Abstract: A light-emitting device (1) is provided having a current blocking layer (9) of buried structure, a portion of the current blocking layer (9) having an oxygen concentration higher than that of a light-emitting layer, the current blocking layer being of a thickness of not less than 5 nm and not more than 100 nm. It includes an etching stop layer (24) below the current blocking layer (9), the etching stop layer being good in oxidation resistance. The light-emitting device (1) and its manufacturing method are provided such that the device has its current confinement effect improved and its output increased at lower forward voltage.

Abstract: Provided is a surface light emitting element having a high productivity, a high light emission output and good response characteristics, as well as capable of suppressing an increase of a forward voltage necessary for light emission. A surface light emitting element according to the present invention is a vertical cavity surface light emitting element including: an active layer 5 in which a quantum well layer 51 and a barrier layer 52 are alternately laminated; and reflective layers disposed both above and below the active layer 5, wherein assuming that a center-to-center distance of a plurality of the quantum well layers is L, a light emission wavelength of the surface light emitting element is ?, and an average refractive index of an optical length of a resonator, being a distance between the reflective layers is n, a condition of ?/(15×n)?L??/(10×n) is satisfied.

Abstract: A semiconductor material is provided comprising: a composition graded layer, formed on a Si substrate or an interlayer formed thereon, comprising a composition of AlXGa1-XN graded such that a content ratio of Al in the composition decreases continuously or discontinuously in a crystal growing direction; a superlattice composite layer, formed on the composition graded layer, comprising a high Al-containing layer comprising a composition of AlYGa1-YN and a low Al-containing layer comprising a composition of AlZGa1-ZN that are laminated alternately; and a nitride semiconductor layer formed on the superlattice composite layer.

Abstract: A novel vertical resonator type light emitting diode of which has a simplified structure of the reflector layer of its light emitting side an which is resistant to declination of its emission output power towards a high temperature range, has an active layer 5, and a first reflector layer 3 at its light reflecting side and a second reflector layer 9 at its light emitting side which are formed to sandwich the active later 5 between them, wherein each of the first reflector layer 3 and the second reflector layer 9 is structured to comprise a plurality of pairs of two alternate semiconductor layers formed which are different from each other in refractive index, and the second reflector layer 9 has a number of such pairs which is not less than 1/10 and not more than ? of that which said first reflector layer 3 has. The emission output power can be enhanced when the first reflector layer has a number of such pairs which is not less than 11 and not more than 41.

Abstract: A light-emitting device (1) is provided having a current blocking layer (9) of buried structure, a portion of the current blocking layer (9) having an oxygen concentration higher than that of a light-emitting layer, the current blocking layer being of a thickness of not less than 5 nm and not more than 100 nm. It includes an etching stop layer (24) below the current blocking layer (9), the etching stop layer being good in oxidation resistance. The light-emitting device (1) and its manufacturing method are provided such that the device has its current confinement effect improved and its output increased at lower forward voltage.

Abstract: Provided is a surface light emitting element having a high productivity, a high light emission output and good response characteristics, as well as capable of suppressing an increase of a forward voltage necessary for light emission. A surface light emitting element according to the present invention is a vertical cavity surface light emitting element including: an active layer 5 in which a quantum well layer 51 and a barrier layer 52 are alternately laminated; and reflective layers disposed both above and below the active layer 5, wherein assuming that a center-to-center distance of a plurality of the quantum well layers is L, a light emission wavelength of the surface light emitting element is ?, and an average refractive index of an optical length of a resonator, being a distance between the reflective layers is n, a condition of ?/(15×n)?L??/(10×n) is satisfied.

Abstract: The purpose of the present invention is to provide a water-soluble tetrazolium compound that will form a water-soluble formazan exhibiting long-wavelength absorption and is stable in aqueous solution for a long period and suitable for the quantitative analysis of dehydrogenases or substrates thereof. Disclosed is a water soluble tetrazolium compound expressed by the following general formula (1): wherein each of R1 to R19 independently represents hydrogen atom; nitro group; sulfonate group or alkyl, alkoxy, sulfoalkyl or sulfoalkyloxy groups having 1 to 4 carbon atoms; provided that each of at least two of R1 to R19 independently represents sulfonate group; or sulfoalkyl or sulfoalkyloxy groups having 1 to 4 carbon atoms; and M represents an alkali metal or ammonium ion.

Abstract: A novel vertical resonator type light emitting diode of which has a simplified structure of the reflector layer of its light emitting side an which is resistant to declination of its emission output power towards a high temperature range, has an active layer 5, and a first reflector layer 3 at its light reflecting side and a second reflector layer 9 at its light emitting side which are formed to sandwich the active later 5 between them, wherein each of the first reflector layer 3 and the second reflector layer 9 is structured to comprise a plurality of pairs of two alternate semiconductor layers formed which are different from each other in refractive index, and the second reflector layer 9 has a number of such pairs which is not less than 1/10 and not more than ? of that which said first reflector layer 3 has. The emission output power can be enhanced when the first reflector layer has a number of such pairs which is not less than 11 and not more than 41.

Abstract: A surface preparation method and semiconductor device constituted so as to enable the prevention of carrier accumulation resulting from Si acting as a donor, without making the constitution of a semiconductor manufacturing apparatus complex. When forming an epitaxial layer either on the surface of a substrate, or on the surface of a base layer, Si or an Si compound that exists on the surface of a substrate, or on the surface of a base layer, is removed in accordance with a thermal cleaning process that uses an As hydride gas as the cleaning gas.

Abstract: A novel primary or secondary battery whose active material for the negative electrode is composed of metallic gallium, gallium alloys or gallium oxide has first come into the world.Gallium has an electrochemical equivalent of 23.24, which is smaller than those of zinc (32.70) and cadmium (56.21). This indicates that when used as an active material for the negative electrode in batteries, gallium has larger capacity per unit mass than zinc and cadmium by respective factors of ca. 1.4 and 2.4. The potential of the reaction; Ga+6OH.sup.- =GaO.sub.3.sup.3- +3H.sub.2 O+3e.sup.- is obviously less noble than the voltage of hydrogen evolution and this means that a high-potential battery can be made. Due to the high hydrogen overvoltage of gallium, gallium ions in the solution can be precipitated as metallic gallium by electrodeposition. As a further advantage, no dendrite formation occurs during the electrodeposition unlike in the case of zinc.