Abstract: A driving apparatus for driving a switching device is provided, the driving apparatus including: a high potential line; a high-potential-side switching control unit configured to perform switching as to whether to connect a control terminal of the switching device to the high potential line; a first resistor element located on a high-potential side and disposed in series with the high-potential-side switching control unit on a path from the control terminal of the switching device to the high potential line; a high-potential-side capacitor provided in parallel with the first resistor element on the path from the control terminal of the switching device to the high potential line; and a high-potential-side discharge control unit configured to control whether to discharge the high-potential-side capacitor.

Abstract: Provided is a semiconductor module including a stacked substrate in which a plurality of wiring layers are stacked, and a plurality of semiconductor devices mounted on a first surface of the stacked substrate, wherein the plurality of wiring layers have a first wiring layer having a high-potential wiring to which a high potential is applied, a second wiring layer having a low-potential wiring to which a low potential is applied, and a third wiring layer having a connection wiring which connects the plurality of semiconductor devices mounted on the first surface of the stacked substrate to each other, and the high-potential wiring and the low-potential wiring are at least partially overlapped with each other in a stack direction.

Abstract: A wiring board includes a hard substrate provided for each of a plurality of semiconductor elements connected in parallel and a soft substrate configured to connect the hard substrates to each other. All of the hard substrates of each of the plurality of semiconductor elements are connected by the soft substrate.

Abstract: A degradation diagnosis system includes a semiconductor element including a gate, a first main terminal that is a source or an emitter, and a second main terminal that is a drain or a collector. The degradation diagnosis system includes a push-pull circuit, a gate resistance provided in the push-pull circuit or between the push-pull circuit and the gate, and a capacitor coupled in parallel with the gate resistance. The degradation diagnosis system includes a degradation diagnosis device configured to diagnose degradation of the semiconductor element based on a capacitor voltage that is generated across the capacitor.

Abstract: According to the present disclosure, the deterioration of SiC-MOSFETs is suppressed. A drive device switches between a first SiC-MOSFET and a second SiC-MOSFET that are connected in series, with a dead time where the first SiC-MOSFET and the second SiC-MOSFET are commanded to be OFF being provided in between. This drive device includes: a first drive circuit configured to set the gate voltage of the first SiC-MOSFET, during the dead time, to a first middle voltage that is higher than a first negative power supply voltage and lower than a first threshold voltage for the first SiC-MOSFET; and a second drive circuit configured to set the gate voltage of the second SiC-MOSFET, during the dead time, to a second middle voltage that is higher than a second negative power supply voltage and lower than a second threshold voltage for the second SiC-MOSFET.

Abstract: A wiring board includes a pair of hard substrates provided for each of a plurality of semiconductor elements connected in parallel; a soft substrate provided so as to be at least partially sandwiched between all of the pairs of hard substrates; a first electrode configured to connect a control terminal of the semiconductor element and the hard substrate or the soft substrate; a second electrode configured to connect a reference potential terminal of the semiconductor element and the hard substrate or the soft substrate; a first wiring configured to connect in parallel the first electrodes of each of the plurality of semiconductor elements, at least part of the first wiring being provided on the soft substrate; and a second wiring configured to connect in parallel the second electrodes of each of the plurality of semiconductor elements, at least part of the second wiring being provided on the soft substrate.

Abstract: Provided is a semiconductor device having a switching element in which a first main electrode plate, a second main electrode plate and a control electrode plate are provided on one surface, a first main electrode being connected to the first main electrode plate, a second main electrode being connected to the second main electrode plate, and a control electrode being connected to the control electrode plate, and a semiconductor module including the semiconductor device.

Abstract: Provided is a driving apparatus that drives a switching device, the driving apparatus including a reference potential line, a first switching control unit configured to switch whether to connect a control terminal of the switching device to the reference potential line, a first resistor element arranged in series to the first switching control unit in a path from the control terminal of the switching device to the reference potential line, a first capacitor provided in parallel with the first resistor element in the path from the control terminal of the switching device to the reference potential line, and a discharge control unit configured to control whether to discharge the first capacitor.

Abstract: A driving device includes a first circuit switching between connecting and not connecting a first control line to a first positive power supply line, a second circuit switching between connecting or not connecting the first control line to a first negative power supply line, a third circuit switching between connecting and not connecting the first control line to a first reference line, a first control circuit operating the third circuit so that the first control line is connected to the first reference line during a dead time, a fifth circuit switching between connecting and not connecting a second control line to a second negative power supply line, a sixth circuit switching between connecting and not connecting the second control line to a second reference line, and a second control circuit operating the sixth circuit so that the second control line is connected to the second reference line.

Abstract: There is provided a short circuit determination apparatus including: a sensor configured to detect, in a switching device that has a control terminal, a first main terminal, and a second main terminal, a temporal change of a main current flowing between the first main terminal and the second main terminal; and a short circuit determination unit configured to determine that the switching device is short-circuited, in a case where the temporal change of the main current is larger than or equal to a first threshold value, after a first timing after a control signal for driving the control terminal is turned on.

Abstract: A short circuit detector is included in a power converter, the power converter being configured to supply power to a load via a first arm including a first semiconductor switch and a second arm including a second semiconductor switch. The short circuit detector includes a Rogowski coil; and a detection circuit configured to detect a short circuit in one of the first arm, the second arm and the load, based on a detection signal obtained from the Rogowski coil. The Rogowski coil is inserted into both: (i) first current path through which a first current flows in common with the first arm and the load, and (ii) a second current path through which a second current flows in common with the second arm and the load.

Abstract: According to the present disclosure, the deterioration of SiC-MOSFETs is suppressed. A drive device switches between a first SiC-MOSFET and a second SiC-MOSFET that are connected in series, with a dead time where the first SiC-MOSFET and the second SiC-MOSFET are commanded to be OFF being provided in between. This drive device includes: a first drive circuit configured to set the gate voltage of the first SiC-MOSFET, during the dead time, to a first middle voltage that is higher than a first negative power supply voltage and lower than a first threshold voltage for the first SiC-MOSFET; and a second drive circuit configured to set the gate voltage of the second SiC-MOSFET, during the dead time, to a second middle voltage that is higher than a second negative power supply voltage and lower than a second threshold voltage for the second SiC-MOSFET.

Abstract: A wiring board includes a pair of hard substrates provided for each of a plurality of semiconductor elements connected in parallel; a soft substrate provided so as to be at least partially sandwiched between all of the pairs of hard substrates; a first electrode configured to connect a control terminal of the semiconductor element and the hard substrate or the soft substrate; a second electrode configured to connect a reference potential terminal of the semiconductor element and the hard substrate or the soft substrate; a first wiring configured to connect in parallel the first electrodes of each of the plurality of semiconductor elements, at least part of the first wiring being provided on the soft substrate; and a second wiring configured to connect in parallel the second electrodes of each of the plurality of semiconductor elements, at least part of the second wiring being provided on the soft substrate.

Abstract: A driving apparatus for driving a switching device is provided, the driving apparatus including: a high potential line; a high-potential-side switching control unit configured to perform switching as to whether to connect a control terminal of the switching device to the high potential line; a first resistor element located on a high-potential side and disposed in series with the high-potential-side switching control unit on a path from the control terminal of the switching device to the high potential line; a high-potential-side capacitor provided in parallel with the first resistor element on the path from the control terminal of the switching device to the high potential line; and a high-potential-side discharge control unit configured to control whether to discharge the high-potential-side capacitor.

Abstract: Provided is a short-circuit determining apparatus comprising: a sensor configured to detect a time change of a main current flowing between a first main terminal and a second main terminal of a switching device having a control terminal, the first main terminal and the second main terminal; an integration unit configured to integrate an output of the sensor; a polarity determining unit configured to determine a polarity of the output of the sensor; and a short-circuit determining unit configured to determine a short-circuit of the switching device, based on a comparison result of an output of the integration unit and a short-circuit determination reference value according to a determination result of the polarity.

Abstract: A short circuit detector is included in a power converter, the power converter being configured to supply power to a load via a first arm including a first semiconductor switch and a second arm including a second semiconductor switch. The short circuit detector includes a Rogowski coil; and a detection circuit configured to detect a short circuit in one of the first arm, the second arm and the load, based on a detection signal obtained from the Rogowski coil. The Rogowski coil is inserted into both: (i) first current path through which a first current flows in common with the first arm and the load, and (ii) a second current path through which a second current flows in common with the second arm and the load.

Abstract: Provided is a driving apparatus that drives a switching device, the driving apparatus including a reference potential line, a first switching control unit configured to switch whether to connect a control terminal of the switching device to the reference potential line, a first resistor element arranged in series to the first switching control unit in a path from the control terminal of the switching device to the reference potential line, a first capacitor provided in parallel with the first resistor element in the path from the control terminal of the switching device to the reference potential line, and a discharge control unit configured to control whether to discharge the first capacitor.

Abstract: There is provided a short circuit determination apparatus including: a sensor configured to detect, in a switching device that has a control terminal, a first main terminal, and a second main terminal, a temporal change of a main current flowing between the first main terminal and the second main terminal; and a short circuit determination unit configured to determine that the switching device is short-circuited, in a case where the temporal change of the main current is larger than or equal to a first threshold value, after a first timing after a control signal for driving the control terminal is turned on.

Abstract: Provided is a short-circuit determining apparatus comprising: a sensor configured to detect a time change of a main current flowing between a first main terminal and a second main terminal of a switching device having a control terminal, the first main terminal and the second main terminal; an integration unit configured to integrate an output of the sensor; a polarity determining unit configured to determine a polarity of the output of the sensor; and a short-circuit determining unit configured to determine a short-circuit of the switching device, based on a comparison result of an output of the integration unit and a short-circuit determination reference value according to a determination result of the polarity.