Abstract: An iron silicide sputtering target in which the oxygen as a gas component in the target is 1000 ppm or less and a method of manufacturing such an iron silicide sputtering target are provided. The method includes the steps of melting/casting high purity iron and silicon under high vacuum to prepare an alloy ingot, subjecting the ingot to gas atomization with inert gas to prepare fine powder, and thereafter sintering the fine powder. The amount of impurities in the target will be reduced, the thickness of a ?FeSi2 film during deposition can be made thick, the generation of particles will be reduced, a uniform and homogenous film composition can be yielded, and the sputtering characteristics will be favorable. The foregoing manufacturing method is able to stably produce the target.

Abstract: A photo service system according to the present invention is provided with: a first storage control device which stores unique visitor identification information stored in an IC chip of an admission ticket equipped with IC chip and a registered face image, a face image of a visitor who holds the admission ticket equipped with IC chip, in association with each other, in a first storage medium; an extraction device which extracts, from an original image taken with a visitor as an object, an extracted face image indicating a face portion of the visitor; a second storage control device which identifies a registered face image matching the extracted face image from the first storage medium, and stores visitor identification information corresponding to the identified registered face image and an extracted face image matching the identified registered face image in association with each other, in a second storage medium; a reading device which reads unique visitor identification information from the admission ticke

Abstract: A display device for a vehicle has a first display unit constructed of a liquid crystal display for displaying first information and a second display unit including a display portion for displaying second information. The second information is illuminated by receiving light emitted from a light source and displayed at an intensity higher than an intensity of a background area that is illuminated by receiving light emitted from another light source. An optical coloring member is disposed such that an illuminating color and a brightness of the background area of the second display unit are substantially equal to those of a background area of the first information of the liquid crystal display.

Abstract: Provided is a sintered silicon wafer in which the maximum crystal grain size is 20?m or less and the average crystal grain size is 1?m or more but not more than 10?m; specifically, provides is a sintered silicon wafer having the following mechanical properties measured by collecting a plurality of test samples from the sintered silicon wafer having a diameter of 400mm or more, namely, the average deflecting strength based on a three-point bending test of 20kgf/mm2 or more but not more than 50kgf/mm2, the average tensile strength of 5kgf/mm2 or more but not more than 20kgf/mm2, and the average Vickers hardness of Hv 800 or more but not more than Hv 1200. The provided sintered silicon wafer is a sintered compact wafer having a fixed strength and mechanical properties similar to those of single-crystal silicon even when it is a sintered silicon wafer of large-size disk shape.

Abstract: A cyclic olefin-based polymer containing a repeating unit represented by formula (1), an optical material containing the cyclic olefin-based polymer, a polarizing plate containing the optical material, and a liquid crystal display device containing the polarizing plate: in which R1 represents a substituent; L represents a single bond or a divalent linking group, and forms an alcohol together with the —OH group; p represents an integer of 0 or 1; q represents an integer of from 0 to 3; r represents an integer of from 1 to 4; and R1 and L may be combined with each other to form a 5- to 7-membered ring.

Abstract: A KNbO3—NaNbO3 piezoelectric porcelain composition which exhibits a larger piezoelectric constant than those of conventional ones and does not have any secondary phase transition point in the neighborhood of room temperature (10 to 40° C.), that is, a piezoelectric porcelain composition represented by the general formula: (1-y-z-w)(KxNa1-x)NbO3+yLiNbO3+zSrTiO3+wBiFeO3, wherein (KxNa1-x)NbO3 represents potassium sodium niobate; LiNbO3 represents lithium niobate; SrTiO3 represents strontium titanate; and BiFeO3 represents bismuth ferrate; with the proviso that 0.4<x<0.6, 0<y?0.1, 0<z<0.1, 0<w<0.09, and 0.03<y+z+w?0.12.

Abstract: Provided is iron silicide powder in which the content of oxygen as the gas component is 1500 pppm or less, and a method of manufacturing such iron silicide powder including the steps of reducing iron oxide with hydrogen to prepare iron powder, heating the iron powder and Si powder in a non-oxidizing atmosphere to prepare synthetic powder containing FeSi as its primary component, and adding and mixing Si powder once again thereto and heating this in a non-oxidizing atmosphere to prepare iron silicide powder containing FeSi2 as its primary component. The content of oxygen as the gas component contained in the iron silicide powder will decrease, and the iron silicide powder can be easily pulverized as a result thereof. Thus, the mixture of impurities when the pulverization is unsatisfactory will be reduced, the specific surface area of the iron silicide powder will increase, and the density can be enhanced upon sintering the iron silicide powder.

Abstract: A method of estimating an air-intake amount of an internal combustion engine is provided. The method may comprise detecting a fluid energy amount in an interior of an air-intake passage at first and second points in time while an intake valve is closed from a compression stroke to an exhaust stroke, and calculating a predicted air-intake amount using the values of the fluid energy amounts at the first and second points with reference to an air-intake amount calculation map showing a correlation between the values of the fluid energy amounts at the first and second points and the predicted air-intake amount in the intake stroke, the air-intake amount calculation map being pre-created by finding the values of the fluid energy amounts in the air-intake passage at the first and second points and the air-intake amount, for plural running states of the internal combustion engine.

Abstract: Provided is a sintered silicon wafer, wherein the ratio [I(220)/I(111) . . . (1)] of intensity of a (220) plane and intensity of a (111) plane measured by X-ray diffraction is 0.5 or more and 0.8 or less, and the ratio [I(311)/I(111) . . . (2)] of intensity of a (311) plane and intensity of a (111) plane is 0.3 or more and 0.5 or less. The provided sintered silicon wafer has a smooth surface in which its surface roughness is equivalent to a single crystal silicon.

Abstract: The present invention provides compounds having excellent 11?-HSD1 inhibitory activity. A compound represented by the following formula (I): [wherein X1 represents an oxygen atom, or the formula —(CR11R12)p—, etc., Y1 represents a hydrogen atom, a hydroxyl group, etc., Z1 represents an oxygen atom or the formula —(NR14)—, R1 represents a hydrogen atom, a halogen atom, a cyano group, a C1-4 alkyl group, a C1-4 alkyl group substituted with 1 to 3 halogen atoms, a C1-4 alkoxy group, a C1-4 alkoxycarbonyl group, a carboxyl group, a carbamoyl group, or an amino group, and m represents an integer of 1 or 2, and R2 represents a hydrogen atom or a C1-4 alkyl group, and n represents an integer of 1 or 2].

Abstract: To inform the users of the time necessary for focus to be achieved by changing the focal mark shown on the display monitor, second by second, corresponding to the elapsed time from the start of the auto focus operation until focus is achieved. The users are informed of the status of the auto focusing operations, and have a good idea of how much longer it will take for focusing to be completed. As a result, it increases the probability of users holding the camera still, so as to produce precisely focused photographs.

Abstract: Intended is improvement in reliability of a disk array unit formed of a plurality of nodes at the time of start-up and stop. The disk array unit formed of a plurality of nodes, which includes a control unit which executes power source control of other node based on power source control information set at one of the nodes by inter-node communication executed through a common signal line which connects each node.

Abstract: Provided is iron silicide powder in which the content of oxygen as the gas component is 1500 ppm or less, and a method of manufacturing such iron silicide powder including the steps of reducing iron oxide with hydrogen to prepare iron powder, heating the iron powder and Si powder in a non-oxidizing atmosphere to prepare synthetic powder containing FeSi as its primary component, and adding and mixing Si powder once again thereto and heating this in a non-oxidizing atmosphere to prepare iron silicide powder containing FeSi2 as its primary component. The content of oxygen as the gas component contained in the iron silicide powder will decrease, and the iron silicide powder can be easily pulverized as a result thereof. Thus, the mixture of impurities when the pulverization is unsatisfactory will be reduced, the specific surface area of the iron silicide powder will increase, and the density can be enhanced upon sintering the iron silicide powder.

Abstract: A light-emitting apparatus has a light-emitting device and a supporting board. The light-emitting device has a pair of n-electrodes with a p-electrode therebetween, on the same plane. The supporting board includes an insulating substrate on which positive and negative electrodes are formed, opposing to the p- and n-electrodes of the light-emitting device, respectively. Bonding members bond the p- and n-electrodes with the positive and negative electrodes, respectively. The positive electrode on the supporting board is formed within the width region of the p-electrode and narrower in width than the width of the p-electrode, in a cross-section along a line extending through the pair of n-electrodes. The negative electrodes oppose to the n-electrodes, respectively, with the same widths, or with that side face of each of the negative electrodes which faces the positive electrode being retracted outwardly from that side face of each of the n-electrodes which faces the p-electrode.

Abstract: An organic-inorganic hybrid composition comprising a thermoplastic resin and inorganic fine particles, wherein the thermoplastic resin is a resin comprising a repeat unit in which a structure unit represented by the following formula (1) is contained in the main chain of the repeat unit: wherein R represents an alkyl group, an aryl group, an alkoxy group, an aryloxy group or hydroxyl group; and A0 represents oxygen atom, sulfur atom or selenium atom.

Abstract: A hafnium silicide target is provided. The target is used for forming a gate oxide film composed of HfSi1.02-2.00. The target material is superior in workability and embrittlement resistance and is suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO2 film. A method of manufacturing the above referenced hafnium silicide target is also provided.

Abstract: An optical film is provided and includes a base member and an optical layer on the base member. The optical layer has a surface asperity formed by applying a coating material containing microparticles and resin on the base member, distributing the microparticles densely in some parts and sparsely in other parts by convections that occur in the coating material, and curing the coating material. The average diameter of the microparticles is 2.4 ?m or more and 8 ?m or less. The average thickness of the optical layer is 6.4 ?m or more and 18 ?m or less. The arithmetic mean roughness Ra of a roughness profile of the optical layer surface is 0.03 ?m or more and 0.15 ?m or less and the root-mean-square slope R?q is 0.01 or more and 0.03 or less. The difference in refractive index between the resin and the microparticles is 0 or more and 0.015 or less.

Abstract: A quantum dot infrared photodetector includes a quantum dot structure including intermediate layers, and a quantum dot layer sandwiched between the intermediate layers and including quantum dots whose energy potential is low for carriers, the intermediate layers and the quantum dots being formed of a III-V compound semiconductor with the V element being As, and an AlAs layer being provided on one of the interfaces between the intermediate layers and the quantum dot layer including the quantum dots and covering at least the quantum dots.

Abstract: Provided is a sintered silicon wafer, wherein the volume ratio of silicon oxide contained in the wafer is 0.01% or more and 0.2% or less, the volume ratio of silicon carbide is 0.01% or more and 0.15% or less, and the volume ratio of metal silicide is 0.006% or less. Additionally provided is a sintered silicon wafer having a diameter of 400 mm or more and having the following mechanical properties (1) to (3) measured by collecting a plurality of test samples from the sintered silicon wafers: (1) average value of the deflecting strength based on a three-point bending test is 20 kgf/mm2 or more and 50 kgf/mm2 or less; (2) average value of the tensile strength is 5 kgf/mm2 or more and 20 kgf/mm2 or less; and (3) average value of the Vickers hardness is Hv 800 or more and Hv 1200 or less. Even in the case of a large disk-shaped sintered silicon wafer, it is possible to provide a sintered compact wafer having definite strength and similar mechanical properties as single crystal silicon.

Abstract: A service server comprising: a database for registering a voice message; an access information issuing device which issues access information required for inputting the voice message from a user terminal through a network; a print instructing device which sends the access information to a printer along with a given picture to cause the printer to print the access information and the picture on the same print medium; an access information input device in which access information obtained on a user terminal is inputted from the user terminal through the network on the basis of the print medium; a voice message input device in which a voice message is inputted through the network from a user terminal sending the access information; a voice message registration device which registers the voice message inputted from the user terminal sending the access information in the database in association with the access information; and a voice message output device which outputs the voice message registered in the data