Abstract: There is provided a control valve that is provided on a flow path along which flows a source fluid which is a liquid source or a source gas obtained by vaporizing a liquid source, a pressure sensor that is provided on a downstream side of the control valve, a flow rate sensor that measures a flow rate of the source fluid, and a valve controller that, while reducing a deviation between a set pressure and a measured pressure measured by the pressure sensor, controls the control valve such that a measured flow rate measured by the flow rate sensor is equal to or less than a limit flow rate which is a flow rate that is set based on an upper limit flow rate at which the liquid source can still be vaporized.

Abstract: A solid-state image pick-up unit comprises: a semiconductor substrate comprising an area in which a photoelectric converting portion is formed; and an electric charge transfer portion that transfers an electric charge formed by the photoelectric converting portion, wherein the electric charge transfer portion comprises: an electric charge transfer electrode including a first layer electrode and a second layer electrode; and a gate oxide film, the gate oxide film comprises a second gate oxide film formed under the second layer electrode, the second gate oxide film comprising an ONO film which comprises a SiO film, a SiN film and a SiO film in this order, and the second gate oxide film is continuously formed to cover whole of a region between the first layer electrode and the second layer electrode and a region under the second layer electrode.

Abstract: A solid-state image pick-up unit comprises: a semiconductor substrate comprising an area in which a photoelectric converting portion is formed; and an electric charge transfer portion that transfers an electric charge formed by the photoelectric converting portion, wherein the electric charge transfer portion comprises: an electric charge transfer electrode including a first layer electrode and a second layer electrode; and a gate oxide film, the gate oxide film comprises a second gate oxide film formed under the second layer electrode, the second gate oxide film comprising an ONO film which comprises a SiO film, a SiN film and a SiO film in this order, and the second gate oxide film is continuously formed to cover whole of a region between the first layer electrode and the second layer electrode and a region under the second layer electrode.