Abstract: Provided is a highly reliable semiconductor device that uses a thick passivation layer. The protective film is formed so as to cover mostly the entire surface of a semiconductor substrate, and is open only in an area of part that is above a metal wiring layer (connection area). The passivation layer includes starting from the bottom side, a first silicon nitride film that includes silicon nitride (Si3N4), a silicon oxide film that includes silicon oxide (SiO2), and an organic film (organic layer) that includes a polyimide. The silicon oxide film and organic film are formed so as to cover the electrode layer (metal wiring layer) except the top of the insulation layer and the connection area, however, the first silicon nitride film is formed only on the insulation layer and not formed on the electrode layer.

Abstract: A semiconductor device includes a semiconductor substrate, which includes: a drift region that has a first conductivity type; a body region that has a second conductivity type and is formed on the drift region; and an impurity region that has the first conductivity type and is formed inward from a surface of the body region. The semiconductor device further includes a trench, which is formed on a front surface of the semiconductor substrate and reaches the drift region; a control electrode, which is formed in the trench; an oxide film, which is formed between an inner wall of the trench and the control electrode; an electrode, which is connected to the impurity region; and a transistor, which includes a nitride film formed on the front surface of the semiconductor substrate excluding an upper side of the control electrode and a formation position of the electrode, in the semiconductor substrate.

Abstract: A semiconductor device includes a semiconductor substrate, which includes: a drift region that has a first conductivity type; a body region that has a second conductivity type and is formed on the drift region; and an impurity region that has the first conductivity type and is formed inward from a surface of the body region. The semiconductor device further includes a trench, which is formed on a front surface of the semiconductor substrate and reaches the drift region; a control electrode, which is formed in the trench; an oxide film, which is formed between an inner wall of the trench and the control electrode; an electrode, which is connected to the impurity region; and a transistor, which includes a nitride film formed on the front surface of the semiconductor substrate excluding an upper side of the control electrode and a formation position of the electrode, in the semiconductor substrate.

Abstract: A semiconductor device includes: a semiconductor substrate including: a drift region that has a first conductivity type; a body region that has a second conductivity type and is formed on the drift region; and an impurity region that has the first conductivity type and is formed in a surface of the body region; a trench, which reaches the drift region; an electric-field relaxation layer, which is formed on at least a portion of a bottom surface out of inner walls of the trench and is electrically connected to the impurity region; a control electrode, which is formed in the trench; an insulating film, which is formed between the control electrode and both the inner walls of the trench and the electric-field relaxation layer; and an electrode, which is connected to the impurity region.

Abstract: A semiconductor device includes a semiconductor base body having a first main surface and a second main surface, the first main surface and the second main surface being opposite with each other; a Schottky electrode that is disposed on the first main surface and forms a Schottky junction with the semiconductor base body; and a barrier metal layer that is brought into ohmic contact with the first main surface around the Schottky electrode and covers a side surface of the Schottky electrode.

Abstract: Provided is a semiconductor device that is good in switching characteristics and high in breakdown voltage in off state. The geometry of a corner of a trench T is provided with a rounded shape (a curved face geometry having a radius of curvature of R1) under the depth P1. In addition, assuming the thickness of a gate oxide film 21 on the side wall of the trench T in a right-left direction in figure is T0, and the thickness of the gate oxide film 21 in the central portion of the bottom part of the trench T in a vertical direction in figure is T1, the gate oxide film 21 is formed so as to meet T1>T0. The gate oxide film 21 is provided with a rounded shape (having a radius of curvature of R2) under the depth P2. In addition, the expression R2?R1 is met.

Abstract: A semiconductor device of trench gate type is provided that has achieved both large on-current and high off-state breakdown voltage. Around trench T and between it and electric field relaxation p-layer 16, low resistance n-layer 17 is provided. Low resistance n-layer 17 is formed deeper than trench T, and shallower than electric field relaxation p-layer 16, being connected to n?-layer (drift layer) 12 just thereunder, and thus low resistance n-layer 17 and n?-layer 12 are integrated to form a drift layer. Although low resistance n-layer 17 is n-type as is n?-layer 12, donor concentration thereof is set higher than that of n?-layer 12, thereby low resistance n-layer 17 having a resistivity lower than that of n?-layer 12. This low resistance n-layer 17 is provided in on-current path (between electric field relaxation p-layer 16 and trench T), whereby low resistance n-layer 17 can lower the resistance to on-current.

Abstract: A semiconductor device includes: a nitride group semiconductor functional layer including a second nitride group semiconductor region on a first nitride group semiconductor region where a two-dimensional carrier gas layer is made, the second nitride group semiconductor region functioning as a barrier layer; a first main electrode electrically connected to one end of the two-dimensional carrier gas layer; a second main electrode electrically connected to the other end of the two-dimensional carrier gas layer; and a metal oxide film placed between the first and second main electrodes, electrically connected to the first main electrode, the first main electrode extends over an upper surface of the metal oxide film.

Abstract: A semiconductor device include: a nitride group semiconductor functional layer including a second nitride group semiconductor region on a first nitride group semiconductor region where a two-dimensional carrier gas layer is made, the second nitride group semiconductor region functioning as a barrier layer; a first main electrode electrically connected to one end of the two-dimensional carrier gas layer; a second main electrode electrically connected to the other end of the two-dimensional carrier gas layer; and metal oxide films placed between the first and second main electrodes, electrically connected to the first main electrode, and reducing a carrier density of the two-dimensional carrier gas layer.