Patents by Inventor Ryo Wada
Ryo Wada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11987658Abstract: A curable resin composition that is capable of forming a cured product having impact resistance and a high elastic modulus, and has a low viscosity, thereby being suitable for three-dimensional shaping. The curable resin composition contains: (A) an ?-(unsaturated alkoxyalkyl)acrylic acid or an ester thereof; (B) a bifunctional radically polymerizable oligomer; optionally (C) a radically polymerizable compound other than the component (A) and the component (B); (D) rubber particles; and (E) a radical polymerization initiator, wherein the component (A) is represented by the following formula (1).Type: GrantFiled: February 28, 2022Date of Patent: May 21, 2024Assignee: CANON KABUSHIKI KAISHAInventors: Kazuho Saeki, Takayuki Hiratani, Ryo Ogawa, Kyohei Wada
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Patent number: 11961059Abstract: The present disclosure promotes distribution of sensor data among a plurality of business operators. A controller that an information processing system according to the present disclosure includes collects first data including a plurality of items and personal information from mobile bodies belonging to a first business operator. The controller converts the first data to second data not being usable to identify individuals. The controller provides data in a range decided based on content of a predetermined data use contract, among the second data, to a second business operator. The controller calculates a consideration for the data that is to be paid by the second business operator, based on a data use record of the second business operator.Type: GrantFiled: August 24, 2021Date of Patent: April 16, 2024Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Nobuaki Matsueda, Takashi Sueki, Jun Okamoto, Takumi Wada, Ryo Midorikawa, Junichi Nonaka, Wataru Shiraishi, Yasuhisa Fujiwara, Hiroshi Ishikawa, Shigeru Ichikawa, Hidetaka Eguchi, Masayo Nagai, Mika Inaba
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Patent number: 10304924Abstract: According to one embodiment, a hydrogen concentration of a bottom part in a vicinity of a boundary with the insulating layer in the first silicon layer is higher than a hydrogen concentration of a part above the bottom part in the first silicon layer. And a resistivity of the bottom part in the first silicon layer is lower than a resistivity of the part above the bottom part in the first silicon layer.Type: GrantFiled: December 4, 2017Date of Patent: May 28, 2019Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage CorporationInventor: Ryo Wada
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Publication number: 20180350899Abstract: According to one embodiment, a hydrogen concentration of a bottom part in a vicinity of a boundary with the insulating layer in the first silicon layer is higher than a hydrogen concentration of a part above the bottom part in the first silicon layer. And a resistivity of the bottom part in the first silicon layer is lower than a resistivity of the part above the bottom part in the first silicon layer.Type: ApplicationFiled: December 4, 2017Publication date: December 6, 2018Inventor: Ryo Wada
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Patent number: 9780659Abstract: In general, according to one embodiment, a semiconductor device includes a device main body, a semiconductor substrate. The device main body includes a semiconductor substrate mounting part and a first conductor provided around the semiconductor substrate mounting part. The semiconductor substrate includes a DC-to-DC converter control circuit having a detector to detect at least one of a current flowing through the first conductor and a voltage supplied to the first conductor. The semiconductor substrate is disposed on the semiconductor substrate mounting part so that the detector comes close to the first conductor.Type: GrantFiled: October 15, 2015Date of Patent: October 3, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Hiroshi Saito, Ryo Wada, Yuichi Goto
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Publication number: 20160036331Abstract: In general, according to one embodiment, a semiconductor device includes a device main body, a semiconductor substrate. The device main body includes a semiconductor substrate mounting part and a first conductor provided around the semiconductor substrate mounting part. The semiconductor substrate includes a DC-to-DC converter control circuit having a detector to detect at least one of a current flowing through the first conductor and a voltage supplied to the first conductor. The semiconductor substrate is disposed on the semiconductor substrate mounting part so that the detector comes close to the first conductor.Type: ApplicationFiled: October 15, 2015Publication date: February 4, 2016Inventors: Hiroshi Saito, Ryo Wada, Yuichi Goto
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Patent number: 9189001Abstract: In general, according to one embodiment, a semiconductor device includes a device main body, a semiconductor substrate. The device main body includes a semiconductor substrate mounting part and a first conductor provided around the semiconductor substrate mounting part. The semiconductor substrate includes a DC-to-DC converter control circuit having a detector to detect at least one of a current flowing through the first conductor and a voltage supplied to the first conductor. The semiconductor substrate is disposed on the semiconductor substrate mounting part so that the detector comes close to the first conductor.Type: GrantFiled: April 26, 2013Date of Patent: November 17, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Hiroshi Saito, Ryo Wada, Yuichi Goto
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Patent number: 8981473Abstract: According to one embodiment, in a dielectric isolation substrate, an insulating film having a first thickness is provided on a semiconductor substrate. A semiconductor layer of a first conductivity type having a second thickness is provided on the insulating film. An impurity diffusion layer of a second conductivity type is provided partially in a lower portion of the semiconductor layer and is in contact with the insulating film.Type: GrantFiled: March 2, 2012Date of Patent: March 17, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Ryo Wada, Kaori Yoshioka, Norio Yasuhara, Tomoko Matsudai, Yuichi Goto
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Publication number: 20140312384Abstract: A semiconductor device includes a first base layer of a first conductivity type formed on a semiconductor layer, a second base layer of a second conductivity type formed on a first surface of the first base layer, an emitter layer formed on the second base layer, a collector layer of the second conductivity type formed above the first base layer, and a barrier layer of the first conductivity type formed between the first base layer and the second base layer. The barrier layer has a depth from the first surface that is shallower than a depth of the second base layer from the first surface and a dopant concentration that is higher than a dopant concentration of the first base layer. The semiconductor device further includes an insulating film formed on the second base layer and a gate electrode formed on the insulating film.Type: ApplicationFiled: February 6, 2014Publication date: October 23, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Ryo WADA, Kaori YOSHIOKA
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Publication number: 20130249512Abstract: In general, according to one embodiment, a semiconductor device includes a device main body, a semiconductor substrate. The device main body includes a semiconductor substrate mounting part and a first conductor provided around the semiconductor substrate mounting part. The semiconductor substrate includes a DC-to-DC converter control circuit having a detector to detect at least one of a current flowing through the first conductor and a voltage supplied to the first conductor. The semiconductor substrate is disposed on the semiconductor substrate mounting part so that the detector comes close to the first conductor.Type: ApplicationFiled: April 26, 2013Publication date: September 26, 2013Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroshi Saito, Ryo Wada, Yuichi Goto
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Patent number: 8450803Abstract: In general, according to one embodiment, a semiconductor device includes a device main body, a semiconductor substrate. The device main body includes a semiconductor substrate mounting part and a first conductor provided around the semiconductor substrate mounting part. The semiconductor substrate includes a DC-to-DC converter control circuit having a detector to detect at least one of a current flowing through the first conductor and a voltage supplied to the first conductor. The semiconductor substrate is disposed on the semiconductor substrate mounting part so that the detector comes close to the first conductor.Type: GrantFiled: September 16, 2010Date of Patent: May 28, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Hiroshi Saito, Ryo Wada, Yuichi Goto
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Publication number: 20130049111Abstract: According to one embodiment, in a dielectric isolation substrate, an insulating film having a first thickness is provided on a semiconductor substrate. A semiconductor layer of a first conductivity type having a second thickness is provided on the insulating film. An impurity diffusion layer of a second conductivity type is provided partially in a lower portion of the semiconductor layer and is in contact with the insulating film.Type: ApplicationFiled: March 2, 2012Publication date: February 28, 2013Applicant: Kabushiki Kaisha ToshibaInventors: Ryo WADA, Kaori Yoshioka, Norio Yasuhara, Tomoko Matsudai, Yuichi Goto
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Publication number: 20110156678Abstract: In general, according to one embodiment, a semiconductor device includes a device main body, a semiconductor substrate. The device main body includes a semiconductor substrate mounting part and a first conductor provided around the semiconductor substrate mounting part. The semiconductor substrate includes a DC-to-DC converter control circuit having a detector to detect at least one of a current flowing through the first conductor and a voltage supplied to the first conductor. The semiconductor substrate is disposed on the semiconductor substrate mounting part so that the detector comes close to the first conductor.Type: ApplicationFiled: September 16, 2010Publication date: June 30, 2011Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroshi Saito, Ryo Wada, Yuichi Goto
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Patent number: 6456934Abstract: A computation section (12), of a vehicle-mounted navigation system (1), which includes: a detour request receiving device (21) which receives a detour request entered by the vehicle's driver; a final-point-of-detour receiving device (22) which receives, as a final point of detour, a final point of a segment around which the driver requests to make a detour; an alternative path search device (23) which retrieves alternative paths interconnecting the current position of a vehicle and the final point of detour; and a detour link device (24) which links the final point of detour to the original route.Type: GrantFiled: October 13, 2000Date of Patent: September 24, 2002Assignee: Yazaki CorporationInventors: Takayuki Matsunaga, Ryo Wada