Abstract: A holding table includes a holder made of porous ceramic and configured to hold a workpiece thereon. The holder contains an oxide semiconductor. The holder has a volume resistivity in the range of 1×10?8 to 1×10?6 ?·m. The oxide semiconductor is in the range of 3% by volume to 20% by volume in terms of a blending ratio. The oxide semiconductor includes tin oxide, titanium oxide, nickel oxide, or zinc oxide.

Abstract: A grinding wheel for grinding a workpiece containing a ductile material, the grinding wheel including an annular wheel base having a fixed end adapted to be fixed to a lower end of a spindle and having a free end adapted to face the workpiece to be ground, and a plurality of grindstones each shaped as a rectangular plate, disposed on the free end of the annular wheel base, and arrayed at predetermined intervals with respective longer sides disposed along circumferential directions of the wheel base. Each of the grindstones includes an electroformed grindstone shaped as a rectangular plate and made up of abrasive grains secured together by nickel plating, and has a thickness of 1 mm or smaller and a value ranging from 5 inclusive to 35 exclusive that is represented by a ratio of a height from the free end to the thickness.

Abstract: A production process of a polishing stone includes a glass sphere feeding step of feeding glass spheres into a mold, and a firing step of heating the mold with the glass spheres filled therein at a temperature higher than a softening point and lower than a melting point of the glass spheres, thereby forming a glass block as the polishing stone. In the firing step, the heating is stopped with air bubbles still dispersed and remaining in interstices between the glass spheres in a dispersed manner.

Abstract: Disclosed herein is a cutting blade including diamond abrasive grains and boron compound grains. The average grain size of the diamond abrasive grains falls within the range of 5 ?m to 50 ?m. The average grain size of the boron compound grains is greater than ? and less than or equal to ½ of the average grain size of the diamond abrasive grains.

Abstract: Disclosed herein is a cutting blade including diamond abrasive grains and boron compound grains. The average grain size of the diamond abrasive grains falls within the range of 5 ?m to 50 ?m. The average grain size of the boron compound grains is greater than 1/5 and less than or equal to 1/2 of the average grain size of the diamond abrasive grains.

Abstract: An abrasive grindstone that includes diamond abrasive grains and a boron compound and that is for grinding a workpiece, wherein the average particle diameter X of the diamond abrasive grains is in the range of 3 ?m?X?10 ?m, and the average particle diameter ratio Z of the boron compound to the diamond abrasive grains is 0.8?Z?3.0. Preferably, the workpiece is an SiC wafer, and the average particle diameter ratio Z is in the range of 1.2?Z?2.0.

Abstract: An abrasive grindstone for grinding a workpiece is disclosed. The abrasive grindstone includes diamond abrasive grains and a boron compound. The diamond abrasive grains and the boron compound are compounded at a predetermined volume ratio. The average grain size Y of the diamond abrasive grains is set to 0 ?m<Y?50 ?m. The average grain size ratio Z of the boron compound to the diamond abrasive grains is set to 0.8?Z?3.0. Preferably, the workpiece is a silicon wafer, and the average grain size ratio Z is set to 0.8?Z?2.0.