Abstract: An electronic endoscope system includes an electronic endoscope, a processor that includes an evaluation unit, and a monitor. The evaluation unit includes an image evaluation value calculation unit that calculates an image evaluation value indicating an intensity of lesion in the living tissue for each of a plurality of images of the living tissue, and a lesion evaluation unit that calculates a representative evaluation value of the image evaluation value from the image evaluation values of the plurality of images corresponding to a plurality of sections for each of the plurality of sections in which a region of the organ is divided using information of an imaging position in the organ whose image is captured and evaluates an extent of the lesion in a depth direction inside the organ using the representative evaluation value.

Abstract: Signal relay board for power semiconductor modules enabling electrical connection between power semiconductor modules and a drive unit driving same. A first wire layer, a second wire layer, a third wire layer, and a fourth wire layer of a multiphase wire portion are assigned with a first control wire layer serving as a path to provide a control signal to a first semiconductor device of the modules, a first ground wire layer serving as a path to provide a ground potential to a low potential side terminal of the first semiconductor device of the semiconductor modules, a second control wire layer serving as a path to provide a control signal to a second semiconductor device of the modules, and a second ground wire layer serving as a path to provide a ground potential to the second semiconductor device of the modules.

Abstract: The DC-DC converter includes a series circuit of switching elements; a series circuit of capacitors; diodes respectively connected between one end of each of the series circuits; a series circuit constituted by a DC power source, a circuit breaker, and reactors; and a control circuit. The control circuit steps up a voltage of the DC power source through a chopper operation and causes the stepped up voltage to be outputted from both ends of the capacitor series circuit. When determining that a short circuit has occurred in one of the switching elements, the control circuit turns the other switching element that is free from the short circuit ON before the circuit breaker opens, thereby overriding and terminating the chopper operation and suppressing overvoltage caused by the short circuit.

Abstract: A semiconductor device is provided that includes a semiconductor chip having a main terminal and a control terminal, a main connection pin electrically connected to the main terminal, and a control connection pin electrically connected to the control terminal and having an electrical resistance higher than that of the main connection pin. The control connection pin may be a control internal connection pin or a control external connection pin. The control connection pin may include material having an electrical resistivity higher than that of material of the main connection pin. The control connection pin may have a shape different from that of the main connection pin.

Abstract: Signal relay board for power semiconductor modules enabling electrical connection between power semiconductor modules and a drive unit driving same. A first wire layer, a second wire layer, a third wire layer, and a fourth wire layer of a multiphase wire portion are assigned with a first control wire layer serving as a path to provide a control signal to a first semiconductor device of the modules, a first ground wire layer serving as a path to provide a ground potential to a low potential side terminal of the first semiconductor device of the semiconductor modules, a second control wire layer serving as a path to provide a control signal to a second semiconductor device of the modules, and a second ground wire layer serving as a path to provide a ground potential to the second semiconductor device of the modules.

Abstract: A chopper device includes: a series circuit connecting at one end to a positive pole of a DC power source and having a breaker and a reactor; a series circuit connected between another end of the stated series circuit and a negative pole of the DC power source and having switches; a series circuit connected in parallel to the switch and having a diode and a capacitor; and a series circuit connected in parallel to the switch and having a diode and a capacitor. The chopper device outputs a DC voltage at three potentials from both ends and a midpoint of a series circuit having the capacitors by turning the switches ON/OFF. The chopper device further includes other switches connected in parallel to the switches. When a short-circuit fault is presumed to have occurred in the switch, the other switch is turned ON before interruption is performed by the breaker.

Abstract: A chopper device includes: a series circuit connecting at one end to a positive pole of a DC power source and having a breaker and a reactor; a series circuit connected between another end of the stated series circuit and a negative pole of the DC power source and having switches; a series circuit connected in parallel to the switch and having a diode and a capacitor; and a series circuit connected in parallel to the switch and having a diode and a capacitor. The chopper device outputs a DC voltage at three potentials from both ends and a midpoint of a series circuit having the capacitors by turning the switches ON/OFF. The chopper device further includes other switches connected in parallel to the switches. When a short-circuit fault is presumed to have occurred in the switch, the other switch is turned ON before interruption is performed by the breaker.

Abstract: A power unit cooling body includes a base part on which a first power semiconductor module and a second power semiconductor module are mounted. A cooling body is mounted on a side of the base part opposite the first power semiconductor module and the second power semiconductor module. A height of a fin of the cooling body is configured to be made shorter on the windward side than on the leeward side.

Abstract: The DC-DC converter includes a series circuit of switching elements; a series circuit of capacitors; diodes respectively connected between one end of each of the series circuits; a series circuit constituted by a DC power source, a circuit breaker, and reactors; and a control circuit. The control circuit steps up a voltage of the DC power source through a chopper operation and causes the stepped up voltage to be outputted from both ends of the capacitor series circuit. When determining that a short circuit has occurred in one of the switching elements, the control circuit turns the other switching element that is free from the short circuit ON before the circuit breaker opens, thereby overriding and terminating the chopper operation and suppressing overvoltage caused by the short circuit.

Abstract: A semiconductor multi-layer substrate includes a substrate, a buffer layer formed on the substrate and made of a nitride semiconductor, an electric-field control layer formed on the buffer layer and made of a nitride semiconductor, the electric-field control layer having conductivity in the substrate's lateral direction, an electric-field relaxation layer formed on the electric-field control layer and made of a nitride semiconductor, and an active layer formed on the electric-field relaxation layer and made of an nitride semiconductor. A resistance in the substrate's lateral direction of the electric-field control layer is equal to or smaller than 10 times a resistance of the electric-field relaxation layer, and a ratio of an electric field share between the electric-field relaxation layer and the buffer layer is controlled by a ratio between a thickness of the electric-field relaxation layer and a thickness of the buffer layer.

Abstract: A semiconductor multi-layer substrate includes a substrate, a buffer layer formed on the substrate and made of a nitride semiconductor, an electric-field control layer formed on the buffer layer and made of a nitride semiconductor, the electric-field control layer having conductivity in the substrate's lateral direction, an electric-field relaxation layer formed on the electric-field control layer and made of a nitride semiconductor, and an active layer formed on the electric-field relaxation layer and made of an nitride semiconductor. A resistance in the substrate's lateral direction of the electric-field control layer is equal to or smaller than 10 times a resistance of the electric-field relaxation layer, and a ratio of an electric field share between the electric-field relaxation layer and the buffer layer is controlled by a ratio between a thickness of the electric-field relaxation layer and a thickness of the buffer layer.

Abstract: A method for manufacturing a semiconductor wafer includes the steps of forming, on a first principal surface of a substrate, a compound semiconductor layer different in kind from the substrate, and removing, by etching, a part of the compound semiconductor layer. The part of the compound semiconductor layer is formed on an outer peripheral portion of the first principal surface of the substrate.

Abstract: An organic EL element having at least a cathode, a cathode buffer layer comprising a HAT derivative, an electron injection transport layer and a light-emitting layer in that order from a substrate side. The organic EL element of the present invention provides the particular advantages of (1) preventing damage to the electron injection transport performance of the electron injection transport layer due to oxygen and/or moisture adsorbed on the cathode, thereby ensuring a supply of electrons to the light-emitting layer, (2) reducing the drive voltage of the organic EL element, (3) preventing an increase in the drive voltage to provide the same current density over the course of the drive time, and (4) controlling the occurrence of current leaks and pixel defects, thereby improving the quality and manufacturing yield of the organic EL element.

Abstract: An organic EL device is disclosed in which the amount of dopant added is easily controlled, and which is able to achieve stable light emission that does not depend on the current density of electrical current passing through the device. The organic electroluminescent device includes a first electrode, an organic electroluminescent layer having a hole injecting and transporting layer, an organic emissive layer and an electron injecting and transporting layer, and a second electrode. The organic emissive layer has an inner layer interposed between two outer layers. The outer layers contact the hole injecting and transporting layer and the electron injecting and transporting layer, respectively. The two outer layers are composed of a host material and a first fluorescent dopant, and the inner layer is composed of a host material, a first fluorescent dopant and a second fluorescent dopant. The first fluorescent dopant has a larger bandgap than the second fluorescent dopant.

Abstract: A method for manufacturing a vapor-deposited film having a high-resolution pattern, without using a metal mask that makes it difficult to realize high resolution or an expensive laser scanning device. A patterned vapor-deposited film is manufactured by a method including: preparing a deposition panel containing a substrate, a plurality of heating elements, and a deposition material layer formed on the plurality of heating elements, the deposition material layer forming the outermost surface; disposing the deposition panel and a device substrate so that the deposition material layer faces the device substrate; and causing at least some of the plurality of heating elements to generate heat, selectively evaporating the deposition material layer that is positioned on the heating elements that have generated heat, and vapor depositing on a surface of the device substrate to form a vapor-deposited film.