Abstract: A learning device includes an acquisition unit that acquires a local model corresponding to a feature value held by the own device, a residual calculation unit that calculates a difference between an output of a vertical federated learning model having been learned previously and an output of the local model acquired by the acquisition unit, and an additional tree learning unit that learns an additional tree to be added to the local model acquired by the acquisition unit, on the basis of the result of calculation by the residual calculation unit and the feature value held by the own device.

Abstract: A semiconductor substrate contains a clathrate compound of the following General Formula (I). The semiconductor substrate includes a variable-composition layer which includes a pn junction and where composition of the clathrate compound varies along a thickness direction. A rate of change in y in the thickness direction of at least a portion of the variable-composition layer is 1×10?4/?m or more. AxByC46-y ??(I) In General Formula (I), A represents at least one element selected from the group consisting of Ba, Na, Sr, and K, B represents at least one element selected from the group consisting of Au, Ag, Cu, Ni, and Al, and C represents at least one element selected from the group consisting of Si, Ge, and Sn, x is 7 to 9, and y is 3.5 to 6 or 11 to 17.

Abstract: A semiconductor substrate contains a clathrate compound of the following General Formula (I). The semiconductor substrate includes a variable-composition layer which includes a pn junction and where composition of the clathrate compound varies along a thickness direction. A rate of change in y in the thickness direction of at least a portion of the variable-composition layer is 1×10?4/?m or more. AxByC46-y ??(I) In General Formula (I), A represents at least one element selected from the group consisting of Ba, Na, Sr, and K, B represents at least one element selected from the group consisting of Au, Ag, Cu, Ni, and Al, and C represents at least one element selected from the group consisting of Si, Ge, and Sn, x is 7 to 9, and y is 3.5 to 6 or 11 to 17.

Abstract: A production process of a thick-film tape-shaped RE-type (123) superconductor having a high critical current value. The production process has the steps of providing a composite substrate having Gd2Zr2O7 and CeO2 stacked in that order onto a Hastelloy substrate, coating a raw material solution prepared by dissolving a trifluoroacetate of Y and Ba and a naphthenate of Cu onto the composite substrate, heat treating the coated composite substrate by calcination, then subjecting the calcined assembly to intermediate heat-treatment at a temperature below the temperature of heat-treatment for superconductor production, and then heat treating the assembly in an argon gas atmosphere under conditions of highest heating temperature 760° C., water vapor partial pressure 13.5%, and oxygen partial pressure 0.09% for superconductor production to produce a tape-shaped RE-type (123) superconductor having a YBCO superconducting film having a thickness of more than about 2 ?m.

Abstract: A method of manufacturing a tape-formed oxide superconductor, in which a tape-formed wire material (6 in FIG. 1) is extended between a pair of reels (5a and 5b). Besides, a reactive gas is supplied form the gas supply ports of a reactive gas supply pipe (3a) vertically to the upper side film surface of the tape-formed wire material (6), so as to react the film body of this tape-formed wire material into a superconducting layer, while at the same time, a gas after the reaction is discharged from the gas discharge ports of discharge pipes (4a and 4b) for discharging the gas after the reaction. Likewise, the reactive gas is supplied vertically to the lower side film surface of the tape-formed wire material (6), so as to react the film body of this tape-formed wire material into a superconducting layer, while at the same time, the gas after the reaction is discharged from the gas discharge ports of discharge pipes (4c and 4d) for discharging the gas after the reaction.

Abstract: This invention provides a production process of a thick-film tape-shaped RE-type (123) superconductor having a high critical current value. The production process comprises providing a composite substrate comprising Gd2Zr2O7 and CeO2 stacked in that order onto a Hastelloy substrate, coating a raw material solution prepared by dissolving a trifluoroacetate of Y and Ba and a naphthenate of Cu onto the composite substrate, heat treating the coated composite substrate by calcination, then subjecting the calcined assembly to intermediate heat-treatment at a temperature below the temperature of heat-treatment for superconductor production, and then heat treating the assembly in an argon gas atmosphere under conditions of highest heating temperature 760° C., water vapor partial pressure 13.5%, and oxygen partial pressure 0.09% for superconductor production to produce a tape-shaped RE-type (123) superconductor comprising a YBCO superconducting film having a thickness of more than about 2 ?m.

Abstract: A method of manufacturing a tape-formed oxide superconductor, in which a tape-formed wire material (6 in FIG. 1) is extended between a pair of reels (5a and 5b). Besides, a reactive gas is supplied form the gas supply ports of a reactive gas supply pipe (3a) vertically to the upper side film surface of the tape-formed wire material (6), so as to react the film body of this tape-formed wire material into a superconducting layer, while at the same time, a gas after the reaction is discharged from the gas discharge ports of discharge pipes (4a and 4b) for discharging the gas after the reaction. Likewise, the reactive gas is supplied vertically to the lower side film surface of the tape-formed wire material (6), so as to react the film body of this tape-formed wire material into a superconducting layer, while at the same time, the gas after the reaction is discharged from the gas discharge ports of discharge pipes (4c and 4d) for discharging the gas after the reaction.

Abstract: A water solution of lead nitrate is infiltrated into a substrate made of a porous material, and liquid drops of a water solution of sodium sulfide, which is charged into a ink cartridge of a minute nozzle, are sprayed onto the substrate from the minute nozzle. The lead component from the lead nitrate water solution and the sulfur component from the sodium sulfide water solution are synthesized directly on the substrate, and thus, a thin film made of lead sulfide is formed on the substrate.

Abstract: A blended solution is made by melting LiOH.H2O into distilled water, and then, Co metallic powders are added into the blended solution to make a reactive solution. The reactive solution is charged into an autoclave, and held at a predetermined temperature. Then, a pair of platinum electrodes are set into the reactive solution, and a given voltage is applied between the pair of platinum electrode. As a result, a compound thin film, made of crystal LiCoO2 including Li element of the blended solution and Co element of the Co metallic powders, is synthesized on the platinum electrode constituting the anode electrode.

Abstract: A first reactive solution is made of a water solution composed of LiOH.7H2O melted in distilled water, and a second reactive solution is made of a water solution composed of CoSO4.7H2O melted in distilled water. Then, the first and the second reactive solutions are put in a flow-type reactor with a pair of electrodes and a porous base material provided in between the pair of electrodes therein. The first reactive solution is flown in between one electrode and the porous base material at its given flow rate, and the second reactive solution is flown in between the other electrode and the porous base material at its given flow rate. Then, a given voltage is applied between the pair of electrodes to synthesize a compound thin film including the components of the first and the second reactive solutions directly on the porous base material.

Abstract: A first reactive solution is made of a water solution composed of LiOH.7H2O melted in distilled water, and a second reactive solution is made of a water solution composed of CoSO4.7H2O melted in distilled water. Then, the first and the second reactive solutions are put in a flow-type reactor with a pair of electrodes and a porous base material provided in between the pair of electrodes therein. The first reactive solution is flown in between one electrode and the porous base material at its given flow rate, and the second reactive solution is flown in between the other electrode and the porous base material at its given flow rate. Then, a given voltage is applied between the pair of electrodes to synthesize a compound thin film including the components of the first and the second reactive solutions directly on the porous base material.

Abstract: A blended solution is made by melting LiOH•H2O into distilled water, and then, Co metallic powders are added into the blended solution to make a reactive solution. The reactive solution is charged into an autoclave, and held at a predetermined temperature. Then, a pair of platinum electrodes are set into the reactive solution, and a given voltage is applied between the pair of platinum electrode. As a result, a compound thin film, made of crystal LiCoO2 including Li element of the blended solution and Co element of the Co metallic powders, is synthesized on the platinum electrode constituting the anode electrode.

Abstract: A water solution of lead nitrate is infiltrated into a substrate made of a porous material, and liquid drops of a water solution of sodium sulfide, which is charged into a ink cartridge of a minute nozzle, are sprayed onto the substrate from the minute nozzle. The lead component from the lead nitrate water solution and the sulfur component from the sodium sulfide water solution are synthesized directly on the substrate, and thus, a thin film made of lead sulfide is formed on the substrate.