Abstract: An epoxy resin molding material for sealing includes (A) an epoxy resin, (B) a curing agent, (C) a curing accelerator, (D) an inorganic filler, (E1) an arylamino group-containing alkoxysilane compound, and (E2) an epoxy group-containing alkoxy silane compound.

Abstract: An epoxy resin molding material for sealing includes (A) an epoxy resin, (B) a curing agent, (C) a curing accelerator, (D) an inorganic filler, (E1) an arylamino group-containing alkoxysilane compound, and (E2) an epoxy group-containing alkoxy silane compound.

Abstract: An epoxy resin molding material for sealing includes (A) an epoxy resin, (B) a curing agent, (C) a curing accelerator, (D) an inorganic filler, (E1) an arylamino group-containing alkoxysilane compound, and (E2) an epoxy group-containing alkoxy silane compound.

Abstract: An encapsulating epoxy resin molding material comprising (A) an epoxy resin, (B) a curing agent, and (C) a silane coupling agent having a secondary amino group or (D) a phosphate, and semiconductor devices encapsulated therein. The encapsulating epoxy resin molding material for thin semiconductor devices according to this invention is excellent in fluidity, and the semiconductor device encapsulated therein, which is a semiconductor device having a semiconductor chip arranged on a thin, multi-pin, long wire, narrow-pad-pitch, or on a mounted substrate such as organic substrate or organic film, is free of molding defects such as wire sweep, voids etc. as shown in the Examples, and thus its industrial value is significant.

Abstract: The present invention relates to an encapsulated epoxy-resin molding compound, comprising an epoxy resin (A), a hardening agent (B), and magnesium hydroxide (C), wherein the magnesium hydroxide (C) has a [101]/[001] peak intensity ratio of 0.9 or more as determined by X-ray diffraction, a BET specific surface area of 1 to 4 m2/g, and an average particle diameter of 5 ?m or less, and provides an encapsulated epoxy-resin molding compound superior in flame resistance moldability and also in reliability such as reflow resistance, moisture resistance, high-temperature storage stability, and thus, favorable for sealing VLSI, and an electronic component device carrying an element sealed with the molding compound.

Abstract: The present invention relates to an encapsulated epoxy resin composition containing an epoxy resin (A), a hardening agent (B), and magnesium hydroxide (C), the magnesium hydroxide (C) comprising magnesium hydroxide particles with its crystal appearance in a hexagonal column shape having two hexagonal top and bottom base faces in parallel with each other and six peripheral prism faces formed between the base faces and having a length in the c-axis direction of 1.5×10?6 to 6.0×10?6 m, and provides an encapsulated epoxy resin composition favorable as a sealer for VLSI's that is superior in flame resistance and also in reliability such as moldability, reflow resistance, moisture resistance and high temperature storage characteristics and an electronic component device containing an element sealed with the composition.

Abstract: The invention relates to an epoxy resin composition for sealing comprising (A) an epoxy resin, and (B) a curing agent, wherein the following is comprised as the curing agent (B): (C) a compound or compounds represented by the following general formula (I) in which n is or n's are each an integer of 1 to 10, and m is or m's are each an integer of 1 to 10: wherein R1 is selected from a hydrogen atom and substituted or unsubstituted monovalent hydrocarbon groups having 1 to 10 carbon atoms, and R2 is selected from a hydrogen atom and substituted or unsubstituted monovalent hydrocarbon groups having 1 to 10 carbon atoms. This makes it possible to provide a halogen-free and antimony-free epoxy resin composition for sealing which is good in flame retardancy without lowering reliabilities, such as moldability, reflow resistance, humidity resistance and high-temperature-standing property, and an electron component device equipped with an element sealed with this composition.

Abstract: An encapsulating epoxy resin molding material, comprising (A) an epoxy resin, (B) a curing agent, and (C) an inorganic filler, wherein the inorganic filler (C) has an average particle size of 12 ?m or less and a specific surface area of 3.0 m2/g or more.

Abstract: The present invention relates to an encapsulated epoxy-resin molding compound, comprising an epoxy resin (A), a hardening agent (B), and magnesium hydroxide (C), wherein the magnesium hydroxide (C) contains magnesium hydroxide coated with silica, and provides a non-halogenated and non-antimony encapsulated epoxy-resin molding compound superior in flame resistance moldability and also in reliability such as reflow resistance, moisture resistance, high-temperature storage stability, and thus, favorable for sealing VLSI, and an electronic component device carrying an element sealed with the molding compound.

Abstract: 1. An encapsulating epoxy resin molding material, comprising (A) an epoxy resin, (B) a curing agent, and (C) an inorganic filler, wherein the inorganic filler (C) has an average particle size of 12 ?m or less and a specific surface area of 3.0 m2/g or more.

Abstract: An encapsulating epoxy resin molding material comprising (A) an epoxy resin, (B) a curing agent, and (C) a silane coupling agent having a secondary amino group or (D) a phosphate, and semiconductor devices encapsulated therein. The encapsulating epoxy resin molding material for thin semiconductor devices according to this invention is excellent in fluidity, and the semiconductor device encapsulated therein, which is a semiconductor device having a semiconductor chip arranged on a thin, multi-pin, long wire, narrow-pad-pitch, or on a mounted substrate such as organic substrate or organic film, is free of molding defects such as wire sweep, voids etc. as shown in the Examples, and thus its industrial value is significant.

Abstract: There is disclosed an encapsulating epoxy resin composition, containing an epoxy resin (A), a curing agent (B), and a composite metal hydroxide (C), and having a disk flow greater than or equal to 80 mm. The resin composition is preferably applied for encapsulating a semiconductor device having at least one of features including: (a) at least one of an encapsulating material of an upper side of a semiconductor chip and an encapsulating material of a lower side of the semiconductor chip has a thickness less than or equal to 0.7 mm; (b) a pin count is greater than or equal to 80; (c) a wire length is greater than or equal to 2 mm; (d) a pad pitch on the semiconductor chip is less than or equal to 90 ?m; (e) a thickness of a package, in which the semiconductor chip is disposed on a mounting substrate, is less than or equal to 2 mm; and (f) an area of the semiconductor chip is greater than or equal to 25 mm2.

Abstract: There is disclosed an encapsulating epoxy resin composition, containing an epoxy resin (A), a curing agent (B), and a composite metal hydroxide (C), and having a mold release force under shearing after 10 shots of molding which is less than or equal to 200 KPa. The resin composition is preferably applied for encapsulating a semiconductor device having at least one of features including: (a) at least one of an encapsulating material of an upper side of a semiconductor chip and an encapsulating material of a lower side of the semiconductor chip has a thickness less than or equal to 0.7 mm; (b) a pin count is greater than or equal to 80; (c) a wire length is greater than or equal to 2 mm; (d) a pad pitch on the semiconductor chip is less than or equal to 90 (m; (e) a thickness of a package, in which the semiconductor chip is disposed on a mounting substrate, is less than or equal to 2 mm; and (f) an area of the semiconductor chip is greater than or equal to 25 mm2.

Abstract: An encapsulating epoxy resin molding material comprising (A) an epoxy resin, (B) a curing agent, and (C) a silane coupling agent having a secondary amino group or (D) a phosphate, and semiconductor devices encapsulated therein.

Abstract: An adhesive composition for metal-clad laminates which comprises:(a) 100 parts by weight of a polyvinylbutyral having an average polymerization degree of from 500 to 3,000 and a degree of butyralization of at least 60 mol %,(b) from 10 to 200 parts by weight of an epoxidized polybutadiene per 100 parts by weight of the polyvinylbutyral, the epoxidized polybutadiene having a number average molecular weight of from 1,000 to 10,000 and an epoxy equivalent weight of from 200 to 2,000, and(c) from 1 to 10 parts by weight of a hardener for the epoxidized polybutadiene per 100 parts by weight of the epoxidized polybutadiene.