Abstract: An integrated circuit includes a first detection element that detects a temperature of an object based on infrared light reflected from the object and a second detection element that detects an image of the object based on visible light reflected from the object on the same substrate.

Abstract: A monitoring system at least includes a measuring device that measures a temperature distribution based on infrared light and a monitoring device that measures image information based on visible light, in which the monitoring device includes an acquisition unit that acquires attribute information of a monitored target extracted based on the image information and fever information of the monitored target from the temperature distribution in a time series and an analysis unit that analyzes the attribute information and a change of the fever information and predicts a transition of the fever information based on the analysis result.

Abstract: An integrated circuit includes a first detection element that detects a temperature of an object based on infrared light reflected from the object and a second detection element that detects an image of the object based on visible light reflected from the object on the same substrate.

Abstract: A thin, lightweight, and highly reliable energy ray detector that enables high-speed reading is provided. An energy ray detector (1) includes TFTs (20) that are arranged in a grid pattern and that each have an active layer formed of a semiconductor having an electrical property changing in accordance with the amount of applied energy ray radiation, and a property detection circuit unit (5) and a controller (60) that detect information regarding the energy ray radiation from changes in the electrical property of the TFTs (20).

Abstract: A thin, lightweight, and highly reliable energy ray detector that enables high-speed reading is provided. An energy ray detector (1) includes TFTs (20) that are arranged in a grid pattern and that each have an active layer formed of a semiconductor having an electrical property changing in accordance with the amount of applied energy ray radiation, and a property detection circuit unit (5) and a controller (60) that detect information regarding the energy ray radiation from changes in the electrical property of the TFTs (20).

Abstract: Variation in threshold voltages in a device operation is reduced. An insulator layer which is disposed to be opposed to a channel region 41 of a MOS transistor and is formed to have a laminated structure of a silicon nitride film 83 and a silicon oxide film 83 and an inverted signal input unit which inputs a signal obtained by inverting an input signal inputted into a source region 43 of a MOS transistor into a channel region 41 are provided and the inverted signal input unit includes another gate electrode 82 which is formed on an extended portion of the channel region 41 of the gate electrode 81 in a manner to be adjacent to the gate electrode 81 of the MOS transistor and a CMOS circuit 80 which inverts an input signal inputted into the source region 43 of the MOS transistor in accordance with an input value of the input signal and inputs a signal obtained through inversion in the CMOS circuit 80 into another gate electrode 82.

Abstract: Variation in threshold voltages in a device operation is reduced. An insulator layer which is disposed to be opposed to a channel region 41 of a MOS transistor and is formed to have a laminated structure of a silicon nitride film 83 and a silicon oxide film 83 and an inverted signal input unit which inputs a signal obtained by inverting an input signal inputted into a source region 43 of a MOS transistor into a channel region 41 are provided and the inverted signal input unit includes another gate electrode 82 which is formed on an extended portion of the channel region 41 of the gate electrode 81 in a manner to be adjacent to the gate electrode 81 of the MOS transistor and a CMOS circuit 80 which inverts an input signal inputted into the source region 43 of the MOS transistor in accordance with an input value of the input signal and inputs a signal obtained through inversion in the CMOS circuit 80 into another gate electrode 82.

Abstract: According to the present invention, anode-side ends of LED arrays (1011) and (1012) are connected to an identical point. A constant current circuit (1003) drives the LED array (1011) by a constant current, whereas, a constant current control circuit (3) drives the LED array (1012) by a constant current and by pulses.

Abstract: According to the present invention, anode-side ends of LED arrays (1011) and (1012) are connected to an identical point. A constant current circuit (1003) drives the LED array (1011) by a constant current, whereas, a constant current control circuit (3) drives the LED array (1012) by a constant current and by pulses.