Abstract: In a substrate inverting device, each lower guide has a downward inclined plane that comes in contact with a peripheral edge portion of a substrate held in a horizontal position to support the substrate from below. Each upper guide has an upward inclined plane that comes in contact with the peripheral edge portion of the substrate to catch and hold the substrate between the lower guides and the upper guides. Each lower guide includes first and second lower contact regions that are switched by a switching mechanism and selectively serve as the downward inclined plane. Each upper guide includes first and second upper contact regions that are switched by the switching mechanism and selectively serve as the upward inclined plane. This allows the regions of contact between the upper and lower guides and the substrate in accordance with the state of the substrate.

Abstract: A pair of guide parts of a substrate inverting device comes in contact with the peripheral edge portion of a substrate on both sides in the width direction of the substrate. The switching mechanism changes a state of contact between the pair of guide parts and the substrate by switching the positions of the pair of guide parts between a first contact position and a second contact position. Each of the pair of guide parts has a first contact region and a second contact region. The second contact region is located at a position different in the up-down direction and the width direction from the position of the first contact region. The substrate inverting device is capable of switching regions of the guide parts that come in contact with the substrate between the first contact regions and the second contact regions in accordance with the state of the substrate.

Abstract: A substrate processing apparatus has an inner region surrounded by an outer wall, and the inner region is divided by a first partition wall into first and second substrate transfer regions.

Abstract: A first transfer robot carries a substrate into and out of a container. A second transfer robot receives and delivers the substrate from and to the first transfer robot, and carries the substrate into and out of a first processing portion through a first exit/entrance port. A third transfer robot receives and delivers the substrate from and to the second transfer robot, carries the substrate into and out of a second processing portion through a second exit/entrance port, and carries the substrate into and out of a third processing portion through a third exit/entrance port.

Abstract: The substrate holding/rotating device includes a plurality of movable pins each having a support portion in contact with a peripheral edge portion of the substrate to support the substrate, and a rotation unit which rotates the plurality of movable pins around the rotation axis, a support portion of each of the movable pins included in a first pin group is disposed so as to move between a first hold position included hold positions, the first hold position close to a rotation axis and a second hold position included the hold positions, the second hold position far apart from the first hold position to one in a circumferential direction and also so as to move between the first and second hold positions and an open position far apart from the rotation axis.

Abstract: A top plate when located at a first position is held by an opposing-member holder, and the top plate when located at a second position is held by a substrate holder and rotated along with the substrate holder. In a substrate processing apparatus, a first processing liquid nozzle located at a supply position inside a to-be-held part of the top plate supplies a first processing liquid through an opposing-member opening to a substrate and is moved from the supply position to its retracted position, and a second processing liquid nozzle is moved from its retracted position to the supply position and supplies a second processing liquid through the opposing-member opening to the substrate. This configuration suppresses or prevents mixture of multiple types of processing liquids, as compared with the case where multiple types of processing liquids are sequentially supplied from a single processing liquid nozzle.

Abstract: A substrate processing apparatus includes a heater having an infrared lamp and a housing for heating an upper surface of a substrate held by a substrate holding mechanism with the heater in opposed relation to the upper surface. A heater cleaning method includes locating the heater at a position above a lower nozzle in opposed relation to a first spout of the lower nozzle, the lower nozzle being in opposed relation to a lower surface of the substrate held by the substrate holding mechanism, and a lower cleaning liquid spouting step of supplying a cleaning liquid to the lower nozzle to spout the cleaning liquid upward from the first spout with no substrate being held by the substrate holding mechanism to thereby supply the cleaning liquid to an outer surface of the housing of the heater located at the heater cleaning position.

Abstract: A substrate treatment apparatus is used for treating a major surface of a substrate with a chemical liquid. The substrate treatment apparatus includes: a substrate holding unit which holds the substrate; a chemical liquid supplying unit having a chemical liquid nozzle which supplies the chemical liquid onto the major surface of the substrate held by the substrate holding unit; a heater having an infrared lamp to be located in opposed relation to the major surface of the substrate held by the substrate holding unit to heat the chemical liquid supplied onto the major surface of the substrate by irradiation with infrared radiation emitted from the infrared lamp, the heater having a smaller diameter than the substrate; and a heater moving unit which moves the heater along the major surface of the substrate held by the substrate holding unit.

Abstract: A substrate processing apparatus includes a heater having an infrared lamp and a housing for heating an upper surface of a substrate held by a substrate holding mechanism with the heater in opposed relation to the upper surface. A heater cleaning method includes locating the heater at a position above a lower nozzle in opposed relation to a first spout of the lower nozzle, the lower nozzle being in opposed relation to a lower surface of the substrate held by the substrate holding mechanism, and a lower cleaning liquid spouting step of supplying a cleaning liquid to the lower nozzle to spout the cleaning liquid upward from the first spout with no substrate being held by the substrate holding mechanism to thereby supply the cleaning liquid to an outer surface of the housing of the heater located at the heater cleaning position.

Abstract: A transfer path is provided which is extended so as to be passed on a lateral side of a processing portion that processes a substrate. The substrate transferred between a container held by a holding unit and the processing portion passes through the transfer path. A first transfer robot carries the substrate into and out of the container held by the holding unit, and accesses a reception/delivery region arranged within the transfer path. A second transfer robot receives and delivers the substrate from and to the first transfer robot in the reception/delivery region, and carries the substrate into and out of the processing portion. A second transfer robot raising/lowering unit which raises and lowers the second transfer robot is arranged within the transfer path. The reception/delivery region and the second transfer robot raising/lowering unit are located between the first transfer robot and the second transfer robot.

Abstract: A substrate processing apparatus includes a substrate processing section that processes a plurality of substrates assuming a vertical posture in a batch manner; a first traversing mechanism that laterally moves a first traverse holding portion along a first traversing path between a substrate transfer position and a substrate delivery position; a second traversing mechanism that laterally moves a second traverse holding portion along a second traversing path disposed below the first traversing path between the substrate transfer position and the substrate delivery position; an elevation mechanism that raises and lowers an elevation holding portion in the substrate transfer position; and a main transfer mechanism that conveys a plurality of substrates assuming a vertical posture in a batch manner between the substrate delivery position and the substrate processing section, the first and second traverse holding portions, and the elevation holding portion each holds a plurality of substrates assuming a vertical

Abstract: A substrate processing apparatus has a labyrinth around a processing liquid nozzle above a nozzle gap, and a seal gas is supplied to the labyrinth to seal the nozzle gap from an external space. Consequently, the entry of the atmosphere of the external space into a processing space through the nozzle gap can be suppressed. An opposing-member flange part of a top plate has a first uneven part on the upper surface, and a holder body of an opposing-member moving mechanism has a second uneven part on the lower surface. The labyrinth is formed by raised portions of one of the first and second uneven parts being disposed within recessed portions of the other of the first and second uneven parts with a gap therebetween only when the top plate is located at a second position (i.e., the processing space is created). This achieves flattening of the substrate processing apparatus.

Abstract: In a substrate processing apparatus, chucks and engagement parts are disposed on the upper surface of a holding base part that extends radially outward of a base supporter, and the engagement parts are located radially outward of the chucks. A generally annular lower protruding part extends radially outward from the base supporter below the holding base part. In a cup part, a guard for receiving a processing liquid from a substrate is switched between a first guard and a second guard by a guard moving mechanism moving the first guard in the up-down direction between a liquid receiving position and a retracted position. With the first guard located at the retracted position, the lower protruding part extends toward the inner peripheral edge of a first-guard canopy part. This configuration suppresses the flow of a gas between the first guard and the second guard.

Abstract: A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off a liquid remaining on the substrate, and a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate.

Abstract: A top plate when located at a first position is held by an opposing-member holder, and the top plate when located at a second position is held by a substrate holder and rotated along with the substrate holder. In a substrate processing apparatus, a first processing liquid nozzle located at a supply position inside a to-be-held part of the top plate supplies a first processing liquid through an opposing-member opening to a substrate and is moved from the supply position to its retracted position, and a second processing liquid nozzle is moved from its retracted position to the supply position and supplies a second processing liquid through the opposing-member opening to the substrate. This configuration suppresses or prevents mixture of multiple types of processing liquids, as compared with the case where multiple types of processing liquids are sequentially supplied from a single processing liquid nozzle.

Abstract: A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off the liquid remaining on the substrate, a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate, and a temperature decrease suppressing step of supplying, in parallel to the hydrogen peroxide water supplying step, pure water having high temperature to a lower surface of the substrate.

Abstract: A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off a liquid remaining on the substrate, and a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate.

Abstract: The substrate treatment apparatus includes a first substrate transport robot having a hand which holds a substrate, a second substrate transport robot having a hand which holds the substrate, and a hand cleaning unit which cleans the hand of the first substrate transport robot and the hand of the second substrate transport robot. The hand cleaning unit is configured to be accessible by the hand of the first substrate transport robot and the hand of the second substrate transport robot, and is disposed above or below a substrate transfer place at which the substrate is transferred between the first and second substrate transport robots.

Abstract: A substrate treatment method is provided which includes: a treatment liquid supplying step of supplying a treatment liquid to a major surface of a substrate; a substrate rotating step of rotating the substrate while retaining a liquid film of the treatment liquid on the major surface of the substrate; a heater heating step of locating a heater in opposed relation to the major surface of the substrate to heat the treatment liquid film by the heater in the substrate rotating step; and a heat amount controlling step of controlling the amount of heat to be applied per unit time to a predetermined portion of the liquid film from the heater according to the rotation speed of the substrate in the heater heating step.

Abstract: A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off the liquid remaining on the substrate, a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate, and a temperature decrease suppressing step of supplying, in parallel to the hydrogen peroxide water supplying step, pure water having high temperature to a lower surface of the substrate.