Abstract: The occurrence of a short-channel effect is suppressed. A semiconductor device includes a semiconductor layer having an upper surface portion, a lower surface portion, and a side surface portion, and a field-effect transistor in which a channel forming portion is provided in the semiconductor layer. The field effect transistor includes a gate electrode provided in the channel forming portion of the semiconductor layer over the upper surface portion and the side surface portion of the semiconductor layer with a gate insulating film interposed therebetween, and a pair of main electrode regions provided on an outer side of the semiconductor layer in a channel length direction of the channel forming portion and separated from each other with the channel forming portion interposed therebetween. Each of the pair of main electrode regions includes a conductor layer that is provided in contact with the side surface portion of the semiconductor layer and that is in a layer different from the semiconductor layer.

Abstract: Provided is a light detection device which allows influence on adjacent pixels to be reduced. The light detection device includes a first substrate portion, a second substrate portion, and a through via. The first substrate portion has a pixel configured to photoelectrically convert incident light. The second substrate portion has a readout circuit configured to output a pixel signal based on charge output from the pixel to a signal line. The through via configured to connect the first substrate portion and the second substrate portion. The pixel has a floating diffusion configured to temporarily retain charge generated by photoelectric conversion. The readout circuit has a first pixel transistor connected to the floating diffusion through the through via and a second pixel transistor connected to the first pixel transistor and the signal line.

Abstract: A magnetic resonance imaging apparatus includes sequence controlling circuitry configured: to obtain, during a time period after excitation of a first nuclide in a hyperpolarized state but no later than before obtainment of a first magnetic resonance signal from the first nuclide, a second magnetic resonance signal from a second nuclide that is different from the first nuclide and is in a non-hyperpolarized state, by exciting the second nuclide; and to control each of gradient magnetic field waveforms so as to cause both a first sum indicating a sum of application amounts of a gradient magnetic field related to the excitation of the second nuclide and a second sum indicating a sum of application amounts of a gradient magnetic field related to the obtainment of the second magnetic resonance signal to be close to zero, no later than before the obtainment of the first magnetic resonance signal.

Abstract: A magnetic resonance imaging apparatus includes sequence controlling circuitry configured: to obtain, during a time period after excitation of a first nuclide in a hyperpolarized state but no later than before obtainment of a first magnetic resonance signal from the first nuclide, a second magnetic resonance signal from a second nuclide that is different from the first nuclide and is in a non-hyperpolarized state, by exciting the second nuclide; and to control each of gradient magnetic field waveforms so as to cause both a first sum indicating a sum of application amounts of a gradient magnetic field related to the excitation of the second nuclide and a second sum indicating a sum of application amounts of a gradient magnetic field related to the obtainment of the second magnetic resonance signal to be close to zero, no later than before the obtainment of the first magnetic resonance signal.

Abstract: A semiconductor device and an imaging apparatus capable of suppressing short-channel effects are provided. The semiconductor device includes a semiconductor substrate and a transistor provided on the semiconductor substrate. The transistor includes a semiconductor region having a main surface and a first side surface intersecting the main surface, a gate insulating film provided on the semiconductor region, a gate electrode provided on the gate insulating film, a channel region covered with the gate insulating film and the gate electrode in the semiconductor region, and first-conductivity-type source and drain regions adjacent to the channel region. In a planar view from the normal direction of the main surface, the semiconductor region includes a first portion extended in a first direction, and a second portion extended from the first portion in a second direction intersecting the first direction.

Abstract: A magnetic resonance imaging apparatus according to an embodiment includes processing circuitry configured, on a basis of one or both of (A) a parameter related to applying one of inversion and flip pulses and (B) an intensity of a slice selecting gradient magnetic field applied together with the one of the pulses in relation to selecting a slice to which the one of the pulses is applied, to determine one or both of (A) a parameter related to applying the other of the inversion and (B) flip pulses; and an intensity of the slice selecting gradient magnetic field applied together with the other of the pulses in relation to selecting a slice to which the other of the pulses is applied.

Abstract: A magnetic resonance imaging apparatus according to an embodiment includes processing circuitry configured, on a basis of one or both of (A) a parameter related to applying one of inversion and flip pulses and (B) an intensity of a slice selecting gradient magnetic field applied together with the one of the pulses in relation to selecting a slice to which the one of the pulses is applied, to determine one or both of (A) a parameter related to applying the other of the inversion and (B) flip pulses; and an intensity of the slice selecting gradient magnetic field applied together with the other of the pulses in relation to selecting a slice to which the other of the pulses is applied.

Abstract: An embodiment of a silicon carbide semiconductor device includes one or more inner cells each having a MOSFET and one or more outer peripheral cells that does not have a MOSFET structure, and the area (surface area) of the p+ contact region of each of the outermost peripheral cells is less than the surface area of an p+ contact region of each of the inner cells, for example, so that a unit total resistance of p+ contact regions of the outermost peripheral cells, as measured in a depth direction of the semiconductor substrate with respect to a unit area in a surface of the semiconductor substrate, is greater than a unit total resistance of the p+ contact regions of the inner cells, as measured in the depth direction of the semiconductor substrate with respect to the unit area in the surface of the semiconductor substrate.

Abstract: An embodiment of a silicon carbide semiconductor device includes one or more inner cells each having a MOSFET and one or more outer peripheral cells that does not have a MOSFET structure, and the area (surface area) of the p+ contact region of each of the outermost peripheral cells is less than the surface area of an p+ contact region of each of the inner cells, for example, so that a unit total resistance of p+ contact regions of the outermost peripheral cells, as measured in a depth direction of the semiconductor substrate with respect to a unit area in a surface of the semiconductor substrate, is greater than a unit total resistance of the p+ contact regions of the inner cells, as measured in the depth direction of the semiconductor substrate with respect to the unit area in the surface of the semiconductor substrate.

Abstract: The semiconductor device includes a switching arm unit in which first and second wide bandgap semiconductor elements, each having a body diode, are connected in series between a positive line and a negative line; a current detecting unit that detects a current in at least a wide bandgap semiconductor element in which a flyback current flows; and a semiconductor element driving unit that drives the first and second wide bandgap semiconductor elements. When driving one of the wide bandgap semiconductor elements, the semiconductor element driving unit determines, by referring to a fault inhibiting characteristic curve, whether a flyback current detection value of the other wide bandgap semiconductor elements falls within a fault growth region or a fault inhibiting region, and when a result of the determination indicates that the flyback current detection value is within the fault growth region, inhibits a current flowing in the one wide bandgap semiconductor element.

Abstract: The semiconductor device includes a switching arm unit in which first and second wide bandgap semiconductor elements, each having a body diode, are connected in series between a positive line and a negative line; a current detecting unit that detects a current in at least a wide bandgap semiconductor element in which a flyback current flows; and a semiconductor element driving unit that drives the first and second wide bandgap semiconductor elements. When driving one of the wide bandgap semiconductor elements, the semiconductor element driving unit determines, by referring to a fault inhibiting characteristic curve, whether a flyback current detection value of the other wide bandgap semiconductor elements falls within a fault growth region or a fault inhibiting region, and when a result of the determination indicates that the flyback current detection value is within the fault growth region, inhibits a current flowing in the one wide bandgap semiconductor element.