Abstract: A chain antimony oxide fine particle group comprising antimony oxide fine particles which have an average particle diameter of 5 to 50 nm, are connected in the form of a chain and have an average connection number of 2 to 30 and preferably used for forming a hard coating film. The fine particle group can be prepared by a process comprising treating an alkali antimonate aqueous solution with a cation exchange resin to prepare an antimonic acid (gel) dispersion and then treating the dispersion with an anion exchange resin and/or adding a base to the dispersion. Also provided is a substrate with a film comprising a substrate and a hard coating film. The hard coating film includes a chain inorganic oxide fine particle group, in which inorganic oxide fine particles of 2 to 30 on the average are connected in the form of a chain, and a matrix.

Abstract: There is provided an antireflective laminate having a low refractive index and excellent mechanical strength, which comprises a coating layer of an ionizing radiation curing-type resin composition comprising ionizing radiation curing group-containing hollow silica fine particles. The antireflective laminate comprises a light transparent base material and at least a low refractive index layer having a refractive index of not more than 1.45 provided on the light transparent base material, wherein the low refractive index layer comprises an ionizing radiation curing-type resin composition and silica fine particles having an outer shell layer with the interior of the silica fine particles being porous or void, and, for a part or all of the silica fine particles, at least a part of the surface of the silica fine particle has been treated with an ionizing radiation curing group-containing silane coupling agent.

Abstract: Silica-based particles coated with antimony oxide with a low refractive index and having conductivity are provided. The silica-based particles coated with antimony oxide comprise porous or hollow silica-based particles with antimony oxide coated thereon. A refractive index of the silica-based particles coated with antimony oxide is in the range from 1.35 to 1.60 with the volume resistivity value in the range from 10 to 5000 ?/cm and the average particle diameter in the range from 5 to 300 nm, and the thickness of the antimony oxide coating layer is in the range from 0.5 to 30 nm.

Abstract: A chain antimony oxide fine particle group comprising antimony oxide fine particles which have an average particle diameter of 5 to 50 nm, are connected in the form of a chain and have an average connection number of 2 to 30 and preferably used for forming a hard coating film. The fine particle group can be prepared by a process comprising treating an alkali antimonate aqueous solution with a cation exchange resin to prepare an antimonic acid (gel) dispersion and then treating the dispersion with an anion exchange resin and/or adding a base to the dispersion. Also provided is a substrate with a film comprising a substrate and a hard coating film. The hard coating film includes a chain inorganic oxide fine particle group, in which inorganic oxide fine particles of 2 to 30 on the average are connected in the form of a chain, and a matrix.

Abstract: A process for producing semiconductor substrates with a coating film having excellent chemical resistance with high yield and excellent production reliability without any development of cracks and any generation or collection of foreign matter resulting from a projected portion of the coating film, which includes the steps of: (a) forming a coating film by coating an insulating film-forming coating liquid on a substrate mounted on a rotating disc of a spin coater according to a spin coating method; and (b) removing the projected portion of the coating film formed at a periphery of the substrate by ejecting a solvent through a nozzle moving from any point on a line drawn between the periphery edge and a center of the substrate toward the periphery edge while rotating the substrate.

Abstract: The present invention provides a method for forming a silica-containing film with a low-dielectric constant of 3 or less on a semiconductor substrate steadily, which comprises steps of (a) applying a coating liquid for forming the silica-containing film with the low-dielectric constant onto the semiconductor substrate, (b) heating the thus coated film at 50 to 350° C., and then (c) curing the thus treated film at 350 to 450° C. in an inert-gas atmosphere containing 500 to 15,000 ppm by volume of oxygen, and also provides a semiconductor substrate having a silica-containing film formed by the above method. The above step (b) for the thermal treatment is preferably conducted at 150 to 350° C. for 1 to 3 minutes in an air atmosphere. Also, the above curing step (c) is preferably conducted by placing the semiconductor substrate on a hot plate kept at 350 to 450° C.

Abstract: A process for producing semiconductor substrates with a coating film having an excellent chemical resistance with a high yield and an excellent production reliability without any development of cracks and any generation of foreign matters due to a projected portion of the coating film is described, which includes the steps of:

Abstract: The present invention provides a method for forming a silica-containing film with a low-dielectric constant of 3 or less on a semiconductor substrate steadily, which comprises steps of (a) applying a coating liquid for forming the silica-containing film with the low-dielectric constant onto the semiconductor substrate, (b) heating the thus coated film at 50 to 350° C., and then (c) curing the thus treated film at 350 to 450° C. in an inert-gas atmosphere containing 500 to 15,000 ppm by volume of oxygen, and also provides a semiconductor substrate having a silica-containing film formed by the above method.

Abstract: A coating liquid for forming porous silica coating, comprising a product of reaction between a short fiber silica and a hydrolyzate of an alkoxysilane of the formula XnSi(OR)4-n or a halogenated silane of the formula XnSiX′4-n (in the formula, X represents a hydrogen atom, a fluorine atom, an alkyl group having 1 to 8 carbon atoms, an aryl group or a vinyl group; R represents a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, an aryl group or a vinyl group; X′ represents a chlorine atom or a bromine atom; and n is an integer of 0 to 3). A coated substrate comprising a porous silica coating film formed from the above coating liquid for forming porous silica coating. A short fiber silica having an average diameter (D) of 10 to 30 nm, a length (L) of 30 to 100 nm and an aspect ratio (L/D) of 3 to 10.

Abstract: The present invention provides a method of easily planarizing the uneven surface of a substrate having an uneven surface. This method comprises the steps of forming a coating film containing spherical fine particles on a surface of a smooth substrate; sticking the surface of the smooth substrate provided with the coating film containing spherical fine particles to the uneven surface of a substrate having an uneven surface; and transferring the coating film containing spherical fine particles to the uneven surface of the substrate so that the uneven surface is planarized.

Abstract: Disclosed is a thin film-forming apparatus comprising a coating liquid feed means 6 for feeding a thin film-forming coating liquid onto a surface of a transfer roll 2, a transfer means 4 including the transfer roll 2 a surface of which is coated with the thin film-forming coating liquid fed from the coating liquid feed means to form a transfer thin film 8, and a substrate conveying means 16 for continuously conveying a substrate 9 under the transfer roll, a surface of said substrate 9 to be provided with a thin film, wherein the transfer means is so fabricated that the transfer roll surface having the transfer thin film thereon is closely contacted with the surface of the substrate conveyed by the substrate conveying means, to transfer the transfer thin film formed on the transfer roll surface to the substrate surface. Also disclosed is a thin film-forming method using the thin film-forming apparatus.

Abstract: A coating liquid for forming porous silica coating, comprising a product of reaction between a short fiber silica and a hydrolyzate of an alkoxysilane of the formula X.sub.n Si(OR).sub.4-n or a halogenated silane of the formula X.sub.n SiX'.sub.4-n (in the formula, X represents a hydrogen atom, a fluorine atom, an alkyl group having 1 to 8 carbon atoms, an aryl group or a vinyl group; R represents a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, an aryl group or a vinyl group; X' represents a chlorine atom or a bromine atom; and n is an integer of 0 to 3). A coated substrate comprising a porous silica coating film formed from the above coating liquid for forming porous silica coating. A short fiber silica having an average diameter (D) of 10 to 30 nm, a length (L) of 30 to 100 nm and an aspect ratio (L/D) of 3 to 10.