Abstract: A magnetic field measuring device including: a vibrational probe unit having a probe that includes one or more material(s) whose intensity of magnetization is proportionate to an external magnetic field, a mechanical vibration source for the probe; a vibration detector detecting a vibration frequency and amplitude of the probe; an alternating-current magnetic field generator applying to the probe an alternating-current magnetic field; a direct-current external magnetic field generator applying a direct-current external magnetic field to the probe; a frequency modulation detector detecting frequency modulation occurring to the mechanical vibration of the probe; a direct-current external magnetic field controller adjusting the intensity of the direct-current external magnetic field applied to the probe; and a direct-current magnetic field determination unit determining a value of the direct-current magnetic field originating from a specimen.

Abstract: A magnetic field measuring device including: a vibrational probe unit having a probe that includes one or more material(s) whose intensity of magnetization is proportionate to an external magnetic field, a mechanical vibration source for the probe; a vibration detector detecting a vibration frequency and amplitude of the probe; an alternating-current magnetic field generator applying to the probe an alternating-current magnetic field; a direct-current external magnetic field generator applying a direct-current external magnetic field to the probe; a frequency modulation detector detecting frequency modulation occurring to the mechanical vibration of the probe; a direct-current external magnetic field controller adjusting the intensity of the direct-current external magnetic field applied to the probe; and a direct-current magnetic field determination unit determining a value of the direct-current magnetic field originating from a specimen.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Abstract: A plurality of magnetic memories with respective ring-shaped magnetic layers therein are prepared. The magnetic layers have respective notches formed by partially cutting out the peripheries thereof in circular arc shape. The magnetic memories are arranged in plane so that the surfaces of the notches are parallel to one another.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Abstract: A magnetic memory is composed of a ring-shaped magnetic layer that includes a notch having a circular arc shape. The notch is formed by partially cutting out the periphery of the ring-shaped magnetic layer. A ratio h/H1 for the magnetic layer is set to be equal to or greater than 0.01 where “h” is the height of the notch and “H1” is the outer diameter of the magnetic layer.

Abstract: A magnetic memory includes a magnetic substance composed of a disc-shaped first magnetic layer and a ring-shaped second magnetic layer which is formed on the first magnetic layer.

Abstract: A plurality of magnetic memories with respective ring-shaped magnetic layers therein are prepared. The magnetic layers have respective notches formed by partially cutting out the peripheries thereof in circular arc shape. The magnetic memories are arranged in plane so that the surfaces of the notches are parallel to one another.

Abstract: The present application provides a magneto-resistive element excellent in symmetry of playback waveforms. The basic construction of the present application is as follows.

Abstract: A magnetic memory includes a magnetic substance composed of a disc-shaped first magnetic layer and a ring-shaped second magnetic layer which is formed on the first magnetic layer.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Abstract: A magnetic memory is composed of a ring-shaped magnetic layer having a notch formed by partially cutting out the periphery thereof in circular arc shape.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Abstract: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer comprised of an insulating material, a semicondcutor or an antiferromagnetic material against said magnetic layers, and the magnetoresistance effect element has terminals formed with at least on the opposite magnetic layers, respectively, so that a current is sure to be flowed in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Abstract: The present application provides a magneto-resistive element excellent in symmetry of playback waveforms. The basic construction of the present application is as follows.

Abstract: A magnetic sensor is constructed to be capable of detecting the change of tunnel current due to co-tunneling effect at a high S/N ratio by using a tunneling magneto-resistive element having a first magnetic layer of a soft magnetic material formed on a flat substrate, first and second tunnel barrier layers formed on the first magnetic layer, magnetic particles of a ferromagnetic material provided between the first and second tunnel barrier layers, and a second magnetic layer of a soft magnetic material formed on the second tunnel barrier layer so as to create tunneling junctions.

Abstract: A magnetic sensor is constructed to be capable of detecting the change of tunnel current due to co-tunneling effect at a high S/N ratio by using a tunneling magneto-resistive element having a first magnetic layer of a soft magnetic material formed on a flat substrate, first and second tunnel barrier layers formed on the first magnetic layer, magnetic particles of a ferromagnetic material provided between the first and second tunnel barrier layers, and a second magnetic layer of a soft magnetic material formed on the second tunnel barrier layer so as to create tunneling junctions.