Abstract: A charge port device includes a charge port provided in a port accommodation recess and a lid for concealing the port accommodation recess. A latch is provided in the port accommodation recess on an opposite side to a lid hinge with respect to the charge port. A slit is formed between a surface of a vehicle body and an outer circumferential edge of the lid while the lid is closed. A lamp is provided at a position in the port accommodation recess between the latch and the slit on an opposite side to the lid hinge with respect to the charge port and the position is not visible from outside while the lid is closed. Formed is a light-guiding reflection path that guides a light emitted from the lamp toward the above-mentioned slit as an indirect light by reflecting the light while the lid is closed.

Abstract: Disclosed are a fluorescence microscope light source apparatus and a fluorescence microscope capable of obtaining high-luminance light in a wavelength of 500 to 550 nm and having reduced background noise when a sample is observed. The fluorescence microscope light source apparatus to be installed in a fluorescence microscope including an illumination light bandpass filter includes: a laser diode that emits blue light as excitation light; a phosphor that converts the excitation light from the laser diode into illumination fluorescence with a wavelength region of 500 to 550 nm; an optical system that extracts the illumination fluorescence from the phosphor; a first condenser lens that condenses the excitation light onto the phosphor; a light guide body having one end face on which the illumination fluorescence is incident and the other end face from which the illumination fluorescence exits; and a second condenser lens that condenses the illumination fluorescence onto the one end face of the light guide body.

Abstract: Disclosed are a fluorescence microscope light source apparatus and a fluorescence microscope capable of obtaining high-luminance light in a wavelength of 500 to 550 nm and having reduced background noise when a sample is observed. The fluorescence microscope light source apparatus to be installed in a fluorescence microscope including an illumination light bandpass filter includes: a laser diode that emits blue light as excitation light; a phosphor that converts the excitation light from the laser diode into illumination fluorescence with a wavelength region of 500 to 550 nm; an optical system that extracts the illumination fluorescence from the phosphor; a first condenser lens that condenses the excitation light onto the phosphor; a light guide body having one end face on which the illumination fluorescence is incident and the other end face from which the illumination fluorescence exits; and a second condenser lens that condenses the illumination fluorescence onto the one end face of the light guide body.

Abstract: [Problem] Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor including: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the susceptor; a raw material gas-introducing portion for supplying a raw material gases from the central portion of the reactor toward the peripheral portion of the reactor; and a reacted gas-discharging portion. Even when crystal growth is conducted on the surfaces of a large number of large-aperture substrates, the vapor phase epitaxy apparatus can eject each raw material gas at an equal flow rate for any angle, and can suppress the decomposition and crystallization of the raw material gases on the opposite face of the susceptor.

Abstract: [Summary] [Problem] Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor including: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the susceptor; a raw material gas-introducing portion for supplying a raw material gases from the central portion of the reactor toward the peripheral portion of the reactor; and a reacted gas-discharging portion. Even when crystal growth is conducted on the surfaces of a large number of large-aperture substrates, the vapor phase epitaxy apparatus can eject each raw material gas at an equal flow rate for any angle, and can suppress the decomposition and crystallization of the raw material gases on the opposite face of the susceptor.

Abstract: Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor capable of improving the uniformity of the film thickness distribution, and reaction rate, of a semiconductor. The vapor phase epitaxy apparatus of a group III nitride semiconductor includes: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the susceptor; a raw material gas-introducing portion for supplying a raw material gas to the reactor; and a reacted gas-discharging portion. In the vapor phase epitaxy apparatus of a group III nitride semiconductor, the raw material gas-introducing portion includes a first mixed gas ejection orifice capable of ejecting a mixed gas obtained by mixing three kinds, i.e.

Abstract: Provided is a vapor phase epitaxy apparatus for a III nitride semiconductor, including a susceptor for holding a substrate, an opposite face of the susceptor, a heater for heating the substrate, a raw material gas-introducing portion provided at the central portion of the susceptor, and a reactor formed of a gap between the susceptor and the opposite face of the susceptor, in which a distance between the installed substrate and the opposite face of the susceptor is extremely narrow, and a constitution through which a coolant is flown is provided for the opposite face of the susceptor. The vapor phase epitaxy apparatus further includes, on the opposite face of the susceptor, a fine porous portion for ejecting an inert gas toward the inside of the reactor and a constitution for supplying the inert gas to the fine porous portion.