emission intensity of the plasma in the processing container while the plasma is generated in the processing container; generating a first function representing a relationship between time and the light emission intensity from a detection result of the light emission intensity; differentiating the first function with time to calculate a differential value, and generating a second function from a relationship between an absolute value of the differential value and time; and integrating the second function with time to calculate an integral value, and determining a stability of the plasma based on the calculated integral value. A related apparatus is also provided.

Abstract: A method and apparatus for determining a stability of plasma in a plasma processing apparatus for performing a plasma processing by converting into plasma a processing gas supplied into a processing container. The method includes: detecting a light emission intensity of the plasma in the processing container while the plasma is generated in the processing container; generating a first function representing a relationship between time and the light emission intensity from a detection result of the light emission intensity; differentiating the first function with time to calculate a differential value, and generating a second function from a relationship between an absolute value of the differential value and time; and integrating the second function with time to calculate an integral value, and determining a stability of the plasma based on the calculated integral value. A related apparatus is also provided.

Abstract: Disclosed is a method for presetting a tuner that matches a power required for plasma emission in a plasma processing apparatus. The method includes: obtaining a relationship of a time lapse from power supply, an emission intensity of plasma, and a setting position of the tuner by emitting plasma; differentiating the emission intensity by time to calculate a time when an increase rate of the emission intensity becomes maximum; and setting the setting position of the tuner at a time, which is obtained by subtracting a time required from the setting of the tuner until the setting is reflected on the emission intensity from the time when the increase rate of the emission intensity becomes maximum, as a preset position.

Abstract: Disclosed is a method of anisotropically etching a transition metal film using a substrate processing apparatus including at least one processing container configured to perform a processing on a workpiece including the transition metal film. The method includes an oxidation step of introducing a first gas containing an oxygen ion into the processing container and irradiating the transition metal film with the oxygen ion to oxidize a transition metal of the transition metal film, thereby forming a metal oxide layer; and a complexation/etching step of introducing a second gas for complexation of the metal oxide layer into the processing container and forming a metal complex in the metal oxide layer, thereby performing an etching.

Abstract: Disclosed is a plasma processing apparatus including: a processing container; and a partition plate made of an insulating material, having a plurality of openings, and configured to partition an inside of the processing container into a plasma generating chamber and a processing chamber. A first conductive member made of a conductive material is provided on a surface of the processing chamber side of the partition plate, and the first conductive member is applied with at least one of an AC voltage, and a DC voltage of a polarity that is opposite to a polarity of charged particles guided from the plasma generating chamber into the processing chamber through each of the openings.

Abstract: Disclosed is a method for presetting a tuner that matches a power required for plasma emission in a plasma processing apparatus. The method includes: obtaining a relationship of a time lapse from power supply, an emission intensity of plasma, and a setting position of the tuner by emitting plasma; differentiating the emission intensity by time to calculate a time when an increase rate of the emission intensity becomes maximum; and setting the setting position of the tuner at a time, which is obtained by subtracting a time required from the setting of the tuner until the setting is reflected on the emission intensity from the time when the increase rate of the emission intensity becomes maximum, as a preset position.