Abstract: A drive unit 120 sets a saturation amount in a read period in which charges generated in pixels are read to vertical CCDs to be lower in a combination mode than in an individual mode (see Vsub in count values 22 to 24 in FIG. 6). As a result, excess charges in the pixels are drained to an n-type substrate 11. The drive unit 120 also sets an accumulation period to be shorter in combination mode than in individual mode (see Vsub in each mode in FIG. 6).

Abstract: A driving method is applied to a solid-state imaging apparatus having photoelectric conversion portions, transfer portion for reading out signal charges, and an excess charge draining portion for draining charges exceeding a saturation charge amount that is set by a reference voltage. One of driving modes is selected from a full pixel mode in which accumulated signal charges are detected individually for each pixel and a pixel mixing mode in which signal charges of a predetermined number of pixels are mixed to be detected. In the full pixel mode, the draining portion is supplied with the reference voltage having the same value during a charge accumulation period and a read transfer period for read transferring charges. In the pixel mixing mode, the draining portion is supplied with the reference voltage having a low level during the charge accumulation period and the reference voltage having a high level during the read transfer period.

Abstract: The present invention provides a solid-state image sensing device that can reduce at least the number of pixels arranged in the horizontal direction and can output high quality picture signals at high speed without generating moire or alias.

Abstract: The present invention provides a solid-state image sensor, a solid-state image sensing apparatus, and a camera realizing a high-speed operation, all operable to output signal charges so as to maintain the light sensitivity and generate high-quality video signals free from moiré and aliased signals even if the number of pixels making up one frame of an image is reduced. The solid-state image sensor comprises a plurality of photoelectric converters, vertical transfer groups, and a horizontal transfer unit disposed at one side of the vertical transfer groups. Each vertical transfer group includes 2n+1 vertical transfer units, where n is an integer of 1 or more. Each vertical transfer unit includes a plurality of transfer electrodes arranged in columns and charge storage units receiving and storing charges from the photoelectric converters. In n out of the 2n+1 vertical transfer units, predetermined transfer electrodes disposed near the horizontal transfer unit are independent transfer electrodes.

Abstract: In a manufacturing method of an image sensor, a lightproof film (an antireflective film for avoiding flares) is formed over a wiring area; a transparent film is formed over an imaging area using a material capable of patterning; a transparent film, for forming micro lenses on top, is formed on the transparent film, wherein a height of the top surfaces of the transparent film and the lightproof film are evenly formed.

Abstract: The present invention provides a semiconductor device that can adjust signal frequency bandwidths and consumption currents to be appropriately increased or reduced in source-follower amplifiers in all stages. The semiconductor device is comprised of a source-follower amplifier including a driver transistor D1, and a load transistor L1 that is connected to the driver transistor D1 and driven variably depending on a signal inputted to the driver transistor, wherein a gate of the load transistor L1 is applied with a variable bias voltage. The semiconductor device 1 is further comprised of a source-follower amplifier including a driver transistor D2, and a load circuit (load transistor L2) that is connected to said second driver transistor and driven variably depending on a signal outputted from the second driver transistor D2, wherein a gate of the load transistor L2 is applied with a variable bias voltage to vary a resistance value of the load transistor L2.

Abstract: A driving method is applied to a solid-state imaging apparatus having photoelectric conversion portions, transfer portion for reading out signal charges, and an excess charge draining portion for draining charges exceeding a saturation charge amount that is set by a reference voltage. One of driving modes is selected from a full pixel mode in which accumulated signal charges are detected individually for each pixel and a pixel mixing mode in which signal charges of a predetermined number of pixels are mixed to be detected. In the full pixel mode, the draining portion is supplied with the reference voltage having the same value during a charge accumulation period and a read transfer period for read transferring charges. In the pixel mixing mode, the draining portion is supplied with the reference voltage having a low level during the charge accumulation period and the reference voltage having a high level during the read transfer period.

Abstract: In a manufacturing method of an image sensor, a lightproof film (an antireflective film for avoiding flares) is formed over a wiring area; a transparent film is formed over an imaging area using a material capable of patterning; a transparent film, for forming micro lenses on top, is formed on the transparent film, wherein a height of the top surfaces of the transparent film and the lightproof film are evenly formed.

Abstract: In a manufacturing method of an image sensor, a lightproof film (an antireflective film for avoiding flares) is formed over a wiring area; a transparent film is formed over an imaging area using a material capable of patterning; a transparent film, for forming micro lense on top, is formed on the transparent film, wherein a height of the top surfaces of the transparent film and the lightproof film are evenly formed.

Abstract: The present invention provides a semiconductor device which enables to control increase of current consumption and decrease of gain at the time of broad bandwidth for frequency. The semiconductor device includes a source-follower amplifier and a first control circuit, and the source-follower amplifier includes plurality of driver transistors D2a and D2b using sources as output, the sources being connected to each other therein, a load transistor L2 connected to plurality of the drive transistors D2a and D2b. The first control circuit (switching transistors S and T) makes plurality of the driver transistors operate selectively depending on frequency bandwidth of a input signal to the source-follower amplifier.

Abstract: The present invention provides a semiconductor device that can adjust signal frequency bandwidths and consumption currents to be appropriately increased or reduced in source-follower amplifiers in all stages. The semiconductor device is comprised of a source-follower amplifier including a driver transistor D1, and a load transistor L1 that is connected to the driver transistor D1 and driven variably depending on a signal inputted to the driver transistor, wherein a gate of the load transistor L1 is applied with a variable bias voltage. The semiconductor device 1 is further comprised of a source-follower amplifier including a driver transistor D2, and a load circuit (load transistor L2) that is connected to said second driver transistor and driven variably depending on a signal outputted from the second driver transistor D2, wherein a gate of the load transistor L2 is applied with a variable bias voltage to vary a resistance value of the load transistor L2.

Abstract: The present invention provides a solid-state image sensor, a solid-state image sensing apparatus, and a camera realizing a high-speed operation, all operable to output signal charges so as to maintain the light sensitivity and generate high-quality video signals free from moiréand aliased signals even if the number of pixels making up one frame of an image is reduced. The solid-state image sensor comprises a plurality of photoelectric converters, vertical transfer groups, and a horizontal transfer unit disposed at one side of the vertical transfer groups. Each vertical transfer group includes 2n+1 vertical transfer units, where n is an integer of 1 or more. Each vertical transfer unit includes a plurality of transfer electrodes arranged in columns and charge storage units receiving and storing charges from the photoelectric converters. In n out of the 2n+1 vertical transfer units, predetermined transfer electrodes disposed near the horizontal transfer unit are independent transfer electrodes.

Abstract: A solid-state image sensor includes photoelectric converters positioned either in a complementary color filter array or in the Bayer color filter array. The solid-state image sensor either adds together electric charges obtained by 9 photoelectric converters that relate to one color in each portion of six rows and six columns of the photoelectric converters so as to output a resulting electric charge as one pixel, or outputs the electric charges obtained by 9 photoelectric converters that relate to one color as 9 pixels without added together. By adding together the electric charges, the resolution of an image becomes one ninth of the case where the electric charges are not added together, and the sensitivity becomes 9 times higher than the same. The control unit not shown in the drawing determines a time length for photoelectric conversion assuming that the electric charges are not added together.

Abstract: A drive unit 120 sets a saturation amount in a read period in which charges generated in pixels are read to vertical CCDs to be lower in a combination mode than in an individual mode (see Vsub in count values 22 to 24 in FIG. 6). As a result, excess charges in the pixels are drained to an n-type substrate 11. The drive unit 120 also sets al accumulation period to be shorter in combination mode than in individual mode (see Vsub in each mode in FIG. 6).

Abstract: According to the manufacturing method of the image sensor of the present invention, the lightproof film4 (the antireflective film for avoiding flares) is formed over the wiring area3; the transparent film10 is formed over the imaging area2 using the material capable of patterning; the transparent film8, for forming micro lenses on top, is formed on the transparent film10; and the top surface of the transparent film10 and the lightproof film4 is evenly formed.

Abstract: The present invention provides a solid-state image sensing device that can reduce at least the number of pixels arranged in the horizontal direction and can output high quality picture signals at high speed without generating moire or alias.