Patents by Inventor Ryoichi Kobayashi

Ryoichi Kobayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4591780
    Abstract: A current source device controls a rate of change of current flowing through a load so that the change rate of the current is equal to a change rate of a fluctuating supply voltage. A first transistor is fed with the supply voltage via a first resistor connected to its collector and a second resistor connected to its emitter. A second transistor has a base connected to a base of the first transistor, an emitter connected to a third resistor and a collector connected to a load. A current to the load is fed from the supply voltage via the load, the collector and emitter of the second transistor and the third resistor. The collector and base of the first transistor are respectively connected to a base and an emitter of a third transistor having a collector fed with the supply voltage.
    Type: Grant
    Filed: December 8, 1983
    Date of Patent: May 27, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Kazuji Yamada, Ryoichi Kobayashi, Yasuo Nagai, Isao Shimizu, Kanji Kawakami
  • Patent number: 4550612
    Abstract: In an integrated pressure sensor, a silicon chip for pressure detection and a substrate for supporting the silicon chip are made of the same material, the silicon chip has a thin diaphragm portion and a peripheral fixed portion thicker than the diaphragm portion, and the silicon chip is bonded to the substrate through a thin insulating film.
    Type: Grant
    Filed: May 31, 1984
    Date of Patent: November 5, 1985
    Assignee: Hitachi, Ltd.
    Inventors: Kazuji Yamada, Shigeyuki Kobori, Satoshi Shimada, Ryosaku Kanzawa, Ryoichi Kobayashi, Hideo Sato
  • Patent number: 4404539
    Abstract: A semiconductor strain gauge is arranged as a bridge having four piezoresistive elements which each include a low impurity concentration diffused portion and a heavily-doped diffused portion. The resistance values of the two low impurity concentration diffused portions opposite each other in the bridge are greater than the resistance values of the other two lower impurity concentration portions. The resistances of the heavily-doped diffused portion are selected so that the resistance of the piezoresistive elements are equal. However, by virtue of the fact that the resistance temperature coefficient of the low impurity portions are greater than the resistance temperature coefficients of the high impurity portions, the overall resistance temperature coefficients of the bridge arms will be different. This permits the zero-point voltage of the bridge to always increase with an increase in temperature.
    Type: Grant
    Filed: February 23, 1981
    Date of Patent: September 13, 1983
    Assignee: Hitachi, Ltd.
    Inventors: Kazuji Yamada, Motohisa Nishihara, Hideo Sato, Seiko Suzuki, Ryoichi Kobayashi