Abstract: Provided are a mask blank, a phase shift mask, and a method of manufacturing a semiconductor device. A mask blank comprises a light-shielding film on a transparent substrate. The light-shielding film is made of a material comprising silicon and nitrogen. An internal region of the light-shielding film has a maximum peak at a binding energy in a range in which a Si2p narrow spectrum obtained by analysis by X-ray photoelectron spectroscopy is more than 100 eV and 101.5 eV or less. The internal region of the light-shielding film is a region obtained by excluding a back surface side region on the transparent substrate side and a front surface side region opposite to the transparent substrate.

Abstract: In the coil component, the terminal electrode enters an aperture of the element body and is jointed with the bump electrode inside the element body. That is, the terminal electrode is in contact with both the bump electrode and the element body. Therefore, as compared with the case where the bump electrode is exposed to the lower surface of the element body, a joint surface of the terminal electrode is enlarged, and high adhesion of the terminal electrode is realized.

Abstract: In the coil component, the lower end portion of the bump electrode protruding from the lower surface of the element body includes a flange portion, and the lower surface of the lower end portion is concave-convex. Therefore, compared to the case where the bump electrode is exposed in the form of a flat surface so as to be flat with the lower surface of the element body, the contact areas between the bump electrodes and the terminal electrodes are increased, and high connection reliability between the bump electrodes and the terminal electrodes is realized.

Abstract: In the coil component, the edge of the aperture of the protection film covering the coil from the lower surface side of the element body does not extend in the same plane. In this case, even if a crack occurs in the joint region between the coil and the bump electrode, the crack is less likely to cross the joint region as compared with the case where the edge extends in the same plane. Therefore, in the coil component, the crack is effectively suppressed.

Abstract: A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom % or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.

Abstract: A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom% or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.

Abstract: A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom % or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.

Abstract: Provided is a mask blank (100) for manufacturing a phase shift mask, the mask blank enabling formation of a high-precision and fine pattern on a light shielding film.

Abstract: In the present invention, an etching stopper film (2), a light-blocking film (3) comprising a material containing one or more elements selected from among silicon and tantalum, and a hard mask film (4) are laminated in that order on a translucent substrate (1). The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atom % or more, the maximum peak in a N1s narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and a Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a bond energy of 574 eV or less.

Abstract: A mask blank in which a phase shift film provided on a light-permeable substrate includes at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer is made from a silicon nitride-based material and the oxygen-containing layer is made from a silicon oxide-based material, wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of a Si2p narrow spectrum and the light-permeable substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of a Si2p narrow spectrum, the numerical value (PSi_f)/(PSi_s), which is produced by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the light-permeable substrate, is 1.09 or less.

Abstract: A mask blank 100 has a structure in which a pattern-forming thin film 3 and a hard mask film 4 are formed on a transparent substrate 1 in this order. An Si2p narrow spectrum obtained by analyzing the hard mask film by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of at least 103 eV. An N1s narrow spectrum obtained by analyzing the hard mask film by X-ray photoelectron spectroscopy has a maximum peak below a detection lower limit value. In the hard mask film 4, a content ratio (atomic %) of silicon and oxygen is Si:O=1:less than 2.

Abstract: A mask blank has a structure in which a pattern-forming thin film and a hard mask film are formed on a substrate in this order. The hard mask film is made of a material containing silicon, oxygen, and nitrogen. The hard mask film has a nitrogen content of at least 2% and at most 18%. An Si2p narrow spectrum obtained by analyzing the hard mask film by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of at least 103 eV.

Abstract: A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for Nis in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom % or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.

Abstract: A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom % or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.

Abstract: Provided is a mask blank including an etching stopper. The mask blank has a structure where an etching stopper film and a thin film for pattern formation are stacked in this order on a transparent substrate, in which the thin film is formed of a material containing silicon, the etching stopper film is formed of a material containing hafnium, aluminum, and oxygen, and an oxygen deficiency ratio of the etching stopper film is 6.4% or less.

Abstract: Provided is a mask blank including an etching stopper film. The mask blank has a structure where an etching stopper film and a thin film for pattern formation are stacked in this order on a transparent substrate, featured in that the thin film includes a material containing silicon, the etching stopper film includes a material containing hafnium, aluminum, and oxygen, and a ratio by atom % of an amount of hafnium to a total amount of hafnium and aluminum in the etching stopper film is 0.86 or less.

Abstract: In the present invention, an etching stopper film (2), a light-blocking film (3) comprising a material containing one or more elements selected from among silicon and tantalum, and a hard mask film (4) are laminated in that order on a translucent substrate (1). The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atom % or more, the maximum peak in a N1s narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and a Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a bond energy of 574 eV or less.

Abstract: In the present disclosure, an etching stopper film, a light shielding film comprising a material containing one or more elements selected from silicon and tantalum, and a hard mask film are laminated in that order on a transparent substrate. The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atomic % or more, the maximum peak in N1s narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a binding energy of 574 eV or less.

Abstract: A mask blank in which a phase shift film provided on a light-permeable substrate includes at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer is made from a silicon nitride-based material and the oxygen-containing layer is made from a silicon oxide-based material, wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of a Si2p narrow spectrum and the light-permeable substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of a Si2p narrow spectrum, the numerical value (PSi_f)/(PSi_s), which is produced by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the light-permeable substrate, is 1.09 or less.

Abstract: A mask blank having fast repair rate of EB defect repair and high repair rate ratio to EB defect repair relative to a transparent substrate that includes a phase shift film on a transparent substrate, the phase shift film has a structure including three sets or more of a set of a stacked structure including a high transmitting layer and a low transmitting layer, the high transmitting layer and the low transmitting layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from a metalloid element and a non-metallic element, the high transmitting layer includes 50 atom % or more nitrogen content and has a thickness of 12 nm or less, and the low transmitting layer includes less than 50 atom % nitrogen content and has a thickness less than the high transmitting layer.