Abstract: A novel bacteriophage having bacteriolytic activity against bacteria of the genus Salmonella, such as S. Enteritidis, and a bacteriolytic agent consisting of the same are provided. The bacteriophage and the bacteriolytic agent including the bacteriophage have a wide host range for bacteria of the genus Salmonella. A host-specific bacteriophage and an effective Salmonella bacteriolytic agent consisting of the same are provided. A bacteriophage capable of effectively controlling S. Typhimurium, and in particular, multidrug-resistant S. Typhimurium, and a bacteriolytic agent consisting of the same are also provided. A bacteriophage having a specific genomic DNA sequence; a Salmonella bacteriolytic agent consisting of the bacteriophage; and a composition comprising the same are provided.

Abstract: An object of the present disclosure is to provide (i) a novel bacteriophage having lytic activity against a Salmonella species such as S. enteritidis or a lytic agent including the same, (ii) a bacteriophage having a broad host range against Salmonella species or a lytic agent including the same, (iii) a host-specific bacteriophage or an effective lytic agent for a Salmonella species including the same, or (iv) a bacteriophage or a lytic agent including the same, capable of effectively controlling S. typhimurium, particularly S. typhimurium having multidrug resistance. The present disclosure provides bacteriophages having specific genomic DNA sequences, lytic agents for Salmonella species including the same, and compositions including the same.

Abstract: A bacteriophage having a wide host range for bacteria of the genus Salmonella is provided. The bacteriophage has bacteriolytic activity against bacteria of the genus Salmonella. The bacteriophage has a genomic DNA sequence comprising a gene encoding a tail tip protein consisting of a specific amino acid sequence. Methods of using the bacteriophage are also provided.

Abstract: A converter includes a first multi-level circuit connected between a first reactor and first to third DC lines, and a second multi-level circuit connected between a second reactor and the first to third DC lines. A controller calculates a first voltage that is a sum of terminal-to-terminal voltages of first and second capacitors, and a second voltage that is a difference between the terminal-to-terminal voltages of the first and second capacitors. When an AC power supply is sound, the controller controls the first and second multi-level circuits such that the first voltage is equal to a reference voltage and the second voltage is eliminated. When the AC power supply has a power failure, the controller controls the first and second multi-level circuits such that the second voltage is eliminated.

Abstract: A power converter includes first and second switching elements connected in series between first and second DC lines, third and fourth switching elements connected in series between the second DC line and a third DC line, an AC terminal, and a multilevel circuit. The multilevel circuit is connected between a first point of connection between the first and second switching elements and a second point of connection between the third and fourth switching elements, and the AC terminal. A filter includes a reactor having a first terminal connected to the AC terminal, and a capacitor connected between a second terminal of the reactor and the second DC line. The multilevel circuit mutually converts a first DC voltage received by the first point of connection and a third DC voltage received by the second point of connection, and a first AC voltage having at least five voltage values.

Abstract: This uninterruptible power supply device includes: a semiconductor switch that is connected between a bypass AC power supply and a load, is turned on when the bypass AC power supply is normal, and is turned off when the bypass AC power supply has a power failure; and an inverter that converts DC power supplied from an AC power supply or a battery into AC power and supplies the AC power to the load when the bypass AC power supply has a power failure, and supplies an assist current to the load if a load current is larger than a threshold current when the bypass AC power supply is normal, the assist current being a difference between the load current and the threshold current. Therefore, even if the load current is increased by load variation, the current flowing through the semiconductor switch can be maintained at the threshold current or lower.

Abstract: A platform of a gas turbine rotor blade according to one embodiment includes a groove portion recessed from an end surface on a trailing edge side toward a leading edge side. A bottom portion of the groove portion overlaps at least a blade-shaped portion when viewed from a radial direction.

Abstract: A platform of a gas turbine rotor blade according to one embodiment includes a groove portion recessed from an end surface on a trailing edge side toward a leading edge side. A bottom portion of the groove portion overlaps at least a blade-shaped portion when viewed from a radial direction.

Abstract: There is provided a TFT substrate that prevents corrosion of a gate electrode and a method for manufacturing the TFT substrate. The TFT substrate comprises a substrate; a gate comprising a gate electrode and a gate wiring, the gate comprising copper and formed on one surface of the substrate; a protection film to cover the gate; an insulation film formed on the protection film; a semiconductor film formed on the insulation film; and a source and a drain formed on the semiconductor film and facing each other with a space therebetween above the gate electrode, wherein the protection film covers entire exposed surface of the gate.

Abstract: There is provided a TFT substrate that prevents corrosion of a gate electrode and a method for manufacturing the TFT substrate. The TFT substrate comprises a substrate; a gate comprising a gate electrode and a gate wiring, the gate comprising copper and formed on one surface of the substrate; a protection film to cover the gate; an insulation film formed on the protection film; a semiconductor film formed on the insulation film; and a source and a drain formed on the semiconductor film and facing each other with a space therebetween above the gate electrode, wherein the protection film covers entire exposed surface of the gate.

Abstract: A liquid crystal layer is disposed on a second glass substrate side between a first glass substrate and a second glass substrate, a first insulating film and a second insulating film are formed in this order on a surface of the first glass substrate that is disposed on the liquid crystal layer side, the outer edge portion of the liquid crystal layer is surrounded by a sealing material, and a slit is formed in a part or the whole of the peripheral edge portion of the second insulating film disposed on a further inner side than a position at which the second insulating film overlaps the sealing material. In addition, a slit formed in a peripheral edge portion of the first insulating film that corresponds to the sealing material is filled with a gate insulating film having a higher barrier property for gas and/or liquid than the first insulating film.

Abstract: A liquid crystal layer is disposed on a second glass substrate side between a first glass substrate and the second glass substrate, a first insulating film and a second insulating film are formed in this order on a surface of the first glass substrate on the liquid crystal layer side, the outer edge portion of the liquid crystal layer is surrounded by a sealing material, and a plurality of TFTs are insulated from each other by the first insulating film and the second insulating film. A gate insulating film included in the second insulating film is so formed as to have a higher barrier property for gas and/or liquid than the first insulating film, and a groove having a bottom formed with the same material as a part of the material for forming the TFT is formed at a part or the whole of a peripheral edge portion of the second insulating film which is located more inside than a position at which the second insulating film overlaps the sealing material.

Abstract: A liquid crystal layer is disposed on a second glass substrate side between a first glass substrate and the second glass substrate, a first insulating film and a second insulating film are formed in this order on a surface of the first glass substrate on the liquid crystal layer side, the outer edge portion of the liquid crystal layer is surrounded by a sealing material, and a plurality of TFTs are insulated from each other by the first insulating film and the second insulating film. A gate insulating film included in the second insulating film is so formed as to have a higher barrier property for gas and/or liquid than the first insulating film, and a groove having a bottom formed with the same material as a part of the material for forming the TFT is formed at a part or the whole of a peripheral edge portion of the second insulating film which is located more inside than a position at which the second insulating film overlaps the sealing material.

Abstract: A liquid crystal layer is disposed on a second glass substrate side between a first glass substrate and a second glass substrate, a first insulating film and a second insulating film are formed in this order on a surface of the first glass substrate that is disposed on the liquid crystal layer side, the outer edge portion of the liquid crystal layer is surrounded by a sealing material, and a slit is formed in a part or the whole of the peripheral edge portion of the second insulating film disposed on a further inner side than a position at which the second insulating film overlaps the sealing material. In addition, a slit formed in a peripheral edge portion of the first insulating film that corresponds to the sealing material is filled with a gate insulating film having a higher barrier property for gas and/or liquid than the first insulating film.