Abstract: Provided is an antenna-equipped semiconductor package which is excellent in solder heat resistance and has low transmission loss. In the antenna-equipped semiconductor package 100 in which an antenna unit 5 is integrally formed in a semiconductor device unit 10, at least one of an insulating layer 1 for connecting the semiconductor device unit 10 and the antenna unit 5 and an insulating layer 1 inside the antenna unit is a cured product of a resin composition including (A) a styrene-based elastomer having a double bond and (B) a compound generating a radical.

Abstract: A radome has a structure in which core portions are laminated to opposite side surfaces of a high relative-dielectric-constant layer, respectively, and skin portions are additionally laminated to opposite side surfaces of the laminate, respectively. Furthermore, the skin portions laminated to the outside surfaces are coated with a coating material. The radome accommodates an antenna. The high relative-dielectric constant layer has a relative dielectric constant that is larger than the relative dielectric constants of the skin portions, and of the core portions.

Abstract: A radome has a structure in which respective skin portions are laminated to an internal surface and an external surface of a core portion, respectively, and the surface of the skin portion laminated to the external surface thereof is coated with a coating material. The radome accommodates an antenna. A material is dispersed in the two skin portions or the core portion, or in both the two skin portions and the core portion. The material has a relative dielectric constant that is different from the portion in which the material is dispersed, thereby adjusting the difference between the relative dielectric constants of the skin portions and the core portion to no more than 1.5.

Abstract: A radome has a structure in which core portions are laminated to opposite side surfaces of a high relative-dielectric-constant layer, respectively, and skin portions are additionally laminated to opposite side surfaces of the laminate, respectively. Furthermore, the skin portions laminated to the outside surfaces are coated with a coating material. The radome accommodates an antenna. The high relative-dielectric constant layer has a relative dielectric constant that is larger than the relative dielectric constants of the skin portions, and of the core portions.

Abstract: On one surface of a normal paper sheet 1, patterns 2 are printed, and tabs 3 for sticking are printed at the outside portions of the outlines of the patterns 2. On the reverse sides of the patterns 2, sticky surfaces 4 are provided at corresponding portions to which the tabs 3 for sticking are to be stuck. On the side having sticky surfaces 4 are provided a release sheet 6 whose size is substantially the same as the paper sheet 1. Lines 7 for clipping are provided along the outlines of the patterns 2 and the tabs 3 for sticking. Lines 8 and 9 for folding are provided in an inside area of the lines for clipping. The patterns 2 and the tabs 3 for sticking are clipped along the lines 7 for clipping. The clipped patterns are fabricated into a three-dimensional toy by folding along the lines for folding. Then the tabs 3 for sticking are fixedly stuck to the sticky surfaces 4 which are on the reverse sides of the patterns 2.

Abstract: The hole density of an oxide superconductor having holes as carriers is higher than the hole density to bring the highest value of the superconductivity critical temperature Tc thereof, and it can be made higher than the optimal density to bring the highest Tc value by treating the oxide superconductor with heat in an oxidizing gas atmosphere, or by replacing positive ions constituting the oxide superconductor except for copper with ions of a low valence number. Accordingly, it is possible to substantially reduce the rate of decrease of the critical current density owing to an applied magnetic field when the magnetic field is applied parallel to the crystal c axis, and to allow a current conductor produced by using the oxide superconductor to have high critical current density.