Abstract: A position measuring apparatus includes a light source 1, an illumination optical system 100, a light-reception optical system 400 and a light-receiving unit 500. Illuminating beam emitted from the light source 1 is diffracted by a two-dimensional pattern on an object 10, and then enters the light-reception optical system 400. The light-receiving unit 500 receives diffracted lights consisting of a combination of a higher-order diffracted light appearing on the object side for the zero-order diffracted light in the receive diffracted lights with a zero-order diffracted light different in frequency from the higher-order diffracted light and another combination of higher-order diffracted lights different in frequency from one another and appearing on the object side for the zero-order diffracted light, thereby forming a position measuring interference measurement signal within the plane including the object.

Abstract: An object of the present invention is to provide a charged particle exposure system which can prevent the shift of an orbit of an electron beam in the vicinity of a periphery of a substrate when drawing a pattern onto the substrate, thereby making it possible to draw the pattern with high accuracy.

Abstract: A monolithic semiconductor laser array includes an insulating substrate, a plurality of semiconductor layers epitaxially grown on the substrate and forming a laser structure, and at least one groove transverse to the substrate extending through the semiconductor layers into the substrate, dividing the semiconductor laser structure into at least two mutually isolated parts. Within each of the isolated parts of the semiconductor laser structure, a first groove includes a side wall transverse to the substrate and forming a first resonator facet of a semiconductor laser. A second groove in each of the parts includes a second side wall transverse to the substrate and opposite the first side wall, forming a second resonator facet of the semiconductor laser in that part.

Abstract: A semiconductor light emitting device includes a semiconductor light emitting element mounted on a package stem via a radiating heatsink block, the light emitting point of the light emitting element being positioned on the central axis of the stem and at or near the center of mass of the heatsink block. Another light emitting device includes a light emitting element mounted on a stem via a heatsink block, the light emitting point of the element being positioned on the central axis of the stem with only a portion of a lower surface of the heatsink block close to the central axis of the stem attached to the stem. The movement of the light emitting point with temperature variations is suppressed. Another light emitting device includes a laser chip element mounted on a package stem via a heatsink block, the laser chip element being mounted on the heatsink block so that the emitted light forms an angle .theta.

Abstract: A registration system for registering a target registration object with respect to a predetermined reference position by using a registration mark formed on the target registration object includes the intensity measurement step of receiving a mark image for a predetermined period of time by a storage type sensor while an area of the target registration object which includes the mark is illuminated, the storage type sensor having elements whose positional relationship is known with respect to the mark image, the process of obtaining a center position of the mark image on the storage type sensor in a positioning direction in accordance with outputs from the elements of the storage type sensor obtained in the intensity measurement step, the distance calculation step of calculating a distance between the reference position and the center position obtained by the process, and the moving step of moving the target registration object by a distance corresponding to the distance obtained in the distance calculation st

Abstract: A method and an apparatus for measuring a displacement between two objects. Corresponding pairs of regions of the two objects each have at least one diffraction grating which generate two-dimensionally distributed diffracted light beams. These light beams are diffracted and caused to interfere with each other in the paired regions, whereby two-dimensionally distributed diffracted interference light beams are emitted. A light beam of a specific order is detected from each of these diffracted interference light beams, and is converted into a beat signal. The displacement is obtained in accordance with the phase difference between these beat signals.

Abstract: A first diffraction grating is formed on a mask, and a second diffraction grating is formed on a wafer. Two light beams having slightly different frequencies interfere with each other and are diffracted as they travel through the first diffraction grating, are reflected by the second diffraction grating, and again pass through the first diffraction grating. As a result, they change into thrice diffracted light beams. The diffracted light beams are combined into a detection light beam which has a phase shift .phi..sub.A representing the displacement between the wafer and the mask, or a phase shift .phi..sub.G representing the gap between the wafer and the mask. The detection light beam is converted into a detection signal. The phase difference between the detection signal and a reference signal having no phase shifts are calculated, thus determining phase shift .phi..sub.A or .phi..sub.G. The displacement or the gap is determined from the phase shift.

Abstract: A first diffraction grating is formed on a mask, and a second diffraction grating is formed on a wafer. Two light beams having slightly different frequencies interfere with each other and are diffracted as they travel through the first diffraction grating, are reflected by the second diffraction grating, and again pass through the first diffraction grating. As a result, they change into thrice diffracted light beams. The diffracted light beams are combined into a detection light beam which has a phase shift .phi..sub.A representing the displacement between the wafer and the mask, or a phase shift .phi..sub.G representing the gap between the wafer and the mask. The detection light beam is converted into a detection signal. The phase difference between the detection signal and a reference signal having no phase shifts are calculated, thus determining phase shift .phi..sub.A or .phi..sub.G. The displacement or the gap is determined from the phase shift.

Abstract: According to this invention, a method and apparatus for setting a gap to a predetermined distance between a mask and a wafer facing each other, are arranged as follows. First and second diffraction grating are formed on a mask and a wafer. The first diffraction grating is one-dimensional type and has parallel bars extending in a predetermined direction. The second diffraction grating is one-dimensional type and has parallel bars extending in a direction perpendicular to the predetermined direction. The second diffraction grating may be two-dimensional type having cross-bars. Laser beam is radiated from a light source onto the first diffraction grating. The light beams diffracted and transmitted through the first diffraction grating are transferred to the second diffraction grating. The light beams diffracted and reflected by the second diffraction grating are transferred to the first diffraction grating. The light beams are diffracted and transmitted through the first diffraction grating.

Abstract: A method of manufacturing a semiconductor light emitting device comprises the steps of: forming a p-InP first semiconductor layer (11) on a p-type semiconductor substrate (10) by a first growth or diffusion; forming a groove (15) shaped like a stripe in the substrate and the first semiconductor layer; and successively forming a p-InP second semiconductor layer (12), a p or n-InGaAsP third semiconductor layer (13) and an n-InP fourth semiconductor layer (14) in the regions including the inner and outer portions of the grooves by the second growth. In this manufacturing method, the carrier concentration of the p-type impurity in the first semiconductor layer is selected to be higher than the carrier concentration in the fourth semiconductor layer.

Abstract: In order to prevent the output characteristic of a semiconductor laser from being saturated at higher temperatures due to the thyristor effect of a combination of the semiconductor layers thereof, an intermediate layer of a conductivity type the same as that of the substrate and opposite that of the first semiconductor layer is provided between the substrate and the first layer. Due to the relatively low carrier density of the intermediate layer, oscillation can be stably carried out even at higher temperatures without triggering the thyristor structure.

Abstract: A first growth melting solution which has been used for the growth of a first layer is first replaced with a third melting solution and then with a second growth melting solution for the growth of a second layer. Using the third melting solution of a composition intermediate the first and second melting solutions effectively suppresses supersaturate or unsaturation of the solute during replacement of the melting solutions.