Abstract: A semiconductor light emitting device gives a large radiation surface with an enhanced light radiating capability. A N-type GaN layer and a P-type GaN layer are stacked to define therebetween an interface where a light is generated upon application of voltage across the interface. A light guide on which the GaN layers are developed is utilized to give a wide radiation surface from which the light is given off. The radiation surface is formed with a refractor layer composed of an array of a first medium and a second medium which have individual refraction indexes different from each other and are arranged alternately across the radiation surface. Thus, the light guide can be best utilized to give a large radiation surface, yet formed with the refractor layer which reduces multiple reflections inside of the light guide for effectively passing or radiating the light transmitted through the light guide.

Abstract: A semiconductor light emitting device gives a large radiation surface with an enhanced light radiating capability. A N-type GaN layer and a P-type GaN layer are stacked to define therebetween an interface where a light is generated upon application of voltage across the interface. A light guide on which the GaN layers are developed is utilized to give a wide radiation surface from which the light is given off. The radiation surface is formed with a refractor layer composed of an array of a first medium and a second medium which have individual refraction indexes different from each other and are arranged alternately across the radiation surface. Thus, the light guide can be best utilized to give a large radiation surface, yet formed with the refractor layer which reduces multiple reflections inside of the light guide for effectively passing or radiating the light transmitted through the light guide.