Abstract: Provided are a mask blank, a phase shift mask, and a method of manufacturing a semiconductor device. A mask blank comprises a light-shielding film on a transparent substrate. The light-shielding film is made of a material comprising silicon and nitrogen. An internal region of the light-shielding film has a maximum peak at a binding energy in a range in which a Si2p narrow spectrum obtained by analysis by X-ray photoelectron spectroscopy is more than 100 eV and 101.5 eV or less. The internal region of the light-shielding film is a region obtained by excluding a back surface side region on the transparent substrate side and a front surface side region opposite to the transparent substrate.

Abstract: The present invention relates to: [1] a nonaqueous electrolytic solution containing a compound (A) represented by formula (I); and [2] a nonaqueous electrolytic solution battery including a positive electrode, a negative electrode, and the nonaqueous electrolytic solution.

Abstract: The present invention provides a non-aqueous electrolytic solution which can be handled industrially stably, and which allows for achieving a good durability performance, particularly, a good capacity retention rate during repeated charging and discharging, of an energy device typified by a non-aqueous electrolytic solution secondary battery. The non-aqueous electrolytic solution contains a compound(s) represented by the following general formula(e) (A1) and/or (A2). In formula (A1), X1 represents a halogen atom; each of R1, R2, R5 and R6 independently represents a hydrogen atom, a halogen atom, or a hydrocarbon group having 10 or less carbon atoms optionally substituted with a halogen atom; and each of R3 and R4 independently represents a halogen atom, or a hydrocarbon group having 10 or less carbon atoms optionally substituted with a halogen atom; wherein at least two of R1 to R6 may be bonded to each other to form a ring.

Abstract: According to one embodiment, a storage battery apparatus includes: a plurality of storage battery modules each including a battery module, which includes a plurality of battery cells, and a cell monitoring unit measuring voltages of the battery cells and a temperature of the battery module; and a battery management unit periodically receiving measurement values of the voltages of the battery cells and the temperature of the battery module. When there is interference in communication with the plurality of cell monitoring units, the battery management unit extends a communication cycle with the cell monitoring units, sets a value of a chargeable current and a value of a dischargeable current of the battery module, which correspond to at least the communication cycle.

Abstract: According to one embodiment, a storage battery apparatus comprising: a plurality of storage battery modules, each of which includes a battery module and a first wireless communication module transmitting and receiving a radio wave based on a BLE standard; and a battery management unit which includes a plurality of second wireless communication modules transmitting and receiving a radio wave based on the BLE standard, and an arithmetic processing apparatus controlling operation of the second wireless communication modules, wherein the arithmetic processing apparatus establishes communication between the battery management unit and the storage battery modules in unit of groups each including at least one of the storage battery modules.

Abstract: A light-emitting element has a property that a resistance value (internal resistance) changes in accordance with an environmental temperature. It is an object to downsize a monitoring element which corrects an influence of variations in current value of the light-emitting element, which are caused by an environmental temperature change and a change with time. A pixel includes a plurality of sub-pixels, areas of light-emitting elements provided in the individual sub-pixels are made to be different from each other, and an area of a monitoring element is made to be the same as an area of the light-emitting element in any of the sub-pixels, thereby correcting light-emission of the pixel by the monitoring element.

Abstract: A test circuit and a test method capable of easily and accurately determining the presence or absence of a defect as well as defective points. The test circuit of the invention has a plurality of shift registers, a plurality of latch circuits, a plurality of first NOR circuits, a plurality of second NOR circuits, a plurality of first NAND circuits, a plurality of second NAND circuits, and a plurality of inverters. A plurality of source signal lines provided in a pixel area are connected to the respective plurality of latch circuits, and a test output is outputted from the inverter of the last stage.

Abstract: A light-emitting element has a property that a resistance value (internal resistance) changes in accordance with an environmental temperature. It is an object to downsize a monitoring element which corrects an influence of variations in current value of the light-emitting element, which are caused by an environmental temperature change and a change with time. A pixel includes a plurality of sub-pixels, areas of light-emitting elements provided in the individual sub-pixels are made to be different from each other, and an area of a monitoring element is made to be the same as an area of the light-emitting element in any of the sub-pixels, thereby correcting light-emission of the pixel by the monitoring element.

Abstract: A test circuit and a test method capable of easily and accurately determining the presence or absence of a defect as well as defective points. The test circuit of the invention has a plurality of shift registers, a plurality of latch circuits, a plurality of first NOR circuits, a plurality of second NOR circuits, a plurality of first NAND circuits, a plurality of second NAND circuits, and a plurality of inverters. A plurality of source signal lines provided in a pixel area are connected to the respective plurality of latch circuits, and a test output is outputted from the inverter of the last stage.

Abstract: A semiconductor display device that operates normally at a room temperature may not operate normally at a low temperature. Meanwhile, in semiconductor display devices with the same circuit configuration and the same driving method, the higher the operating frequency is, the better the display quality is. Thus, a semiconductor display device the operating frequency of which is set on the basis of a room temperature may not operate normally at a low temperature. According to the invention, the temperature and the operating state of a semiconductor display device are measured to vary the operating frequency in accordance with the measurement result. More specifically, the operating frequency is decreased at a low temperature to obtain normal operation, while the operating frequency is increased at a room temperature and a high temperature to improve the display quality.