Patents by Inventor Ryo Yougauchi

Ryo Yougauchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    Publication number: 20160247908
    Abstract: According to an embodiment, a nonvolatile semiconductor memory device comprises: a semiconductor layer; a charge accumulation layer facing the semiconductor layer via a gate insulating layer; and a control gate electrode facing the charge accumulation layer via an inter-gate insulating layer. The charge accumulation layer comprises: a first semiconductor layer facing the semiconductor layer via the gate insulating layer; a second semiconductor layer contacting the first semiconductor layer and including carbon; and a third semiconductor layer contacting the second semiconductor layer and including carbon and boron. Concentrations of carbon and boron in the second semiconductor layer are lower than 5.0×1021 (cm?3). Concentration of carbon and boron in the third semiconductor layer are higher than 1.0×1021 (cm?3) and lower than 5.0×1021 (cm?3).
    Type: Application
    Filed: August 28, 2015
    Publication date: August 25, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Ken Komiya, Tetsuya Hayashi, Takashi Kobayashi, Yuichiro Suzuki, Ryo Yougauchi, Yoshitomo Hatakeyama