Patents by Inventor Ryo Urakawa

Ryo Urakawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit with hydrogen absorption structure
    Patent number: 9640544
    Abstract: An integrated circuit such as a NAND flash memory includes a dielectric layer overlying transistors (e.g. NAND flash memory cells) that are formed along a surface of a substrate and a hydrogen absorption structure overlying the dielectric layer, the hydrogen absorption structure extending over the transistors, the hydrogen absorption structure being electrically isolated from the transistors.
    Type: Grant
    Filed: April 24, 2015
    Date of Patent: May 2, 2017
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Arata Okuyama, Ryo Urakawa, Hiroshi Omi
  • INTEGRATED CIRCUIT WITH HYDROGEN ABSORPTION STRUCTURE
    Publication number: 20160315091
    Abstract: An integrated circuit such as a NAND flash memory includes a dielectric layer overlying transistors (e.g. NAND flash memory cells) that are formed along a surface of a substrate and a hydrogen absorption structure overlying the dielectric layer, the hydrogen absorption structure extending over the transistors, the hydrogen absorption structure being electrically isolated from the transistors.
    Type: Application
    Filed: April 24, 2015
    Publication date: October 27, 2016
    Inventors: Arata Okuyama, Ryo Urakawa, Hiroshi Omi