Abstract: A wide gap semiconductor device comprises a first conductive-type semiconductor layer (32); a second conductive-type region (41), (42) that is provided on the first conductive-type semiconductor layer (32); a first electrode (1), of which a part is disposed on the second conductive-type region (41), (42) and the other part is disposed on the first conductive-type semiconductor layer (32); an insulating layer (51), (52), (53) that is provided adjacent to the first electrode (10) on the first conductive-type semiconductor layer (32) and that extends to an end part of the wide gap semiconductor device; and a second electrode (20) that is provided between the first electrode (10) and the end part of the wide gap semiconductor device and that forms a schottky junction with the first conductive-type semiconductor layer (32).

Abstract: A wide gap semiconductor device comprises a first conductive-type semiconductor layer (32); a second conductive-type region (41), (42) that is provided on the first conductive-type semiconductor layer (32); a first electrode (1), of which a part is disposed on the second conductive-type region (41), (42) and the other part is disposed on the first conductive-type semiconductor layer (32); an insulating layer (51), (52), (53) that is provided adjacent to the first electrode (10) on the first conductive-type semiconductor layer (32) and that extends to an end part of the wide gap semiconductor device; and a second electrode (20) that is provided between the first electrode (10) and the end part of the wide gap semiconductor device and that forms a schottky junction with the first conductive-type semiconductor layer (32).

Abstract: A third insulating layer is formed in a periphery region of a substrate over a first surface (main surface) of the substrate so as to straddle a second semiconductor layer closest to a guard ring layer and a second semiconductor layer closest to the second semiconductor layer. In other words, the third insulating layer is formed to cover a portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers. Thereby, the third insulating layer electrically insulates the metal layer from the portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers.

Abstract: A third insulating layer is formed in a periphery region of a substrate over a first surface (main surface) of the substrate so as to straddle a second semiconductor layer closest to a guard ring layer and a second semiconductor layer closest to the second semiconductor layer. In other words, the third insulating layer is formed to cover a portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers. Thereby, the third insulating layer electrically insulates the metal layer from the portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers.

Abstract: In a shock absorbing propeller shaft apparatus for a motor vehicle, a stop ring is fitted to an annular groove provided in an outer periphery of an inner shaft end close to a base end with respect to a portion to which an inner race of a constant velocity joint in the inner shaft end is fitted, a collar main body of a collar is inserted to an outer periphery between a portion to which the inner race of the constant velocity joint in the inner shaft end is fitted and a portion to which the stop ring is fitted, in the outer periphery of the inner shaft end, and a flange portion protruding out in an axial direction from an outer diameter side of one end of the collar main body is attached to cover an outer periphery of the stop ring.

Abstract: In a shock absorbing propeller shaft apparatus for a motor vehicle, a stop ring is fitted to an annular groove provided in an outer periphery of a shaft-like inner close to a base end with respect to a portion to which an inner race of a constant velocity joint in the shaft-like inner is fitted, a collar main body of a collar is inserted to an outer periphery between a portion to which the inner race of the constant velocity joint in the shaft-like inner is fitted and a portion to which the stop ring is fitted, in the outer periphery of the shaft-like inner, and a flange portion protruding out in an axial direction from an outer diameter side of one end of the collar main body is attached to cover an outer periphery of the stop ring.