Patents by Inventor Ryo Ohkubo

Ryo Ohkubo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210088895
    Abstract: A mask blank in which a phase shift film provided on a transparent substrate includes at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer contains silicon and nitrogen and the oxygen-containing layer contains silicon and oxygen, wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of a Si2p narrow spectrum and the transparent substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of a Si2p narrow spectrum, the numerical value (PSi_f)/(PSi_s), which is produced by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the transparent substrate, is 1.09 or less.
    Type: Application
    Filed: January 8, 2019
    Publication date: March 25, 2021
    Applicant: HOYA CORPORATION
    Inventors: Hitoshi MAEDA, Ryo OHKUBO, Yasutaka HORIGOME
  • Patent number: 10915016
    Abstract: Provided is a mask blank (100) for manufacturing a phase shift mask.
    Type: Grant
    Filed: October 26, 2016
    Date of Patent: February 9, 2021
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Ryo Ohkubo, Hiroaki Shishido
  • Publication number: 20200409252
    Abstract: Provided is a mask blank for a phase shift mask including an etching stopper film. A mask blank has a structure where a transparent substrate has layered thereon an etching stopper film and a phase shift film in this order, in which the phase shift film contains silicon and oxygen, in which the phase shift film has a refractive index n1 of 1.5 or more for light of 193 nm wavelength and an extinction coefficient k1 of 0.1 or less for light of 193 nm wavelength, in which the etching stopper film has a refractive index n2 of 2.6 or more for light of 193 nm wavelength and an extinction coefficient k2 of 0.4 or less for light of 193 nm wavelength, and the refractive index n2 and the extinction coefficient k2 satisfy at least one of k2?[(?0.188×n2)+0.879] and k2?[(2.75×n2)?6.945].
    Type: Application
    Filed: February 13, 2019
    Publication date: December 31, 2020
    Applicant: HOYA CORPORATION
    Inventors: Kazutake TANIGUCHI, Hitoshi MAEDA, Ryo OHKUBO
  • Patent number: 10693440
    Abstract: An acoustic wave device includes: a first substrate having a first surface on which an acoustic wave element is located; a second substrate having a second surface on which a functional element is located; a third substrate having a third surface, which faces the first and second surfaces, and a fourth surface being opposite to the third surface, a first metal layer separated from the acoustic wave element and a wiring line in the first substrate and connecting the first and third surfaces; a second metal layer separated from the functional element and a wiring line in the second substrate and connecting the second and third surfaces; a first metal pattern located on the third surface, being in contact with the first and second metal layers, and connecting the first and second metal layers; and a terminal located on the fourth surface and electrically connectable to the first metal pattern.
    Type: Grant
    Filed: May 22, 2018
    Date of Patent: June 23, 2020
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Satoru Ohkubo, Kazuyuki Imagawa, Ryo Miyamoto
  • Publication number: 20200150524
    Abstract: A mask blank is provided which comprises a transparent substrate, an etching mask formed on the transparent substrate, and a light shielding film formed on the etching mask film. The mask blank may also include a light-semitransmissive film formed between the transparent substrate and the etching mask film. The etching mask film contains chromium and carbon, and the light shielding film contains chromium and oxygen. A C1s narrow spectrum of the etching mask film as obtained by X-ray photoelectron spectroscopy analysis has a maximum peak at a binding energy of not less than 282 eV and not more than 284 eV.
    Type: Application
    Filed: January 14, 2020
    Publication date: May 14, 2020
    Applicant: HOYA CORPORATION
    Inventors: Osamu NOZAWA, Hiroaki SHISHIDO, Ryo OHKUBO
  • Publication number: 20200064725
    Abstract: A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom % or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.
    Type: Application
    Filed: January 24, 2018
    Publication date: February 27, 2020
    Applicant: HOYA CORPORATION
    Inventors: Osamu NOZAWA, Ryo OHKUBO, Hiroaki SHISHIDO
  • Patent number: 10571797
    Abstract: A mask blank is provided, which makes it possible to form a fine transfer pattern in a light-semitransmissive film with high accuracy even if the light-semitransmissive film is made of a material containing silicon and a light shielding film is made of a material containing chromium. The mask blank 100 has a structure in which the light-semitransmissive film 2, etching mask film 3, and light shielding film 4 are laminated in this order on the transparent substrate 1. It is featured in that the light-semitransmissive film 2 is made of the material containing silicon, the etching mask film 3 is made of the material containing chromium, the light shielding film 4 is made of a material containing chromium and oxygen, and a ratio of the etching rate of the light shielding film 4 to the etching rate of the etching mask film 3 in the dry etching with an oxygen-containing chlorine-based gas is not less than 3 and not more than 12.
    Type: Grant
    Filed: December 24, 2015
    Date of Patent: February 25, 2020
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Hiroaki Shishido, Ryo Ohkubo
  • Patent number: 10527931
    Abstract: A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask.
    Type: Grant
    Filed: September 10, 2018
    Date of Patent: January 7, 2020
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Ryo Ohkubo, Hiroaki Shishido, Yasushi Okubo
  • Patent number: 10481485
    Abstract: A mask blank comprising an etching stopper film. The mask blank comprises a thin film for pattern formation on a main surface of a transparent substrate, and is featured in that: the thin film for pattern formation contains silicon, an etching stopper film is provided between the transparent substrate and the thin film for pattern formation, and the etching stopper film contains silicon, aluminum, and oxygen.
    Type: Grant
    Filed: May 10, 2016
    Date of Patent: November 19, 2019
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Takenori Kajiwara, Ryo Ohkubo
  • Patent number: 10365555
    Abstract: In a mask blank having a structure in which a light-semitransmissive film and a light-shielding film are laminated on a main surface of a transparent substrate, the light-semitransmissive film is made of a material that can be dry-etched with an etching gas containing a fluorine-based gas, the light-shielding film is made of a material that contains tantalum and one or more elements selected from hafnium and zirconium and contains no oxygen except in a surface layer thereof, an etching stopper film is provided between the light-semitransmissive film and the light-shielding film, and the etching stopper film is made of a material that contains chromium with an oxygen content of 20 at % or less.
    Type: Grant
    Filed: May 19, 2014
    Date of Patent: July 30, 2019
    Assignee: HOYA CORPORATION
    Inventors: Hiroaki Shishido, Osamu Nozawa, Ryo Ohkubo
  • Publication number: 20190163047
    Abstract: A mask blank having fast repair rate of EB defect repair and high repair rate ratio to EB defect repair relative to a transparent substrate that includes a phase shift film on a transparent substrate, the phase shift film has a structure including three sets or more of a set of a stacked structure including a high transmitting layer and a low transmitting layer, the high transmitting layer and the low transmitting layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from a metalloid element and a non-metallic element, the high transmitting layer includes 50 atom % or more nitrogen content and has a thickness of 12 nm or less, and the low transmitting layer includes less than 50 atom % nitrogen content and has a thickness less than the high transmitting layer.
    Type: Application
    Filed: June 22, 2017
    Publication date: May 30, 2019
    Applicant: HOYA CORPORATION
    Inventors: Takenori KAJIWARA, Ryo OHKUBO, Hiroaki SHISHIDO, Osamu NOZAWA
  • Publication number: 20190040516
    Abstract: A mask blank having a light-shielding film containing chromium, oxygen, and carbon, and a hard mask film containing one or more of silicon and tantalum. The light shielding film and the hard mask film are provided in this order on a transparent substrate; the light shielding film being (1) a single layer film having a composition gradient portion with increased oxygen content on a surface at a side of the hard mask film and a region close thereto and (2) configured such that a maximum peak of N1s narrow spectrum obtained from X-ray photoelectron spectroscopy is less than or equal to lower detection limit. A portion of the light shielding film excluding the composition gradient portion has a chromium content of 50 atom % or more, and has a maximum peak of Cr2p narrow spectrum, obtained by X-ray photoelectron spectroscopy, at binding energy of 574 eV or less.
    Type: Application
    Filed: January 17, 2017
    Publication date: February 7, 2019
    Applicant: HOYA CORPORATION
    Inventors: Ryo OHKUBO, Osamu NOZAWA, Hiroaki SHISHIDO
  • Publication number: 20190004419
    Abstract: A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask.
    Type: Application
    Filed: September 10, 2018
    Publication date: January 3, 2019
    Applicant: HOYA CORPORATION
    Inventors: Osamu NOZAWA, Ryo Ohkubo, Hiroaki Shishido, Yasushi Okubo
  • Publication number: 20180299767
    Abstract: The mask blank (100) in which a phase shift film (2) made of a material containing silicon, a light shielding film (3) made of a material containing chromium, oxygen, and carbon, and a hard mask film (4) made of a material containing one or more elements selected from silicon and tantalum are provided in this order on a transparent substrate (1) is characterized in that the light shielding film (3) is a single layer film having a composition gradient portion with an increased oxygen content at a surface on the hard mask film (4) side and in a region close thereto, the light shielding film (3) has a maximum peak of N1s narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy of lower detection limit or less, and a part of the light shielding film (3) excluding the composition gradient portion has a chromium content of 50 atom % or more and has a maximum peak of Cr2p narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy at binding energy of 574 eV or less.
    Type: Application
    Filed: October 26, 2016
    Publication date: October 18, 2018
    Applicant: HOYA CORPORATION
    Inventors: Osamu NOZAWA, Ryo OHKUBO, Hiroaki SHISHIDO
  • Patent number: 10101650
    Abstract: A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: October 16, 2018
    Assignee: HOYA CORPORATION
    Inventors: Osamu Nozawa, Ryo Ohkubo, Hiroaki Shishido, Yasushi Okubo
  • Publication number: 20180259841
    Abstract: A mask blank comprising an etching stopper film. The mask blank comprises a thin film for pattern formation on a main surface of a transparent substrate, and is featured in that: the thin film for pattern formation contains silicon, an etching stopper film is provided between the transparent substrate and the thin film for pattern formation, and the etching stopper film contains silicon, aluminum, and oxygen.
    Type: Application
    Filed: May 10, 2016
    Publication date: September 13, 2018
    Applicant: HOYA CORPORATION
    Inventors: Osamu NOZAWA, Takenori KAJIWARA, Ryo OHKUBO
  • Patent number: 9952497
    Abstract: A mask blank suitable for fabricating a phase shift mask having a thin film pattern composed of a material enabling dry etching with a fluorine-based gas and a substrate-engraved pattern. The mask blank 100 is used to fabricate a phase shift mask having a thin film pattern and a substrate-engraved pattern. The mask blank 100 has a structure in which an etching stopper film 2, a thin film for pattern formation 3 and an etching mask film 4 are laminated in this order on a transparent substrate 1. The etching stopper film 2 is made of a material that contains chromium and oxygen and the oxygen content thereof is more than 50 at %. The thin film 3 is made of a material that can be dry-etched by a fluorine-based gas. The etching mask film 4 is made of a material that contains chromium, the chromium content thereof is not less than 45 at %, and the oxygen content thereof is not more than 30 at %.
    Type: Grant
    Filed: October 6, 2016
    Date of Patent: April 24, 2018
    Assignee: HOYA CORPORATION
    Inventors: Yasushi Okubo, Ryo Ohkubo
  • Publication number: 20180052387
    Abstract: A mask blank is provided, which makes it possible to form a fine transfer pattern in a light-semitransmissive film with high accuracy even if the light-semitransmissive film is made of a material containing silicon and a light shielding film is made of a material containing chromium. The mask blank 100 has a structure in which the light-semitransmissive film 2, etching mask film 3, and light shielding film 4 are laminated in this order on the transparent substrate 1. It is featured in that the light-semitransmissive film 2 is made of the material containing silicon, the etching mask film 3 is made of the material containing chromium, the light shielding film 4 is made of a material containing chromium and oxygen, and a ratio of the etching rate of the light shielding film 4 to the etching rate of the etching mask film 3 in the dry etching with an oxygen-containing chlorine-based gas is not less than 3 and not more than 12.
    Type: Application
    Filed: December 24, 2015
    Publication date: February 22, 2018
    Applicant: HOYA CORPORATION
    Inventors: Osamu NOZAWA, Hiroaki SHISHIDO, Ryo OHKUBO
  • Patent number: 9726972
    Abstract: A mask blank wherein damage to a light semitransmissive film due to dry etching for removing a light shielding film is inhibited. Mask blank 100 has a light semitransmissive film 2 and light shielding film 4 laminated on a main surface of a transparent substrate 1. Film 2 can be dry etched with a fluorine-based gas. Film 4 has laminated lower layer 41 and upper layer 42. Lower layer 41 contained tantalum and id substantially free from hafnium, zirconium, and oxygen. Upper layer 42 contains tantalum and one or more of hafnium and zirconium and is substantially free from oxygen excluding the surface layer of the upper layer 42. Between the light semitransmissive film 2 and lower layer 41 is an etching stopper film 3 having etch selectivity with respect to the lower layer 41 in dry etching with an etching gas containing the chlorine-based gas and no oxygen gas.
    Type: Grant
    Filed: August 15, 2014
    Date of Patent: August 8, 2017
    Assignee: HOYA CORPORATION
    Inventors: Hiroaki Shishido, Ryo Ohkubo, Osamu Nozawa
  • Patent number: 9625805
    Abstract: The present invention is a reflective mask blank used to fabricate a reflective mask, which has a laminated structure of a multilayer reflective film, an absorber film and an etching mask film in this order on a substrate, wherein the etching mask film comprises a material containing chromium, the absorber film comprises a material containing tantalum, a highly oxidized layer is formed on the surface layer of the absorber film on the opposite side from the substrate, and a Ta 4f narrow spectrum of the highly oxidized layer when analyzed by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of more than 23 eV.
    Type: Grant
    Filed: June 3, 2015
    Date of Patent: April 18, 2017
    Assignee: HOYA CORPORATION
    Inventors: Kazuya Sakai, Ryo Ohkubo, Osamu Nozawa, Toshiyuki Suzuki